MRF314 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF314 is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L FLG FEATURES: * PG = 10 dB min. at 30 W/ 150 MHz * Withstands 30:1 Load VSWR * OmnigoldTM Metalization System MAXIMUM RATINGS IC 3.4 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS 82 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C JC 2.13 C/W CHARACTERISTICS ORDER CODE: ASI10872 TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 30 mA 35 V BVCES IC = 30 mA 65 V BVEBO IE = 3.0 mA 4.0 V ICBO VE = 30 V hFE VCE = 5.0 V COB VCB = 30 V PG C VCC = 28 V IC = 1.5 A 20 f = 1.0 MHz POUT = 30 W f = 150 MHz 30 10 50 13.5 3.0 mA 80 --- 40 pF dB % 30:1 all phase angles, no degadation in output. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Advanced Semiconductor, Inc.: MRF314