b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base) IN ORDER OF (1) CATEGORY & (2) TYPE No. DESCRIPTION BVEO-35V.1C-30mA.ft-30Mc:hFE 1/2-.80-VB 1- OmV max;hFE-100 min. -1.5m 1. VBE1/VBE2-3.0mV;hFE 1/hFE2-1.0 30mA. - m . - m (DSS1/2-.95 min;VGS1/2-10mV max;Yfs1/2-.95 min. Pt 300mW both sides;hFE1/2 1.0 max:VBE(1-2) 3.0mV max. Pt 300mW both sides:;hFE1/2 1.0 1 1-2) 3.0mV max. Pt 300mW both sides;hFE1/2 1.0 max:VBE(1-2) 3.0mV max. / - mV max. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV max. . : mV max. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV_ max. Pt..30W:hFE( 1-2}. E 1-VBE2)-1.0mV max:B Pc-..75W; BVCBO-60V; BVEBO-7.0V; HFE-45min at IC-10ma, VCE-10V. - max. -1.1 max; - mV max. BC327/BC328 i hFEt/hFE2 1.41 max;Pt W:BVCES 50V;ft 100MHz. . ~ .80 m BSY42 i Pc-.70W max; BVCBO-20V; Ic-200mA;hFE-25-120;ft- min. -.80 min; . - max. cp92" i hFE1/2-.80 min;VBE1/2-10mV_ max:AVBE1/2-20uV/C max. o n: - = max, cpes* i hFE1/2-.80 min;VBE1/2-5.0mV max:;AVBE1/2-10uV/C max. =, - max. cDg8* i hFE1/2-.80 min;VBE1/2-10mV max;AVBE1/2-20uV/C max. * - oe a 2 max, cDd932* i hFE1/2-.80 min;VBE1/2-5.0mV max;AVBE1/2-10uV/C max. * =, - -. . max. cbp962* i HFE1/2-.80 min;VBE1/2-10mV_ max;AVBE1/2-20uV/C max. * S ~ -. - = max. CS$2639* i Pt. 30W:hFE1/2-.90 min;VBE(1 .OmV;hFE-65 max. at IC-1.0mA. -. -2)-5. max. at : CS2643* i Pt. 3OW:hFE 1/2-.80 min: VBE(1-2)-10mV;hFE-65 max. at [C-1.0mA. * = : = =. n; ~ max at IC-. C$29011* i Pt. 3OW-HFE1/2-.90 min; VBE(1-2)-5.OmV;hFE-300 max at IC-.10mA. * = -, - max. 012E026 i hFE1/2-.60 min, 1.0 max:VBE(1-2}-15mV max;Pc-SOOmW both. =, n,1.0 max; - m D12X084A i VCEO-15V max;hFE-30 min. at 10mA;AhFE-20% AVBEtS OmvV. - =. n. DP1001* i gm1/2-.95 min; 1- OmV;AVGS(1-2)/AT- mon * mi - . - - gm . . ~ DP1004* i gm1/2-.95 min; 15mV:A 1-2)/AT-25uV/C. * =. gm1/2-.95 m -2)-5. ; ~ - DP1007* i gm1/2-.95 min; 15mV;AVGS(1-2)/AT-10uV/C. gm1/2.. n; m - -25u : DP1010* i 1/2-.90 min; 2.0mV;A 1-2)/AT-5O0uV/C. 5 . > . max. FM1102* i Pd 500mW:IDSS 1/2 1 OmvV' 1-2)10nAmax:Yfs 1/2 1.0 max. * : - .O max. FM1105* i 500mW:IDSS 1/2 1. 2.0mVmax;IG(1-2)10nAmax;Yfs 1/2 1.0max. * . - . max, FM1108* i 500mW:IDSS 10mvV. 1-2)10nAmax;Yfs 1/2 1.0 max. * ~ - FM1111* 500mW:|DSS 1-2)50mVmax1G( 1-2 Vis 1/2 1.0 max. FM1202* 500mW:IDSS : 1-2) 10mV 1-2)1 1/2 1.0max. * - FM1205* i 500mW:1DSS -2)2.0mV 1-2)10nAmax.Yfs 1/2 1.0max. x : : FM1208* 500mW:IDSS : 2)10mVmaxlG(1-2)10nAmaxYis 1/2 1Omax. * - FM1211* i 500mW:IDSS : Vv 1- Yfs 1/2 1.0max. ; x I. : - max. FT4021 i BVCEO-60V:20% match:Cob-6,Opf:VBE( 1-2)-5.OmV:ICBO-10nA max. ; Opt: -2)-3. max. FT4024 i BVCEO-60V;10% match;Cob-6.0pf;VBE(1- -OmV;ICBO-10nA max. SYMBOLS AND CODES 124 D.A.T.A. EXPLAINED IN INTERPRETER 124