NOT RECOMMENDED FOR NEW DESIGN USE DMC3071LVT DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 30V Q2 Features and Benefits * * * * * * * ID RDS(on) TA = +25C 60m @ VGS = 10V 3.4A 100m @ VGS = 4.5V 2.7A 95m @ VGS = -10V -2.8A 140m @ VGS = -4.5V -2.3A -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, * * making it ideal for high-efficiency power management applications. * * * * * * Backlighting DC-DC Converters Power Management Functions * Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish--Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) D1 D2 TSOT26 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Top View G1 G2 S1 Top View S2 Q2 P-Channel Q1 N-Channel Ordering Information (Note 3) Part Number DMG6602SVT-7 Notes: Case TSOT26 Packaging 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 66C Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMG6602SVT Document number: DS35159 Rev. 8 - 3 Mar 3 YM Marking Information 2012 Z Apr 4 66C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2013 A May 5 Jun 6 2014 B Jul 7 1 of 10 www.diodes.com 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D December 2018 (c) Diodes Incorporated DMG6602SVT Maximum Ratings - Q1 (@TA = +25C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) ID ID IS IDM Value 30 20 3.4 2.7 2.7 2.2 1.5 25 Unit V V A A A A Maximum Ratings - Q2 (@TA = +25C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) ID ID IS ID Value -30 20 -2.8 -2.4 -2.3 -2.1 -1.5 -20 Unit V V A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25C TA = +70C Steady State t < 10s TA = +25C TA = +70C Steady State t < 10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: PD RJA PD RJA RJC TJ, TSTG Value 0.84 0.52 155 109 1.27 0.8 102 71 34 -55 to +150 Units W C/W W C/W C 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. DMG6602SVT Document number: DS35159 Rev. 8 - 3 2 of 10 www.diodes.com December 2018 (c) Diodes Incorporated DMG6602SVT Electrical Characteristics - Q1 NMOS (@TA = +25C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 -- -- -- -- -- -- 1.0 100 V A nA VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 1.0 -- 2.3 V RDS (ON) -- 38 55 60 100 m |Yfs| VSD -- -- 4 0.8 -- 1 S V VDS = VGS, ID = 250A VGS = 10V, ID = 3.1A VGS = 4.5V, ID = 2A VDS = 5V, ID = 3.1A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf -- -- -- -- -- -- -- -- -- -- -- -- 290 40 40 1.4 4 9 1.2 1.5 3 5 13 3 400 80 80 -- 6 13 -- -- -- -- -- -- VDS = 15V, VGS = 0V, f = 1.2MHz pF VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID = 3.1A nC VDS = 15V, VGS = 10V, ID = 3A VGS = 10V, VDS = 15V, RG = 3, RL = 4.7 ns 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 10 10.0 VDS= 5.0V 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8.0 6.0 4.0 4 2 2.0 0.0 0 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DMG6602SVT Document number: DS35159 Rev. 8 - 3 0 5 1 2 3 4 5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 3 of 10 www.diodes.com December 2018 (c) Diodes Incorporated 1 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() DMG6602SVT RDS(ON)( ) Ave @ VG=4.5V R DS(ON)() Ave @ VG=10V 0.01 8 12 16 4 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.16 VGS = 4.5V 0.12 Ave RDS(ON)( ) @ 125C 0.08 Ave RDS(ON)() @ 85C Ave RDS(ON)( ) @ 25C 0.04 Ave R DS(ON)() @ -55C 0 0 20 8 6 2 4 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 1.6 1.4 1.2 1 0.8 0.08 0.06 0.04 0.02 0.6 0 -50 50 75 100 125 150 -25 0 25 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature -50 2.0 1.6 ID= 1mA 0.8 0.4 0 -50 75 100 125 150 -25 0 25 50 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG6602SVT Document number: DS35159 Rev. 8 - 3 8 IS, SOURCE CURRENT (A) ID= 250A 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature 10 2.4 VGS(th), GATE THRESHOLD VOLTAGE (V) Ave R DS(ON)() @ 150C VSD (V) @ VDS =0V TA = 25C 6 4 2 0 0 4 of 10 www.diodes.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current December 2018 (c) Diodes Incorporated DMG6602SVT 10 1000 V GS GATE THRESHOLD VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACITANCE (pF) CISS Ave (pF) COSS Ave (pF) 100 CRSS Ave (pF) 10 0 5 10 15 20 25 30 8 VDS = 10V ID = 3.0A 6 4 2 0 0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 8 2 4 6 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate Charge 10 100 ID, DRAIN CURRENT (A) RDS(on) Limited PW = 100s 10 DC 1 PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150C TA = 25C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMG6602SVT Document number: DS35159 Rev. 8 - 3 100 5 of 10 www.diodes.com December 2018 (c) Diodes Incorporated DMG6602SVT Electrical Characteristics - Q2 PMOS (@TA = +25C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Min Typ Max Unit BVDSS IDSS IGSS -30 -- -- -- -- -- -- -1.0 100 V A nA VGS = 0V, ID = -250A VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) -1.0 -- -2.3 V RDS (ON) -- 73 99 95 140 m |Yfs| VSD -- -- 6 -0.8 -- -1.0 S V VDS = VGS, ID = -250A VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2A VDS = -5V, ID = -2.7A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf -- -- -- -- -- -- -- -- -- -- -- -- 350 50 45 17.1 4 7 0.9 1.2 4.8 7.3 20 13 420 100 80 -- 6 9 -- -- -- -- -- -- pF nC ns Test Condition VDS = -15V, VGS = 0V, f = 1.2MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, VGS = -4.5V, ID = -3A VDS = -15V, VGS = -10V, ID = -3A VGS = -10V, VDS = -15V, RG = 6, RL = 15 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 8.0 8 6.0 6 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT Notes: Symbol 4.0 2.0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 12 Typical Output Characteristics DMG6602SVT Document number: DS35159 Rev. 8 - 3 5 4 2 0 0 6 of 10 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 13 Typical Transfer Characteristics 5 December 2018 (c) Diodes Incorporated DMG6602SVT RDS(ON), DRAIN-SOURCE ON-RESISTANCE( ) RDS(ON)() Ave @ VG=2.5V 0.35 0.3 0.25 0.2 0.15 RDS(ON)( ) Ave @ VG=4.5V 0.1 0.05 0 RDS(ON)( ) Ave @ VG=10V 2 4 6 ID, DRAIN SOURCE CURRENT Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 1.4 1.2 1 0.8 0.6 -50 Ave RDS(ON)() @ 125C 0.12 Ave RDS(ON)() @ 85C 0.08 Ave RDS(ON)( ) @ 25C 0.04 Ave RDS(ON)( ) @ -55C 0 0.12 0.08 0.04 0.8 0 -50 25 50 75 100 125 150 -25 0 TJ, JUNCTION TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature 8 IS, SOURCE CURRENT (V) 1.2 8 0.16 2 1.6 2 4 6 ID, DRAIN SOURCE CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 0.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 16 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) Ave RDS(ON)() @ 150C 0.16 8 1.6 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0.2 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0.4 6 4 2 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature DMG6602SVT Document number: DS35159 Rev. 8 - 3 0 0 7 of 10 www.diodes.com 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, SOURCE -DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current December 2018 (c) Diodes Incorporated DMG6602SVT 1000 10 -VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz CISS Ave(pF) 100 COSS Ave(pF) CRSS Ave(pF) 8 VDS = -15 ID = -3A 6 4 2 0 10 0 5 10 15 20 25 30 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Junction Capacitance 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 21 Gate Charge 10 100 -ID, DRAIN CURRENT (A) RDS(on) Limited PW = 100s 10 1 DC PW = 10s PW = 1s 0.1 T J(max) = 150C PW = 100ms PW = 10ms PW = 1ms TA = 25C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 22 SOA, Safe Operation Area 100 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 164C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 DMG6602SVT Document number: DS35159 Rev. 8 - 3 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 23 Transient Thermal Resistance 8 of 10 www.diodes.com 10 100 1000 December 2018 (c) Diodes Incorporated DMG6602SVT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 D e1 01( 4x) E1/2 E/2 E1 c E Gauge Plane 0 L L2 01( 4x) b e Seating Plane A2 A1 A Seating Plane TSOT26 Dim Min Max Typ A 1.00 - - A1 0.010 0.100 - A2 0.840 0.900 - D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 - c 0.120 0.200 - e 0.950 BSC e1 1.900 BSC L 0.30 0.50 - L2 0.250 BSC 0 8 4 1 4 12 - All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y X DMG6602SVT Document number: DS35159 Rev. 8 - 3 9 of 10 www.diodes.com December 2018 (c) Diodes Incorporated DMG6602SVT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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