DATA SH EET
Product data sheet
Supersedes data of 1996 Mar 19 2001 Sep 05
DISCRETE SEMICONDUCTORS
BAT74
Schottky barrier double diode
M3D071
2001 Sep 05 2
NXP Semiconductors Product data sheet
Schottky barrier double diode BAT74
FEATURES
•Low forward vo lta ge
•Guard ring protected
•Small plastic SMD package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes.
DESCRIPTION
Planar Schottky barrier do uble diode. Two separate dies
encapsulated in a SOT143B small plastic SMD package.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BAT74 L41
PIN DESCRIPTION
1cathode (k1)
2cathode (k2)
3anode (a2)
4anode (a1)
Fig.1 Simplified outline (SOT143B), pin
configuration and s ymb ol.
handbook, halfpage 43
21
Top view MAM194
2
3
4
1
LIMITING VALUES
In accordance wi th the Absolute Maximum Rating System (IEC 60134) .
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse operation and the other is in forward operation at th e same moment, total device current is max. 200 mA.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous revers e voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −300 mA
IFSM non-repetitive peak forward current tp < 10 ms 600 mA
Ptot total power dissipation Tamb ≤ 25 °C; see Fig.2 −230 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
Tamb operating ambient temperature −65 +125 °C
Double diode operation
VRcontinuous revers e voltage −30 V
series connec tio n −60 V
IFcontinuous forward current −110(1) mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −200 mA
2001 Sep 05 3
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier double diode BAT74
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT143B standard mou nting conditions.
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C unless otherwise specified.
Notes
1. Temperature c oefficient of forward voltage −0.6%/K.
2. Pulsed test: tp = 300μs; δ = 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 0.1 mA 240 mV
IF = 1 mA; note 1 320 mV
IF = 10 mA 400 mV
IF = 30 mA 500 mV
IF = 100 mA 800 mV
IRreverse current VR = 25 V; note 2; see Fig.4 2 μA
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.6
5ns
Cddiode capacit an ce f = 1 MHz; VR = 1 V; see Fig.5 10 pF
2001 Sep 05 4
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier double diode BAT74
Fig.2 Power derating curve.
0
100
200
300
Ptot
(mW)
MSA894
150750 Tamb ( C)
o
Fig.3 Forward current as a function of forward
voltage; typical values.
h
andbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.4 Reverse current as a fun ction of reverse
voltage; typical values.
0102030
V (V)
R
10
3
IR
(μA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
h
andbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
2001 Sep 05 5
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier double diode BAT74
Fig.6 Reverse recovery definitions.
handbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IRMRC129 - 1
F
r
2001 Sep 05 6
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier double diode BAT74
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.45
0.15 0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 97-02-28
0 1 2 mm
scale
Plastic surface mounted package; 4 leads SOT143B
D
HE
EA
B
v
M
A
X
A
A1
Lp
Q
detail X
c
y
w
M
e1
e
B
21
34
b1
bp
2001 Sep 05 7
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier double diode BAT74
DATA SHEET STATUS
Notes
1. Please consult the most recently issued docu ment before initiating or completing a des ign.
2. The prod uct status of device(s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Sep 05 Document orde r number: 9397 750 08588
