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Head phone Amplifiers
Coupling Capacitorless
Headphone Amplifiers
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
●Description
BD88xxxGUL is output coupling capacitorless headphone amplifier. This IC has a negative voltage generator of regulated
type built-in and generat es the direct regulat ed negative voltage from the s upply voltage. It is possible to drive hea dphones
in a ground standard with both voltage of the positive voltage (+2.4V) and the negative voltage (-2.4V). Therefore a
large-capacity output coupling capacitor becomes needless and can reduce a cost, a board area, and the height of the part.
In addition, there is not the signal decrement by the low range to happen by output coupling capacitor and output load
impedance and can output a rich low tone.
●Features
1) 2.4V to 5.5V Single-Supply Operation
2) No Bulky DC-Blocking Capacitors Require d
3) No Degradation of Low-Frequency Response Due to Outpu t Capacitors
4) Ground-Referenced Outputs
5) Gain setting
BD88400GUL: Variable gain with external resistors
BD88410GUL: -1.0V/V
BD88415GUL: -1.5V/V
BD88420GUL: -2.0V/V
6) Low THD+N
7) Low Supply Current
8) Integrated Negative Power Supply
9) Integrated Short-Circuit and Thermal-Overload Protection
10) Small package
VCSP50L2 (2.1mm x 2.1mm)
●Applications
Mobile Phones, Smart Phones, PDAs, Portable Audio Players, PCs, TVs, Digital Cameras, Digital Video Cameras,
Electronic Dictionaries, Voice Recorders, Bluetooth Head-sets, etc
●Line up
Type Supply
Voltage
[V]
Supply
Current
[mA] Gain
[V/V] Maximum
Output Power
[mW] THD+N
[%] Noise
Voltage
[µVrms] PSRR
[dB] Package
BD88400GUL
2.4～5.5 2.0
(No signal)
Variable gain
with external
resister
80
(VDD=3.3V,RL=16Ω
THD+N≦1%,f=1kHz)
0.006
(VDD=3.3V,RL=16Ω
Po=10mW,f=1kHz) 10 -80
(f=217Hz) VCSP50L2
(2.1mm x 2.1mm)
BD88410GUL -1.0
BD88415GUL -1.5
BD88420GUL -2.0
No.11102EAT04
Technical Note
2/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
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●Absolute maximum ratings
Parameter Symbol Ratings Unit
SGND to PGND voltage VGG 0.0 V
SVDD to PVDD voltage VDD -0.3～0.3 V
SVSS to PVSS voltage VSS 0.0 V
SGND or PGND to SVDD, PVDD voltage VDG -0.3～6.0 V
SVSS, PVSS to SGND or PGND voltage VSG -3.5～0.3 V
SGND to IN_- voltage VIN (SVSS-0.3)～2.8 V
SGND to OUT_- voltage VOUT (SVSS-0.3)～2.8 V
PGND to C1P- voltage VC1P (PGND-0.3)～(PVDD+0.3) V
PGND to C1N- voltage VC1N (PVSS-0.3)～(PGND+0.3) V
SGND to SHDN_B- voltage VSH (SGND-0.3)～(SVDD+0.3) V
Input current IIN -10～10 mA
Power Dissipati on PD 1350 * mW
Storage Temperature Range TSTG -55～150 ℃
* In operating over 25 ℃, de-rate the value to 10.8mW/℃. This value is for mounted on the application board
(Grass-epoxy, size: 40mm x 60mm, H=1.6mm, Top Copper area = 79.9%, Bottom Copper area = 80.2%).
●Operating conditions
Parameter Symbol
Ratings Unit
Min. Typ. Max.
Supply Voltage Range VSVDD,VPVDD 2.4 - 5.5 V
Operating Temperature Range TOPR -40 - +85 ℃
Technical Note
3/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Electrical characteristics
Unless otherwise specified, Ta=25℃, SVDD= PVDD=3.3V, SGND=PGND=0V, SHDNB=SVDD, C1=C2=2.2µF,
RL=No Load, Ri=Rf= 10k Ω
Parameter Symbol Limits Unit Conditions
Min. Typ. Max.
Supply Current
Shutdown Supply Current IST - 0.1 2 µA SHDNLB=SHDNRB=L
Quiescent Supply Current IDD1 - 1.3 - mA
(SHDNLB,SHDNRB)=(H,L) or (L,H),
No signal
IDD2 - 2.0 7.4 mA
SHDNLB=SHDNRB=H,
No signal
SHDN_B Terminal
H Level Input Voltage VIH 1.95 - - V
L Level Input Voltage VIL - - 0.70 V
Input Leak Current ILEAK - - ±1 µA
Headphone Amplifier
Shutdown to Full Operation tSON - 80 - µs SHDNLB=SHDNRB=L→H
Offset Voltage VIS - ±0.5 ±5.0 mV
Maximum Output Power POUT 30 60 - mW
RL=32Ω, THD+N≦-40dB, f=1kHz,
20kHz LPF, for Single Chann el
40 80 - mW
RL=16Ω, THD+N≦-40dB, f=1kHz,
20kHz LPF, for Single Chann el
Total Harmonic Distortion
+ Noise THD+N - 0.008 0.056 %
RL=32Ω, POUT=10mW, f=1kHz,
20kHz LPF
- 0.006 0.100 %
RL=16Ω, POUT=10mW, f=1kHz,
20kHz LPF
Input Impedance ZIN 10 14 19 kΩ SHDNLB=SHDNRB=H
In BD88400GUL, ZIN = Ri
Gain
BD88400GUL
AV
- -1.00 -
V/V In BD88400GUL, Gain is variable
by the external resister of Ri and Rf.
BD88410GUL -1.05 -1.00 -0.95
BD88415GUL -1.55 -1.50 -1.45
BD88420GUL -2.06 -2.00 -1.94
Gain match ΔAV - 1 - %
Noise VN - 10 - µVrms 20kHz LPF + JIS-A
Slew Rate SR - 0.15 - V/µs
Maximum Capacitive Load CL - 200 - pF
Crosstalk CT - -90 - dB
RL=32Ω, f=1kHz, VOUT=200mVP-P,
1kHz BPF
Power Supply
Rejection Ratio PSRR - -80 - dB
f=217Hz, 100mVP-P‐ripple,
217Hz BPF
Charge-Pump
Oscillator Frequency fOSC 200 300 430 kHz
Thermal-Shutdown Threshold TSD - 145 - ℃
Thermal-Shutdown Hysteresis THYS - 5 - ℃
Technical Note
4/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Electrical characteristic curves – General Items (Reference data)
Unless otherwise specified, Ta=25℃, SGND=PGND=0V, SHDNLB=SHDNRB=SVDD, C1=C2=2.2µF,
Input coupling capacitor=1µF, RL=No Load * In BD88400GUL the input resister(Ri)=10kΩ, feedback resister(Rf)=10kΩ.
Fig.1 Standby Current vs.
Supply Voltage
0.1n
1n
10n
100n
1u
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Su ppl y Volt age [ V]
Standby Curr ent [A
]
SHDNLB=0V
SHDNRB=0V
Fig.3 Stereo Operating
Current vs. Supply voltage
0.0
1.0
2.0
3.0
4.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Su ppl y Volt age [ V]
Oper ating Current [ m A]
SHDNLB=VDD
SHDNRB=VDD
* This caracteristics has
hysteresis (40mV typ) by
UVLO.
Fig.2 Monaural Operating
Current vs. Supply Voltage
0.0
1.0
2.0
3.0
4.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Supply Vol tage [V]
Oper at ing Curr ent [ m A]
SHDNLB=VDD
SHDNRB=0V
* This caracteristics has
hysteresis (40mV typ) by
UVLO.
Fig.4 Negative Voltage vs.
Supply Voltage
-3
-2.5
-2
-1.5
-1
-0.5
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Su ppl y Volt age [ V]
VSS Voltage [V]
SHDNLB=VDD
SHDNRB=VDD
No Load
Fig.8 PSRR vs. Frequency
(VDD=3.3V)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1k 10k 100k
Frequency [H z]
PSRR [ d B ]
VDD=3.3V
Ripple = 100mVp-p
BPF
Fig.7 PSRR vs. Frequency
(VDD=2.4V)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1k 10k 100k
Frequency [H z]
PSRR [ d B ]
VDD=2.4V
Ripple = 100mVp-p
BPF
Fig.9 PSRR vs. Frequency
(VDD=5.5V)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1k 10k 100k
Frequency [Hz]
PSRR [ d B ]
VDD=5.5V
Ripple = 100mVp-p
BPF
Fig.10 Crosstalk vs.
Frequency (VDD=2.4V)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1k 10k 100k
Frequency [H z]
PSRR [ d B ]
VDD=2.4V
VOUT = 20 0m V p-p
RL=32Ω
BPF
Fig.11 Crosstalk vs.
Frequency (VDD=3.3V)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1k 10k 100k
Frequency [H z]
PSRR [ d B ]
VDD=3.3V
VOUT = 20 0m V p-p
RL=32Ω
BPF
Fig.12 Crosstalk vs.
Frequency (VDD=5.5V)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1k 10k 100k
Frequency [H z]
PSRR [ d B ]
VDD=5.5V
VOUT = 20 0m V p-p
RL=32Ω
BPF
Fig.5 Setup time vs.
Supply Voltage
0
20
40
60
80
100
120
140
160
180
200
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Su ppl y Volt age [ V]
Setup time [us]
SHDNLB=SHDNRB
=L->H
VSS 90% Setup ti me
No Load
Fig.6 Maximum power vs.
Supply Voltage
0
20
40
60
80
100
120
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Su ppl y Volt age [ V]
Maximum Output Power [mW]
THD+N≦-40dB
20kHz LPF
Stereo
RL=16Ω, i n phas e
RL=16Ω, out of phas e
RL=32Ω, out of phase
RL=32Ω, i n phas e
Technical Note
5/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Electrical characteristic curves – BD88 415GUL (Referen ce data)
Fig.13 Output Voltage vs.
Input Voltage (VDD=2.4V)
-120
-100
-80
-60
-40
-20
0
-120 -100 -80 -60 -40 -20 0
Input Volt age [ dBV]
Output Voltage [dBV]
VDD=2.4V
f=1kHz
BPF
RL=32Ω
RL=16Ω
Fig.14 Output Voltage vs.
Input Voltage (VDD=3.3V)
-120
-100
-80
-60
-40
-20
0
-120 -100 -80 -60 -40 -20 0
In put Volt age [ dBV]
Output Voltage [dBV]
VDD=3.3V
f=1kHz
BPF
RL=32Ω
RL=16Ω
Fig.15 Output Voltage vs.
Input Voltage (VDD=5.5V)
-120
-100
-80
-60
-40
-20
0
-120 -100 -80 -60 -40 -20 0
Input Volt age [ dBV]
Output Voltage [dBV]
VDD=5.5V
f=1kHz
BPF
RL=32Ω
RL=16Ω
Fig.16 Gain vs. Frequenc y
(VDD=2.4V)
-10
-8
-6
-4
-2
0
2
4
6
8
10
10 100 1k 10k 100k
Frequency [H z]
Gain [dB]
VDD=2.4V
Po=10mW
RL=16Ω
Input coupling
ca p acitor = 1. 0uF
RL=32Ω
RL=16Ω
Fig.17 Gain vs. Frequenc y
(VDD=3.3V)
-10
-8
-6
-4
-2
0
2
4
6
8
10
10 100 1k 10k 100k
Frequency [H z]
Gain [dB]
VDD=3.3V
Po=10mW
RL=16Ω
Input coupling
ca p acitor = 1. 0uF
RL=32Ω
RL=16Ω
Fig.18 Gain vs. Frequenc y
(VDD=5.5V)
-10
-8
-6
-4
-2
0
2
4
6
8
10
10 100 1k 10k 100k
Frequency [H z]
Gain [dB]
VDD=5.5V
Po=10mW
RL=16Ω
Input coupling
ca p acitor = 1. 0uF
RL=32Ω
RL=16Ω
Fig.19 THD+N vs. Output
Power (VDD=2.4V, RL=16Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=2.4V
20kHz-LPF
f=1kHz
Stereo
RL=16Ω
In phase
Out of phase
Fig.20 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16Ω
In phase
Out of phase
Fig.21 THD+N vs. Output
Power (VDD=5.5V, RL=16Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=5.5V
20kHz-LPF
f=1kHz
Stereo
RL=16Ω
In phase
Out of phase
Fig.22 THD+N vs. Output
Power (VDD=2.4V, RL=32Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=2.4V
20kHz-LPF
f=1kHz
Stereo
RL=32Ω
In phase
Out of phase
Fig.23 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32Ω
In phase
Out of phase
Fig.24 THD+N vs. Output
Power (VDD=5.5V, RL=32Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=5.5V
20kHz-LPF
f=1kHz
Stereo
RL=32Ω
In phase
Out of phase
Technical Note
6/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Electrical characteristic curves – BD88415GUL (Referen ce d ata) – Continued
Fig.31 Noise Spectrum
(VDD=2.4V)
-140
-120
-100
-80
-60
-40
-20
0
10 100 1k 10k 100k
Frequency [H z]
Spectrum [dBV]
VDD=2.4V
In put conn ect
to the ground
with 1uF
Fig.32 Noise Spectrum
(VDD=3.3V)
-140
-120
-100
-80
-60
-40
-20
0
10 100 1k 10k 100k
Frequency [H z]
Spectr um [ dBV]
VDD=3.3V
In put conn ect
to the ground
with 1uF
Fig.33 Noise Spectrum
(VDD=5.5V)
-140
-120
-100
-80
-60
-40
-20
0
10 100 1k 10k 100k
Frequency [H z]
Spectr um [ dBV]
VDD=5.5V
In put conn ect
t o the grou nd
with 1uF
Fig.25 THD+N vs. Frequency
(VDD=2.4V, RL=16Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=2.4V
RL=16Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW Po=0.1mW
Fig. 26 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW Po=0.1mW
Fig. 27 THD+N vs. Frequency
(VDD=5.5V, RL=16Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=5.5V
RL=16Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW Po=0.1mW
Fig. 28 THD+N vs. Frequency
(VDD=2.4V, RL=32Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=2.4V
RL=32Ω
20kHz-LPF
Stereo (in phase)
Po=1mW
Po=10mW Po=0.1mW
Fig. 29 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
Po=1mW
Po=10mW Po=0.1mW
Fig. 30 THD+N vs. Frequency
(VDD=5.5V, RL=32Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=5.5V
RL=32Ω
20kHz-LPF
Stereo (in phase)
Po=1mW
Po=10mW Po=0.1mW
Technical Note
7/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Electrical characteristic curves – BD88 400GUL (Referen ce data)
Fig.34 Output Voltage vs.
Input Voltage (VDD=3.3V)
-120
-100
-80
-60
-40
-20
0
-120 -100 -80 -60 -40 -20 0
Input Volt age [ dBV]
Output Voltage [dBV]
VDD=3.3V
f=1kHz
BPF
RL=32Ω
RL=16Ω
Fig.40 Noise Spectrum
(VDD=3.3V)
-140
-120
-100
-80
-60
-40
-20
0
10 100 1k 10k 100k
Frequency [H z]
Spectrum [dBV]
VDD=3.3V
In put conn ect
to the ground
with 1uF
Fig.35 Gain vs. Frequenc y
(VDD=3.3V)
-10
-8
-6
-4
-2
0
2
4
6
8
10
10 100 1k 10k 100k
Frequency [H z]
Gain [dB]
VDD=3.3V, Po= 10mW
Ri=10kΩ, Input coupling
ca p acitor = 1. 0uF
RL=32Ω
RL=16Ω
Fig.36 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16ΩOut of phase
In phase
Fig. 37 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32ΩOut of phase
In phase
Fig.38 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [ Hz]
THD+N [%]
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW Po=0.1mW
Fig. 39 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW Po=0.1mW
Technical Note
8/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Electrical characteristic curves – BD88 410GUL (Referen ce data)
Fig.41 Output Voltage vs.
Input Voltage (VDD=3.3V)
-120
-100
-80
-60
-40
-20
0
-120 -100 -80 -60 -40 -20 0
Input Volt age [ dBV]
Output Voltage [dBV]
VDD=3.3V
f=1kHz
BPF
RL=32Ω
RL=16Ω
Fig.42 Gain vs. Frequenc y
(VDD=3.3V)
-10
-8
-6
-4
-2
0
2
4
6
8
10
10 100 1k 10k 100k
Frequency [H z]
Gain [dB]
VDD=3.3V
Po=10mW
Input coupling
ca p acitor = 1. 0uF
RL=32Ω
RL=16Ω
Fig.47 Noise Spectrum
(VDD=3.3V)
-140
-120
-100
-80
-60
-40
-20
0
10 100 1k 10k 100k
Frequency [H z]
Spectrum [dBV]
VDD=3.3V
In put conn ect
to the ground
with 1uF
Fig.43 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16ΩOut of phase
In phase
Fig. 44 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32ΩOut of phase
In phase
Fig.45 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [ Hz]
THD+N [%]
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW
Po=0.1mW
Fig. 46 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW Po=0.1mW
Technical Note
9/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
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●Electrical characteristic curves – BD88 420GUL (Referen ce data)
Fig.48 Output Voltage vs.
Input Voltage (VDD=3.3V)
-120
-100
-80
-60
-40
-20
0
-120 -100 -80 -60 -40 -20 0
Input Volt age [ dBV]
Out put Voltage [dBV]
VDD=3.3V
f=1kHz
BPF
RL=32Ω
RL=16Ω
Fig.49 Gain vs. Frequenc y
(VDD=3.3V)
-10
-8
-6
-4
-2
0
2
4
6
8
10
10 100 1k 10k 100k
Frequency [H z]
Gain [dB]
VDD=3.3V
Po=10mW
Input coupling
ca p acitor = 1. 0uF
RL=32Ω
RL=16Ω
Fig.54 Noise Spectrum
(VDD=3.3V)
-140
-120
-100
-80
-60
-40
-20
0
10 100 1k 10k 100k
Frequency [H z]
Spectrum [dBV]
VDD=3.3V
In put conn ect
to the ground
with 1uF
Fig.50 THD+N vs. Output
Power (VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=16ΩOut of phase
In phase
Fig. 51 THD+N vs. Output
Power (VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
1n 100n 10u 1m 100m
Output Power [W]
THD+N [%]
VDD=3.3V
20kHz-LPF
f=1kHz
Stereo
RL=32ΩOut of phase
In phase
Fig.52 THD+N vs. Frequency
(VDD=3.3V, RL=16Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequency [ Hz]
THD+N [%]
VDD=3.3V
RL=16Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW
Po=0.1mW
Fig. 53 THD+N vs. Frequency
(VDD=3.3V, RL=32Ω)
0.001
0.01
0.1
1
10
100
10 100 1k 10k 100k
Frequen c y [Hz]
THD+N [%]
VDD=3.3V
RL=32Ω
20kHz-LPF
Stereo (in phase)
Po=10mW
Po=1mW Po=0.1mW
Technical Note
10/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
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●Pin Arrangeme nt
1 2 3 4
D SVDD OUTL SVSS PVSS
C INL OUTR C1N
B SHDNRB SHDNLB PGND
A INR SGND PVDD C1P
(Bottom View)
●Pin Function
Ball
Matrix Pin name Function Symbol
A1 INR Headphone Amplifier (Rch) i nput C
A2 SGND Ground for Headphone Amplifier -
A3 PVDD Positive Power Supply for Charge Pump -
A4 C1P Flying Capacitor (CF) Positive A
B1 SHDNRB Headphone Amplifier (Rch) Shutdown Control (H:active, L:shutdown) E
B2 SHDNLB Headphone A m plifier (Lch) Shutdown Control (H:active, L:shutdown) E
B4 PGND Ground for Charge Pump -
C1 INL Headphone Am plifier (Lch) input C
C2 OUTR Headphone Am plifier (Rch) output D
C4 C1N Flying Capacitor (CF) Negative B
D1 SVDD Ground for Headphone Amplifier -
D2 OUTL Headphone Amplifier (Lch) output D
D3 SVSS Negative Supply Voltage for Signal -
D4 PVSS Negative Supply Voltage output F
●Pin equivalent circuit
A
　　　　　
PAD
PVDD PVDD
PGND PGND
C
PAD
-
+
SVDD
SVSS
D
PAD
-
+
SVSS
SVDD
　　　
　　
E
　　　　
　
PAD
SVDD
SGND
B
　　　　　
PAD
PVSS PVSS
PGND PGND
　　　　　
Fig.55 Pin equivalent circuit
F
PAD
PGND
　　　　　
PGND
Technical Note
11/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
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●Block Diagram
Type Rin Rfb
BD88400GUL 14kΩ@Typ. Open
BD88410GUL 14kΩ@Typ. 14kΩ@Typ.
BD88415GUL 14kΩ@Typ. 21kΩ@Typ.
BD88420GUL 14kΩ@Typ. 28kΩ@Typ.
Fig.56 Block Diagram
D2
+
-
SVDD
SVSS
+
-
SVDD
SVSS
SHORT
PROTECTION
TSD
SGND
SGND
UVLO/
SHUTDOWN
CONTROL
C2
Rin Rfb
RfbRin
C1
A1
B2B1
D1
CHARGE
PUMP
CLOCK
GENERATOR
SVDD
SVDD
SVDD
D3
SVDD
SVSS
A3
A4
B4
C4
D4
SGND
A2
PVDD
C1P
PGND
C1N
PVSS
INR INL
SHDNLB
SHDNRB
SGND
SVDD
OUTL
OUTR
SVSS
CHARGE
PUMP
CONTROL
PVDD
Technical Note
12/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
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●Functional descriptions
The conventional headphone amplifi er composition is occupied to Fig.57 . In this composition, the signal is output by using
the middle point bias circuit based on the middle point bias. Therefore, the output coupling capacitor that removes the DC
voltage difference and does the AC coupling is necessary. This coupling capacitor and the impedance of the headphone
composes the high-pass filter. Therefore, the signal degradation in the low frequency region learns by experience. The
output coupling capacitor should be a large capacity, because the cutoff frequency of this high-pass filter becomes the
following formula (1).
CL
cCR2 1
fπ
(1)
* Cc is the coupling capacitor, and RL is the impedance of the headphone.
Moreover, POP noise by the middle point bias start-up is generated and the degradation of PSRR learns by experience.
+
-
VDD
GND
+
Vout
Input
time [s]
Vout [V]
VDD/2
Middl e Point
Bias Circuit
VDD
0
Vhp
0
Vhp [V]
time [s]
Cc
Fig.57 Conventional headphone amplifier composition
The composition of the series of BD884xxGUL is occupied to Fig.58. In this composition, the signal is output by using a
negative voltage based on the ground lev el. Therefore, the amplifier output can be con nected directly with the headphone.
And, the output coupling capacitor becomes unnecessary. Additionally, the signal degradation in the low frequency region
with the coupling capacitor is not generated, and the deep bass is achieved.
Moreover, POP noise is controlled because of no middle point bias start-up. And, the degradation of PSRR doesn't occur by
being based on the ground.
+
-
HPVDD
Vout
Input
time [s]
Vout [V]
VDD
Charge
Pump VSS
0
CF : Flying
Capacitor
CH : Hold
Capacitor
Vhp
0
Vhp [V]
time [s]
HPVDD
Fig.58 Composition of the series of BD884xxGUL
Technical Note
13/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
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[CHARGE PUMP / CHARGE PUMP CONTROL]
The negative power supply circuit is composed of the regulated charge-pump. This circuit outputs the regulated negative
voltage (PVSS) directly from power-supply voltage (PVDD). Therefore, it doesn't depend on the po wer-s upply voltage, and
a constant voltage is output (PVSS=-2.4V@Typ., refer to Fig.4). Moreover, there is not swinging of the power supply by the
output current of the headphone amplifier, and it doesn't influenc e the headphone amplifier characteristic.
Fig.59 Characteristics of load current regulation of PVSS (Reference data)
・Power control
The power control is a logical sum of SHDNLB and SHDNRB. The negative power supply circuit starts when H level is
input to either of SHDNLB or SHDNRB, and power is downed at the SHD NLB= S HDNRB=L level.
Table.1 Control of the charge pump
SHDNLB SHDNRB Control
L L Power down
L H Power on
H L Power on
H H Power on
・Operating Frequency
The operating frequency of the negative power supply charge pump is designed for the temperature and the voltage
dependence may decrease. T he reference data (measurem ents) is occupied to Fig.60. Please note the interfere nce with
the frequency in the applicatio n board.
Fig.60 Temperature characteristic and Voltage characteristic of operating frequency (Refer ence data)
・The flying capacitor and the hold capacitor
The flying capacitor (CF) and the hold capacitor (CH) gre atly influence the characteristic of the charg e pump. Therefore,
please connect the capacitor with an excellent temperature char acteristic and voltage characteristic of 2.2µF as much as
possible near IC.
-3
-2.5
-2
-1.5
-1
-0.5
0
0 20406080
Load Cur r en t [ mA]
VSS Vo ltage [V]
Ta=25℃
VDD=3.3V
SHDN_B=SVDD
CF=CH=2.2uF
200
220
240
260
280
300
320
340
360
380
400
2.0 3.0 4.0 5.0 6.0
Supply V ol tage[V]
Charge Pump Ocsillator Frequency [kHz
]
Ta=25℃
Measure : C1P
CF=CH=2.2uF
200
220
240
260
280
300
320
340
360
380
400
-50.0 0.0 50.0 100.0
Ta [℃]
Charge Pump Ocsillator Frequency [kHz
]
VDD=3.3V
Measure : C1P
CF=CH=2.2uF
Technical Note
14/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
[HEADPHONE AMP]
The headphone amplifier is driven by the internal positive voltage (+2.4V) and negative voltage (SVSS, -2.4V) based on
ground (SGND). Therefore, the headphone can be connected without the output coupling capacitor. As a result, it brings the
improved low-frequenc y characteristic compared with the headphone of the conventional coupling capacitor type.
・Power control
L channel and R channel of the headphone amplifier can be independently controlled by SHDNLB and SHDNRB logic.
When the SVSS voltage is -1.1V@Typ. or more, the headphone amplifier does not operate to protect from illegal operation.
And in addition, the overcurrent protection circuit is built in. The amplifier is shutdown when the overcurrent occurs
because of the output short-circuit etc., and IC is protected from being destro yed.
Table.2 Control of the headphone amplifier
SHDNLB SHDNRB L channel R channel
L L Power d own Power d own
L H Power d own Power o n
H L Power o n Power down
H H Power on Power on
VDD
0
[V]
[time]
SHDNxB
0
[V]
[time]
SVSS
-1.1V
Amplifier
Enable
Amprilier
Disable
Fig.61 Area of headphone amplifier can operate
SVSS does not have internal connection with PVSS. Please connect SVSS with PVSS on the application board.
・Input coupling capacitor
Input DC level of BD884xxGUL is 0V (SGND). The input coupling capacitor is necessary for the connection with the
signal source device. The signal decrease happens in the low frequency because of composing the high-pass filter by
this input coupling capacitor and the input impedance of BD 884xxGUL.
The input impedance of BD884xxGUL is Rin (14kΩ@Typ.). The cutoff frequency of this high-pass filter becomes the
following formula. (In BD88400GUL, Rin becomes external resistance Ri. )
inin
cCRπ21
f (2)
* Cin is the input coupling capacitor.
Fig.62 Frequency respons e by the input coupling capacitor (Reference data)
-21.0
-18.0
-15.0
-12.0
-9.0
-6.0
-3.0
0.0
3.0
6.0
9.0
1 10 100
Frequency [H z]
Gain [dB]
Rin=14kΩ
Cin=1uF
Cin=2.2uF
Cin=4.7uF
Cin=10uF
Technical Note
15/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
And, the degradation of THD+N happens bec ause of the input coupling capacitor. Therefore, please co nsider these about
the selection of parts.
* Capacitor size: 1608
Fig.63 THD+N by the input coupling capacitor (Reference data)
・State of terminal when power down
The state of the terminal changes by the power control of the headphone amplifier. When it is shutdown, the input
impedance of the input terminal becom es 7.1kΩ@Typ. (In BD88400GUL, become Ri + 7.1k Ω). The time constant can be
reduced when the input coup ling capacitor is charged.
The input voltage changes while charging up the input coupling capacitor. Therefore, do not operate the headphone
amplifier while charging.
Audio
Source
+
-
VDD
Vout
time [s]
Vs [V]
Output
Bias
0
VSS
Vs Vin
time [s]
Vin [V]
Output
Bias
0
Cin
Rin =7.1kΩ
Fig.64 Input voltage transition with input coupling capacitor
This charge time constant becomes the following formula (3) by using the input coupling capacitor and the input
impedance. And the calculation value of the convergence to the wait time is indicated in Fig.65.
ininCRτ (3)
* Rin=7.1kΩ@Typ.. In BD88400GUL, Rin=Ri+7.1kΩ
Fig.65 Wait time and converg ence (Reference)
0
10
20
30
40
50
60
70
80
90
100
0τ 1τ 2τ 3τ 4τ 5τ 6τ 7τ 8τ
Wait time [s]
Convergence [% ]
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1k 10k 100k
Frequency [H z]
THD+N [ d B ]
BD88415GUL
VDD=3.3V
Po=10mW
RL=16Ω
20kHz LPF
Cin=0.22uF
Cin=0.47uF
Cin=1.0uF
Cin=2.2uF
Technical Note
16/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
[UVLO / SHUTDOWN CONTROL]
BD884xxGUL has lo w voltage protection function (UVLO: Under Voltage Lock Out). And protect from the illegal operation of
IC by a low power supply voltage.
The detection voltage is 2.13V@Typ., so it does not influence 2.4V of recommended operation voltage. UVLO controls the
whole of IC, and does both the negative power supply charge pump and the headphone amplifier in power down.
[TSD]
BD884xxGUL has overheating protection function (TSD: Thermal Shutdown). And the headphone amplifier becomes
shutdown when illegally overheati ng by the headphone amplifier illegally operation.
●Timming Chart
(Usually Operation)
PVDD,SVDD
SHDNLB
SHDNRB
PVSS,SVSS
INL,INR
OUTL
OUTR
Shutdown Setup Signal output Shutdown
Amp enable
Fig.66 Usually Operatio n
(UVLO Operation)
PVDD,SVDD
SHDNLB,
SHDNRB
PVSS,SVSS
OUTL
OUTR
SetupSignal output Signal outputUVLO
Fig.67 UVLO Operation
(TSD Operation)
PVDD,SVDD
SHDNLB,
SHDNRB
PVSS,SVSS
OUTL
OUTR
Signal output Signal outputTSD
Ta Hysteresis = 5℃
Fig.68 TSD Operation
Technical Note
17/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
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© 2011 ROHM Co., Ltd. All rights reserved.
●Application Circuit
Fig.69 BD88410GU/BD88415GUL/BD 88420GUL application circuit
Fig.70 BD88400GUL application circuit
In BD88400GUL, the Pass Gain becomes the following formula (4). The Pass Gain and the resister Rf is limited by table.3.
i
f
R
R
Gain (4)
Table.3 Pass Gain and Resister Limit
Item Min. Typ. Max. Unit
Pass Gain 0.5 1.0 2.0 V/V
Rf 1.0 10 - kΩ
Ri - 10 - kΩ
Ri is not limited. But, if this resister Ri is very small, the signal decrease happe ns in the low frequency (Refer to formula 2).
Part Function value Remarks
CF Flying
Capacitor 2.2µF Temp. Characteristic：
Class-B
CH Hold
Capacitor 2.2µF Temp. Characteristic：
Class-B
Cpvdd Bypass
Capacitor 1.0µF Temp. Characteristic：
Class-B
Csvdd Bypass
Capacitor 1.0µF Temp. Characteristic：
Class-B
Cil Coupling
Capacitor 1.0µF Temp. Characteristic：
Class-B
Cir Coupling
Capacitor 1.0µF Temp. Characteristic：
Class-B
Part Function value Remarks
CF Flying
Capacitor 2.2µF Temp. Characteristic：
Class-B
CH Hold
Capacitor 2.2µF Temp. Characteristic：
Class-B
Cpvdd Bypass
Capacitor 1.0µF Temp. Characteristic：
Class-B
Csvdd Bypass
Capacitor 1.0µF Temp. Characteristic：
Class-B
Cil Coupling
Capacitor 1.0µF Temp. Characteristic：
Class-B
Cir Coupling
Capacitor 1.0µF Temp. Characteristic：
Class-B
Ri Input
Resistor 10kΩ MCR006YZPJ103
(ROHM)
Rf Feedback
Resistor 10kΩ MCR006YZPJ103
(ROHM)
D2
+
-
SVDD
SVSS
+
-
SVDD
SVSS
SHORT
PROTECTION
TSD
SGND
SGND
UVLO/
SHUTDOWN
CONTROL
C2
Rin Rfb
Rfb
Rin
C1
A1
B2B1
D1
CHARGE
PUMP
CLOCK
GENERATOR
SVDD
SVDD
SVDD
D3
SVDD
SVSS
A3
A4
B4
C4
D4
SGND
A2
PVDD
C1P
PGND
C1N
PVSS
SVDD
OUTL
OUTR
SVSS
CHARGE
PUMP
CONTROL
PVDD
3.3V
1.0μF
2.2μF
2.2μF
1.0μF
Rch Input
3.3V
1.0μF
SHUTDOWN
Control
1.0μF
Lch Input
CF
CH
Cpvdd
Csvdd
Cil
Cir
INR INL
SHDNLB
SHDNRB
SGND
Technical Note
18/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Thermal Derating Curve
The reference value of the thermal derating curve is indicated in Fig.7 1.
(Conditions)
This value is for mounted on the ROHM application board
Board size：40mm x 60mm x 1.6mm
Top Copper Area：79.9%
Bottom Copper Area：80.2%
Board Layout：Fig.74
Fig.71 Thermal Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150
Ta [℃]
Pd [W]
Technical Note
19/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Notes for use
(1) Absolute Maximum Ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down devices, thus making impossible to ide ntify breaking mode such as a short circuit or an open circuit. If
any special mode exceeding the absolute maximum ratings is assumed, consid eration should b e given to take physical
safety measures including the use of fuses, etc.
(2) Operating conditions
These conditions represent a range within which characteristics can be provided approximately as expected. The
electrical characteristics are guara nteed under the conditions of each parameter.
(3) Reverse connection of power supply connector
The reverse connection of power supply connector can break down ICs. Take protective measures against the
breakdown due to the revers e connection, such as mounting a n external diode bet ween the power supply and the IC ’s
power supply terminal.
(4) Power supply line
Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this
regard, for the digital block power supply and the analog block power supply, even though these power supplies has
the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus
suppressing the diffraction of digital noises to the analog block po wer supply resultin g from impedance common to the
wiring patterns. For the GND line, give consideration to design the patterns in a similar manner.
Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal.
At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the
capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus
determining the constant.
(5) GND voltage
Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state.
Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric
transient.
(6) Short circuit between terminals and erroneous mountin g
In order to mount ICs on a s et PCB, pay thorough atte ntion to the direction and offset of the ICs. Erroneous mounting
can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or
between the terminal and the power supply or the GND terminal, the ICs can break down.
(7) Operation in strong electromagnetic field
Be noted that using ICs in the strong electromagnetic field can malfunction them.
(8) Inspection with set PCB
On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress.
Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set
PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to
the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In
addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention
to the transportation and the storage of the set PCB.
(9) Input terminals
In terms of the construction of IC, parasitic elements are inevitably formed in re lation to potential. The operati on of the
parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of
the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input
terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not
apply a voltage to the inp ut terminals when no power supp ly voltage is applied to the IC. In ad dition, even if the power
supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the
guaranteed value of electrical characteristics.
(10) Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a l arge current will cause no fluctuations in voltages of
the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
(11) External capacitor
In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a
degradation in the nomi nal capacitance due to DC bias and changes in the capacitance due to temperature, etc.
(12) About the rush current
For ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal
powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring,
width of GND wiring, and routing of wiring.
Technical Note
20/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
●Ordering part number
B D 8 8 4 1 5 G U L - E 2
Part No. Part No.
BD88400
BD88410
BD88415
BD88420
Package
GUL: VCSP50L2 Packaging and formingspecification
E2: Embossed tape and reel
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
VCSP50L2
(BD88400GUL)
2.10±0.05
1PIN MARK
2.10±0.05
0.55MAX
0.1±0.05
S
0.06 S
3
0.30±0.05
2
(φ0.15)INDEX POST
4
C
1
0.30±0.05
B
A
P=0.5×3
P=0.5×3
D
14-φ0.25±0.05
A
B
BA
0.05
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
VCSP50L2
(BD88410GUL)
2.10±0.05
1PIN MARK
2.10±0.05
0.55MAX
0.1±0.05
S
0.06 S
3
0.30±0.05
2
(φ0.15)INDEX POST
4
C
1
0.30±0.05
B
A
P=0.5×3
P=0.5×3
D
14-φ0.25±0.05
A
B
BA
0.05
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
VCSP50L2
(BD88415GUL)
2.10±0.05
1PIN MARK
2.10±0.05
0.55MAX
0.1±0.05
S
0.06 S
3
0.30±0.05
2
(φ0.15)INDEX POST
4
C
1
0.30±0.05
B
A
P=0.5×3
P=0.5×3
D
14-φ0.25±0.05
A
B
BA
0.05
Technical Note
21/21
BD88400GUL,BD88410GUL,BD88415GUL,BD88420GUL
www.rohm.com 2011.03 – Rev. A
© 2011 ROHM Co., Ltd. All rights reserved.
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
VCSP50L2
(BD88420GUL)
2.10±0.05
1PIN MARK
2.10±0.05
0.55MAX
0.1±0.05
S
0.06 S
3
0.30±0.05
2
(φ0.15)INDEX POST
4
C
1
0.30±0.05
B
A
P=0.5×3
P=0.5×3
D
14-φ0.25±0.05
A
B
BA
0.05
R1120A
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
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