Features
1 of 4
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
D10040200PL1
45-1000MHz GaAs/GaN PWR DBLR HYBRID
The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part
employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to
1000MHz. It provides high output capability, excellent linearity, and supe-
rior return loss performance with low noise and optimal reliability.
OUTPUTINPUT
+VB
Low Current
Excellent Linearity
Superior Return Loss Perfor-
mance
Extremely Low Distortion
Optimal Reliability
Extremely Low Noise
Unconditionally Stable Under
All Terminations
High Output Capability
20.0dB Min. Gain at 1GHz
380mA Max. at 24VDC
Applications
45MHz to 1000MHz CATV
Amplifier Systems
DS091124
Package: SOT-115J
D10040200P
L1 45-
1000MHz
GaAs/GaN Pwr
Dblr Hybrid
Parameter Specification Unit Condition
Min. Typ. Max.
Overall
V
B
= 24V; T
MB
=30°C; Z
S
=Z
L
=75
Power Gain 18.5 19.0 19.5 dB f= 45 MHz
20.0 20.5 21.5 dB f=1000MHz
Slope
[1]
1.0 1.5 2.5 dB f=45MHz to 1000MHz
Flatness of Frequency Response 0.8 dB f=45MHz to 1000MHz (Peak to Valley)
Input Return Loss 20 dB f=45MHz to 320MHz
19 dB f=320MHz to 640MHz
18 dB f=640MHz to 870MHz
16 dB f=870MHz to 1000MHz
Output Return Loss 20 dB f=45MHz to 320MHz
19 dB f=320MHz to 640MHz
18 dB f=640MHz to 870MHz
17 dB f=870MHz to 1000MHz
Noise Figure 3.0 4.0 dB f=50MHz to 1000MHz
Total Current Consumption (DC) 370.0 380.0 mA
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2 of 4 DS091124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
D10040200PL1
Absolute Maximum Ratings
Parameter Rating Unit
RF Input Voltage (single tone) 65 dBmV
DC Supply Over-Voltage (5 minutes) 30 V
Storage Temperature -40 to +100 °C
Operating Mounting Base Tempera-
ture -30 to +100 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Distortion data 40MHz to
550MHz
V
B
=24V, T
MB
=30°C, Z
S
=Z
L
=75
CTB -70 -67 dBc 79 ch 7dB tilted; V
O
=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)
[2]
XMOD -65 -62 dBc 79 ch 7dB tilted; V
O
=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)
[2]
CSO -71 -68 dBc 79 ch 7dB tilted; V
O
=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)
[2]
CIN 59 63 dB 79 ch 7dB tilted; V
O
=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)
[2]
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the car-
rier being tested.
Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test Procedure for Carrier to Noise)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 4DS091124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
D10040200PL1
4 of 4 DS091124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
D10040200PL1
123 5 789
R
O
Q
M
510mm0
scale
B
N
L
F
A
D
H
ø
G
T
SP
J
U
I
EC
K
123456789
INPUT
GND
GND
+VB
GND
GND
OUTPUT
Pinning:
min max
A 44,4 44,8
B 13,4 13,8
C 19,9 20,9
D 7,85 8,15
E12,4512,75
F 37,9 38,3
G3,954,2
H3,84,2
I 25,2 25,6
J--
K4,04,4
L 27,0 27,4
M 11,1 12,1
N5,46,2
O 0,23 0,27
P 0,42 0,48
Q 2,24 2,84
R 2,04 3,04
S 2,29 2,79
T 4,83 5,33
U 4,83 5,33
nominal
44,6 ±0,2
13,6 ±0,2
20,4 ±0,5
8±0,15
12,6 ±0,15
38,1 ±0,2
4±0,2
25,4 ±0,2
4+0,2 / -0,05
UNC 6-32
4,2 ±0,2
27,2 ±0,2
11,6 ±0,5
5,8 ±0,4
0,25 ±0,02
0,45 ±0,03
2,54 ±0,3
2,54 ±0,5
2,54 ±0,25
5,08 ±0,25
5,08 ±0,25
All Dimensions in mm:
European
Projection
Notes:
