PRELIMINARY
1N6818
(MSASC75H45F)
1N6818R
(MSASC75H45FR)
45 Volts
75 Amps
Features
• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6818) and reverse
polarity (strap is cathode: 1N6818R)
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 45 Volts
Working Peak Reverse Voltage VRWM 45 Volts
DC Blocking Voltage VR45 Volts
Average Rectified Forward Current, Tc≤ 125°CIF(ave)75 Amps
derating, forward current, Tc≥ 125°CdIF/dT 4Amps/°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 500 Amps
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz IRRM 2Amp
Junction Temperature Range Tj-55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Thermal Resistance, Junction to Case: 1N6818
1N6818R θJC 0.50
0.65 °C/W
Maximum Ratings @ 25°C (unless otherwise specified)
Mechanical Outline
ThinKey™4
Datasheet# MSC1029A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW VOLTAGE
DROP SCHOTTKY
DIODE
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Reverse (Leakage) IR25 VR= 45 Vdc, Tc= 25°C0.75 7.5 mA
IR125-1 VR= 12 Vdc, Tc= 125°C65 -mA
Current IR125-2 VR= 36 Vdc, Tc= 125°C125 -mA
IR125 VR= 45 Vdc, Tc= 125°C175 300 mA
Forward Voltage VF1 IF= 2 A, Tc= 25°C290 -mV
pulse test, VF2 IF= 10 A, Tc= 25°C350 400 mV
pw= 300 µsVF3 IF= 25 A, Tc= 25°C415 480 mV
d/c≤ 2% VF4 IF= 50 A, Tc= 25°C500 -mV
VF5 IF= 75 A, Tc= 25°C575 650 mV
VF6 IF= 100 A, Tc= 25°C650 -mV
VF7 IF= 2 A, Tc= -55°C390 -mV
VF8 IF= 10 A, Tc= -55°C440 500 MV
VF9 IF= 25 A, Tc= -55°C480 550 MV
VF10 IF= 50 A, Tc= -55°C535 -MV
VF11 IF= 75 A, Tc= -55°C580 660 mV
VF12 IF= 2 A, Tc= 125°C165 -MV
VF13 IF= 10 A, Tc= 125°C250 310 MV
VF14 IF= 25 A, Tc= 125°C350 420 MV
VF15 IF= 50 A, Tc= 125°C475 -MV
VF16 IF= 75 A, Tc= 125°C565 650 mV
VFa IF= 100 mA, Tc= 25°C200 -mV
VFb IF= 100 mA, Tc= 125°C60 -mV
VFc IF= 100 mA, Tc= -55°C325 -mV
Junction Capacitance Cj1 VR= 10 Vdc 1850 -pF
Cj2 VR= 5 Vdc 2500 3000 pF
Breakdown Voltage BVR IR= 5 mA, Tc= 25°C58 V
IR= 5 mA, Tc= -55°C45 50 V
Electrical Parameters
1N6818 (MSASC75H45F)
1N6818R (MSASC75H45FR)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1 10 100 1000
IF(A)
VF(V)
-55C
+25C
+125C
