APTGF150X60TE3G
APTGF150X60TE3G – Rev 2 April, 2006
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–
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Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 225
IC Continuous Collector Current TC = 80°C 150
ICM Pulsed Collector Current TC = 25°C 450
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 700 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 400A@480V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
T1
R
T2
Q5
11
12 Q6
9
10
V
8
Q2
5
6
U
Q1
W
1
P+
2
N-
4
3
Q3
Q4
7
1516
17
13
14
8791110
1819
56341
21
20
122
VCES = 600V
IC = 150A @ Tc = 80°C
Applicatio
n
• AC Motor control
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching freque nc y up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstandi ng perfor mance at hi gh freque ncy
operation
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
3 Phase bridge
N
P
T IGBT Power Module
APTGF150X60TE3G
APTGF150X60TE3G – Rev 2 April, 2006
APT website
–
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www.advancedpower.com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 500
µA
Tj = 25°C 1.7 2.0 2.5
VCE(sat) Collector Emitter saturation Voltage VGE =15V
IC = 200A Tj = 125°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 4 mA 4.5 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 9000
Cres Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz 800 pF
Td(on) Turn-on Delay Time 163
Tr Rise Time 43
Td(off) Turn-off Delay Time 253
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω 33
ns
Td(on) Turn-on Delay Time 180
Tr Rise Time 49
Td(off) Turn-off Delay Time 285
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω 41
ns
Eon Turn on Energy Tj = 125°C 3.7
Eoff Turn off Energy
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω Tj = 125°C 6.3
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 150 A
Tj = 25°C 1.25 1.6
VF Diode Forward Voltage IF = 150A
VGE = 0V Tj = 125°C 1.2 V
Er Reverse Recovery Energy Tj = 125°C 4 mJ
Tj = 25°C 150
trr Reverse Recovery Time Tj = 125°C 250 ns
Tj = 25°C 11
Qrr Reverse Recovery Charge
IF = 150A
VR = 300V
di/dt =5600A/µs
Tj = 125°C 17 µC
APTGF150X60TE3G
APTGF150X60TE3G – Rev 2 April, 2006
APT website
–
http:/
/
www.advancedpower.com 3 - 5
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 5
kΩ
B 25/50 T
25 = 298.16 K 3375 K
−
=
TT
B
R
RT
11
exp
25
50/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.18
RthJC Junction to Case Thermal Resistance Diode 0.44
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
Torque Mounting torque To heatsink M5 3 4.5 N.m
Wt Package Weight 300 g
E3 Package outline (dimensions in mm)
PIN 1
PIN 21
A LL DIM ENS IONS MAR KED " * " A RE T OL ERE NC ED AS :
T: Thermistor temperature
RT: Thermistor value at T
APTGF150X60TE3G
APTGF150X60TE3G – Rev 2 April, 2006
APT website
–
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Typical Performance Curve
Output Characteristics (VGE =15V)
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
00.511.522.533.5
VCE (V)
IC (A)
Output Characteristics
VGE=15V
VGE
=12V
VGE=20V
VGE=9V
0
50
100
150
200
250
300
350
400
012345
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
400
56789101112
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
Er
0
3
6
9
12
0 100 200 300 400
IC (A)
E (mJ)
VCE = 300V
VGE = 15V
RG = 1.5 Ω
TJ = 125°C
Eon
Eoff
Eoff
Er
0
5
10
15
20
0246810121416
Gate Resistance (ohms)
E (mJ)
VCE = 300V
VGE =15V
IC = 200A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
100
200
300
400
500
0 100 200 300 400 500 600
VCE (V)
IC (A)
VGE
=15V
TJ=125°C
R
G
=1.5 Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGF150X60TE3G
APTGF150X60TE3G – Rev 2 April, 2006
APT website
–
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/
www.advancedpower.com 5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
0 0.25 0.5 0.75 1 1.25 1.5
VF (V)
IF (A)
hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
70
0 50 100 150 200 250
IC (A)
Fmax, Operating Frequency (kHz)
VCE=300V
D=50%
RG=1.5 Ω
TJ=125°C
TC=75°C
Operatin
g
Frequenc
y
vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
APT re s erves the rig ht to c ha nge , without notice , the s pe cificatio ns and i nfo rmatio n co nta ine d he rein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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