PD- 91381A IRFL4105 HEXFET(R) Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045 G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. S O T -22 3 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units 5.2 3.7 3.0 30 2.1 1.0 8.3 20 110 3.7 0.10 5.0 -55 to + 150 A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. Max. Units 90 50 120 60 C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 1/14/99 IRFL4105 Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 3.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.058 --- --- --- --- --- --- --- 23 3.4 9.8 7.1 12 19 12 660 230 99 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 10V, ID = 3.7A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 1.9A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 35 ID = 3.7A 5.1 nC VDS = 44V 15 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 3.7A ns --- RG = 6.0 --- RD = 7.5, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 1.3 --- --- 30 --- --- --- --- 55 120 1.3 82 170 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 3.7A, VGS = 0V TJ = 25C, I F = 3.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 16mH ISD 3.7A, di/dt 110A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. RG = 25, IAS = 3.7A. (See Figure 12) 2 www.irf.com IRFL4105 I , D rain-to-S ou rc e C urre nt (A ) D TO P BO TTOM 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 4 .5 V 2 0 s P U L S E W ID T H T C = 25 C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , D rain-to-S ource C urrent (A ) D 100 1 10 A 10 4 .5V 20 s P U LS E W ID TH T J = 1 50 C 1 0.1 100 1 Fig 2. Typical Output Characteristics, TJ = 150oC Fig 1. Typical Output Characteristics, TJ = 25oC 2.0 R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d) I D , D rain-to-So urce C urren t (A ) 100 TJ = 2 5C TJ = 1 5 0 C 10 V DS = 25V 2 0 s P UL S E W ID TH 4.0 4.5 5.0 5.5 6.0 6.5 V G S , G ate-to -So urce Voltag e (V) Fig 3. Typical Transfer Characteristics www.irf.com A 100 V DS , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V ) 1 10 7.0 A I D = 3.7 A 1.5 1.0 0.5 V G S = 1 0V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 T J , J unc tion T em perature (C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFL4105 20 1000 C , Capacitance (pF) C iss V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd V G S , G ate-to-S ource V oltage (V ) 1200 I D = 3.7 A V D S = 24 V V D S = 15 V 16 800 12 C oss 600 400 C rss 200 0 10 4 FO R TE S T C IR C U IT S E E FIG U R E 9 0 A 1 8 0 100 10 A 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) 10s I D , Drain C urrent (A ) I S D , Reverse D rain C urrent (A) 30 Q G , T otal G ate C harge (nC ) V D S , D rain-to-S ourc e V oltage (V ) TJ = 1 50 C 10 T J = 25 C V G S = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 A 1.6 10 100 s 1m s 1 10m s 0.1 T A = 25 C T J = 15 0C S ing le P u lse 0.1 A 1 10 100 V D S , D rain-to-S ource V oltage (V ) Fig 8. Maximum Safe Operating Area www.irf.com IRFL4105 10V VGS QGS RD VDS QG QGD D.U.T. RG + - VDD VG 10V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 90% 50K .2F 12V .3F D.U.T. + V - DS 10% VGS VGS td(on) 3mA IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms T herm al R es pon se (Z thJ A ) 1000 100 D = 0 .5 0 0 .2 0 0 .1 0 10 0 .0 5 0 .0 2 0 .0 1 1 PD M t 0.1 t2 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 0.01 0.00001 1 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 . P e a k T J = P D M x Z th J A + T A 0.0001 0.001 0.01 0.1 1 10 100 1000 A 10000 t 1 , R e c ta n g u la r P u lse D u ra tio n (se c ) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFL4105 L VDS D .U .T RG IA S 20 V D RIV E R + - VD D 0 .01 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A E A S , S ingle P ulse A valanche E nergy (m J) 300 1 5V TO P 250 B O TTO M ID 1 .7A 3 .0A 3.7 A 200 150 100 50 0 V D D = 25 V 25 50 A 75 100 125 150 S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRFL4105 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 IRFL4105 Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP 8 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R W W = W E EK B O TT O M www.irf.com IRFL4105 Tape & Reel Information SOT-223 Outline 2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 ) TR 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 ) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) 2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 ) 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 330.00 (13.000) M AX. N O TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 5 0.00 (1 .9 6 9 ) M IN . 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.72 4 ) M AX . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 1/99 www.irf.com 9