Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET VDS (V) 20 rDS(on) () ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8 TA= 25C Continuous Drain Current (TJ = 150C)b Pulsed Drain TA= 70C Currenta Power Dissipationb TA= 70C Operating Junction and Storage Temperature Range 2.2 A IS TA= 25C V 2.8 ID IDM Continuous Source Current (Diode Conduction)b Unit 10 1.6 1.25 PD W 0.80 TJ, Tstg -55 to 150 C Symbol Limit Unit Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc 100 C/W RthJA 166 Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70628 S-53600--Rev. D, 22-May-97 www.vishay.com FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 10 mA 20 VGS(th) VDS = VGS, ID = 50 mA 0.65 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage On-State Drain Currenta Drain-Source On-Resistancea ID(on) V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55C 10 VDS w 5 V, VGS = 4.5 V 6 VDS w 5 V, VGS = 2.5 V 4 nA mA A VGS = 4.5 V, ID = 3.6 A 0.07 0.085 VGS = 2.5 V, ID = 3.1 A 0.085 0.115 W rDS(on) Forward Transconductancea gfs VDS = 5 V, ID = 3.6 A 10 Diode Forward Voltage VSD IS = 1.6 A, VGS = 0 V 0.76 1.2 5.4 10 S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.60 Input Capacitance Ciss 340 Output Capacitance Coss Reverse Transfer Capacitance Crss 33 td(on) 12 25 36 60 34 60 10 25 VDS = 10 V V, VGS = 4 4.5 V, ID = 3 3.6 5V 6A VDS = 10 V V, VGS = 0 V, V f = 1 MHz MH 0.65 nC C 115 pF F Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW v300 ms duty cycle v2%.. www.vishay.com FaxBack 408-970-5600 2-2 tr td(off) tf VDD = 10 V V,, RL = 5 5.5 5W ID ^ 3.6 3 6 A, A VGEN = 4 4.5 5V V, RG = 6 W ns VNLR02 Document Number: 70628 S-53600--Rev. D, 22-May-97 Si2302DS Vishay Siliconix Output Characteristics 10 Transfer Characteristics 10 VGS = 5 thru 2.5 V 8 2V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 2 TC = 125C 4 2 1.5 V 0, 0.5, 1 V 6 25C -55C 0 0 0 1 2 3 4 5 0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.15 1000 0.12 800 C - Capacitance (pF) r DS(on)- On-Resistance ( ) 1.5 VGS = 2.5 V 0.09 VGS = 4.5 V 0.06 0.03 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 Gate Charge 1.8 1.6 4 r DS(on)- On-Resistance ( ) (Normalized) V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.6 A 3 2 1 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) Document Number: 70628 S-53600--Rev. D, 22-May-97 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 5 4 6 7 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 TJ - Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si2302DS Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150C TJ = 25C 0.16 0.12 ID = 3.6 A 0.08 0.04 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) Threshold Voltage 8 Single Pulse Power 14 0.1 12 10 ID = 250 mA Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) 0.2 -0.0 4 -0.1 8 TC = 25C Single Pulse 6 -0.2 4 -0.3 2 -0.4 -50 0 0 50 100 150 0.01 0.10 TJ - Temperature (C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70628 S-53600--Rev. D, 22-May-97 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1