Data Sheet Switching Diode UMN20N lDimensions (Unit : mm) lApplications General switching lLand size figure (Unit : mm) 0.65 lFeatures 1)Small mold type. (UMD6) 2)Low leakage (5) 0.150.05 (4) 2.10.1 1.250.1 0.9 (6) 0.65 1.6 2.00.2 0.25 0.1 Each lead has same dimension 0.05 0.35 (1) (2) 0.65 lConstruction Silicon epitaxial planer 0.1Min 00.1 (3) 0.65 lStructure 0.7 1.30.1 UMD6 0.90.1 ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (repetitive peak) Average rectified forward current Io Isurge Surge current (t=1sec) Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Limits 40 35 225 100 400 150 Unit V V mA mA mA C C -55 to +150 Min. Typ. Max. Unit Conditions - - 1.2 V IF=100mA Reverse current IR - - 0.01 A Capacitance between terminals Ct - - 5.0 pF VR=20V VR=0.5V , f=1.0MHz www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A Data Sheet UMN20N 100 1 Tj=150C FORWARD CURRENT:IF(A) Tj=125C 0.01 10 REVERSE CURRENT:IR(nA) Tj=150C 0.1 Tj=75C 0.001 Tj=125C 1 Tj=75C 0.1 Tj=25C 0.01 Tj=25C 0.0001 0 0.5 1 0.001 1.5 FORWARD VOLTAGEVF(V) VF-IF CHARACTERISTICS 5 10 15 20 25 30 35 40 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 4 980 f=1MHz Tj=25C IF=100mA n=50pcs 975 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 3 2 1 970 965 960 AVE.:950mV 955 950 945 940 935 0 0 10 20 930 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 5 Tj=25C VR=20V n=30pcs 40 30 20 10 AVE.:4.3pA CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(pA) 50 Ta=25C f=1MHz VR=0.5V n=30pcs 4 3 2 1 AVE.:2.16pF 0 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A Data Sheet UMN20N 10 0.45 8 8.3ms 7 6 5 Tj=25C IF=0.1A IR=0.1A Irr=0.1xIR n=10pcs 1cyc IFSM REVERSE RECOVERY TIME:trr(us) PEAK SURGE FORWARD CURRENT:IFSM(A) 9 AVE.:4.0A 4 3 2 0.4 AVE:0.391us 0.35 1 0 0.3 trr DISPERSION MAP IFSM DISPERSION MAP 5 6 IFSM 4 5 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 4.5 1cyc. 3.5 3 2.5 2 1.5 1 IFSM time 4 3 2 1 0.5 0 1 10 0 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 7 Rth(j-a) AVE:5.83kV 5 4 3 AVE:2.30kV 2 1 0 C=200pF R=0 TRANSIENT THERMAL IMPEDANCE:Rth (C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) 6 Rth(j-c) 10 1 0.001 C=150pF R=330 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 3/4 2011.10 - Rev.A Data Sheet UMN20N 1.0E-06 0.16 D.C. 0.14 8.0E-07 D=1/2 0.1 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.12 Sin(180) 0.08 0.06 0.04 D.C. 6.0E-07 D=1/2 4.0E-07 Sin(180) 2.0E-07 0.02 0 0 0.05 0.1 0.15 0.0E+00 0.2 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.2 0A Io 0V VR D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0 t T D=t/T VR=20V Tj=150C D=1/2 0.1 Sin(180) 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(C) DERATING CURVE (Io-Tc) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A