Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1880(L), 2SK1880(S)
Silicon N Channel MOS FET REJ03G0983-0200
(Previous : AD E-208- 1 331)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
D
G
S
123
4
123
4
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 600 V
Gate to source voltage VGSS ±30 V
Drain current ID 1.5 A
Drain peak current ID(pulse)*1 3.0 A
Body to drain diode reverse drain current IDR 1.5 A
Channel dissipation Pch*2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 100 µA VDS = 500 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 6.5 8.0 Ω I
D = 1 A, VGS = 10 V*3
Forward transfer admittance |yfs| 0.85 1.4 — S ID = 1 A, VDS = 20 V*3
Input capacitan ce Ciss — 250 — pF
Output capacitance Coss — 55 — pF
Reverse transfer capacitance Crss — 8 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 10 — ns
Rise time tr — 25 — ns
Turn-off delay time td(off) — 35 — ns
Fall time tf — 30 — ns
ID = 1 A, VGS = 10 V,
RL = 30 Ω
Body to drain diode forward voltage VDF — 0.95 — V IF = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time trr — 350 — µs IF = 1.5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse Test
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
30
20
10
50 100 150
0
1 ms
PW = 10 ms (1 shot)
100 s
µ
10 s
µ
Operation in this
area is limited
by R (on)
DS
0.1 0.3 1 3 10 300 1000
Ta = 25°C
DC Operation (Tc = 25°C)
10
3
1
0.3
0.1
0.03
0.01
2.0
1.6
1.2
0.8
0.4
GS
V = 3.5 V
10 V
5 V
4.5 V
4 V
10 20 30 40 50
Pulse Test
0
DS
V = 20 V
Pulse Test
2.0
1.6
1.2
0.8
0.4
2
Tc = 25°C
–25°C
75°C
46810
0
Pulse Test
04
20
16
12
8
4
I = 1.5 A
D
1 A
0.5 A
812 2016
V = 10 V
GS
0.1 0.2 0.5 1 2 5
100
0.05
50
20
10
5
2
1
Pulse Test
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A) Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
20
16
12
8
4
I = 1 A
D
–40
0.5 A
0 40 80 120 160
Tc = –25°C
75°C
5
2
1
0.5
0.2
0.1
0.05
25°C
Pulse Test
V = 20 V
DS
0.02 0.05 0.1 0.2 0.5 1 2
di/dt = 100 A/ s
V = 0
Ta = 25°C
Pulse Test
5000
0.1 0.2 0.5 1 2 5 10
GS
µ
2000
1000
500
200
100
50
1000
100
10
1
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
01020304050
1000
800
600
400
200
20
16
12
8
4
0
I = 1.5 A
D
V = 100 V
250 V
400 V
DD
048121620
V = 100 V
250 V
400 V
DD
V
GS
V
DS
500
200
100
50
20
10
5
0.1 0.2 0.5 1 2 5 10
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
tf
tr
td(off)
td(on)
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 5 of 7
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
2.0
1.6
1.2
0.8
0.4
0.4 0.8 1.2 1.6 2.0
GS
Pulse Test
V = 10 V
0 V, –5 V
0
10 100 1 m 10 m 100 m 10
0.01
0.03
0.1
0.3
1.0
3
µµ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25°C
0.01
1
θch – c(t) = s(t) ch – c
ch – c = 6.25°C / W. Tc = 25°C
PD = PW
T
PW
T
DM
γ•
θθ
Reverse Drain Current vs.
Source to Drain Voltage
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 6 of 7
Package Dimensions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
Package Name
PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SK1880(L) , 2SK 188 0( S)
Rev.2.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK1880L-E 3200 pcs Box (Sack)
2SK1880STL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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