APTGF150X60TE3G 3 Phase bridge NPT IGBT Power Module VCES = 600V IC = 150A @ Tc = 80C Application P+ Q1 Q3 Q5 5 1 * 9 6 2 T1 Features 10 U V W R 7 3 8 Q2 4 * Non Punch Through (NPT) Fast IGBT (R) * * * * - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 11 12 Q4 Q6 T2 N- 19 Benefits 17 18 AC Motor control 16 15 14 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area * * * * * * * * TC = 25C Max ratings 600 225 150 450 20 700 Tj = 125C 400A@480V TC = 25C TC = 80C TC = 25C Unit V A April, 2006 20 Outstanding performance at high frequency operation Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGF150X60TE3G - Rev 2 * APTGF150X60TE3G All ratings @ Tj = 25C unless otherwise specified Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 200A Tj = 125C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Diode Forward Voltage Er Reverse Recovery Energy trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ VGE = 0V VCE = 600V 1.7 Min Test Conditions Min 600 VR=600V IF = 150A VGE = 0V IF = 150A VR = 300V di/dt =5600A/s 2.0 2.2 4.5 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A R G = 1.5 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 200A R G = 1.5 VGE = 15V Tj = 125C VBus = 300V IC = 200A Tj = 125C R G = 1.5 DC Forward Current VF Min Typ 9000 800 163 43 253 250 500 2.5 Unit A V 6.5 400 V nA Max Unit pF ns 33 180 49 ns 285 41 3.7 mJ 6.3 Typ Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C 150 1.25 1.2 Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 4 150 250 11 17 APT website - http://www.advancedpower.com Max Max 250 500 Unit V A A 1.6 V mJ ns April, 2006 Symbol Characteristic C 2-5 APTGF150X60TE3G - Rev 2 Electrical Characteristics APTGF150X60TE3G Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K RT = R25 1 1 - exp B25 / 50 T25 T Symbol Characteristic VISOL TJ TSTG TC Torque Wt Max Unit k K Min Typ Max 0.18 0.44 Unit IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ 5 3375 T: Thermistor temperature RT : Thermistor value at T Thermal and package characteristics RthJC Min To heatsink M5 2500 -40 -40 -40 3 C/W V 150 125 125 4.5 300 C N.m g E3 Package outline (dimensions in mm) PIN 1 A LL DIM ENS IONS MARKED " * " A RE TOL ERE NCED AS : APT website - http://www.advancedpower.com 3-5 APTGF150X60TE3G - Rev 2 April, 2006 PIN 21 APTGF150X60TE3G Typical Performance Curve Output Characteristics (VGE =15V) Output Characteristics 400 400 300 250 250 IC (A) IC (A) 300 T J=125C 200 VGE =15V VGE =20V 150 100 100 T J=125C 50 VGE =9V 50 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 400 12 TJ=25C 350 300 VCE = 300V VGE = 15V RG = 1.5 TJ = 125C 9 E (mJ) 250 200 150 Er Er TJ =25C Eon 0 0 6 7 Eon 3 50 5 Eoff 6 T J=125C 100 8 9 10 11 0 12 100 200 300 400 IC (A) V GE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 20 500 VCE = 300V VGE =15V IC = 200A TJ = 125C 10 Eon 400 IC (A) 15 E (mJ) VGE=12V 200 150 IC (A) TJ = 125C 350 TJ=25C 350 Eoff 300 Eoff 200 Er 100 5 VGE=15V T J=125C RG=1.5 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 0 16 100 200 300 400 500 600 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 IGBT 0.9 April, 2006 0.7 0.12 0.5 0.08 0.04 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGF150X60TE3G - Rev 2 Thermal Impedance (C/W) 0.2 APTGF150X60TE3G Forward Characteristic of diode 300 60 V CE=300V D=50% RG =1.5 TJ=125C TC=75C ZCS 50 ZVS 40 250 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 hard switching 30 150 100 20 10 50 0 0 0 50 100 150 I C (A) 200 TJ=125C TJ =25C 0 250 0.25 0.5 0.75 VF (V) 1 1.25 1.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.45 0.4 0.35 0.9 Diode 0.7 0.3 0.25 0.2 0.15 0.5 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGF150X60TE3G - Rev 2 April, 2006 rectangular Pulse Duration (Seconds)