PD - 91645A IRF7389 HEXFET(R) Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description N-Ch P-Ch 30V -30V VDSS RDS(on) 0.029 0.058 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range V DS V GS IDM IS EAS IAR EAR dv/dt TJ, TSTG Maximum P-Channel N-Channel 30 Units -30 20 7.3 5.9 30 2.5 -5.3 -4.2 -30 -2.5 2.5 1.6 82 4.0 A W 140 -2.8 0.20 mJ A mJ V/ ns 3.8 -2.2 -55 to + 150 C Symbol Limit Units RJA 50 C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient www.irf.com 1 02/25/04 IRF7389 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current I GSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. 30 -30 1.0 -1.0 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Typ. Max. 0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 14 7.7 1.0 -1.0 25 -25 100 22 33 23 34 2.6 3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 710 320 380 130 180 Units V V/C V S A nA nC ns pF Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 15V, I D = 5.8A VDS = -15V, I D = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55C VDS = -24V, V GS = 0V, TJ = 55C VGS = 20V N-Channel I D = 5.8A, VDS = 15V, VGS = 10V P-Channel I D = -4.9A, V DS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0, RD = 15 P-Channel VDD = -15V, ID = -1.0A, RG = 6.0, RD = 15 N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 2.5 -2.5 A 30 -30 0.78 1.0 TJ = 25C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25C, IS = -1.7A, VGS = 0V 45 68 N-Channel ns 44 66 TJ = 25C, I F =1.7A, di/dt = 100A/s 58 87 P-Channel nC TJ = 25C, I F = -1.7A, di/dt = 100A/s 42 63 Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C P-Channel I SD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A. 2 www.irf.com IRF7389 N-Channel 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) TJ = 25C TJ = 150C 10 VDS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 5.0 TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 A 1.6 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7389 RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 N-Channel ID = 5.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.040 V GS = 4.5V 0.036 0.032 0.028 0.024 V GS = 10V 0.020 80 100 120 140 160 A 0 10 TJ , Junction Temperature ( C) E AS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance () 0.10 0.08 0.06 I D = 5.8A 0.04 0.02 0.00 6 9 12 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 40 Fig 6. Typical On-Resistance Vs. Drain Current 0.12 3 30 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 0 20 15 A 200 TOP BOTTOM 160 IID D 1.8A 3.2A 4.0A 120 80 40 A 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7389 N-Channel 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 900 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1200 Ciss Coss 600 Crss 300 0 A 1 10 100 ID = 5.8A VDS = 15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7389 100 P-Channel 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 -3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 -3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 10 Fig 12. Typical Output Characteristics 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) 10 Fig 13. Typical Output Characteristics 100 TJ = 25C TJ = 150C 10 V DS = -10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics 6 1 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) A TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 A 1.4 -VSD , Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage www.irf.com IRF7389 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS(on) , Drain-to-Source On Resistance ( ) P-Channel ID = 4.9A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.6 0.5 0.4 0.3 0.1 VGS = -10V 0.0 80 100 120 140 160 0 TJ , Junction Temperature ( C) 10 20 Fig 17. Typical On-Resistance Vs. Drain Current 0.16 0.12 I D = -4.9A 0.04 0.00 0 3 6 9 12 15 -VGS , Gate -to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage www.irf.com A EAS , Single Pulse Avalanche Energy (mJ) 300 0.08 30 -ID , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to-Source On Resistance ( ) V GS = -4.5V 0.2 ID -1.3A -2.2A BOTTOM -2.8A TOP 250 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 19. Maximum Avalanche Energy Vs. Drain Current 7 A IRF7389 VGS = 0V Ciss = Cgs + Cgd + Cds Crss = Cgd 1200 20 f = 1 MHz SHORTED -VGS , Gate-to-Source Voltage (V) 1400 P-Channel C, Capacitance (pF) Coss = Cds + Cgd 1000 Ciss 800 Coss 600 400 Crss 200 0 A 1 10 100 ID = -4.9A VDS =-15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) - V DS , Drain-to-Source Voltage (V) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7389 Package Outline SO8 Outline DIM D -B- 5 8 7 6 5 1 2 3 0.25 (.010) 4 e 6X M A M K x 45 e1 A -C- 0.10 (.004) 0.25 (.010) L 8X A1 B 8X 6 C 8X M C A S B S MILLIMETERS MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 5 H E -A- INCHES MIN e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 0 8 0 8 RECOMMENDED FOOTPRINT NOTES: 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 6.46 ( .255 ) 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 EXAMPLE : THIS IS AN IRF7101 312 100 INTERNATIONAL RECTIFIER LOGO XXXX F7101 TOP www.irf.com DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK PART NUMBER WAFER LOT CODE (LAST 4 DIGITS) BOTTOM 9 IRF7389 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/04 10 www.irf.com