SILICON EPITAXIAL PLANAR
PNP POWER TRANSISTOR
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Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab Ltd
Semelab LtdSemelab Ltd
Semelab Ltd
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8333
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 1
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 1 of 3
2N5333
• Low Saturation Voltage
• Fast Switching
• Hermetic TO39 Metal package.
• For power amplifier and high speed Switching Applications
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage -100V
VCEO Collector – Emitter Voltage -80V
VEBO Emitter – Base Voltage -6V
IC Continuous Collector Current -2A
ICM Peak Collector Current -5A
IB Base Current -1A
IE Emitter Current -3A
PD Total Power Dissipation at TA = 25°C 1.0W
Derate Above 25°C 0.15W/°C
PD Total Power Dissipation at TC = 100°C 15W
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
Lead Temperature
(1/16 Inch from Case for 10 seconds)
260°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC
Thermal Resistance, Junction To Case 6.66 °C/W
RθJA
Thermal Resistance, Junction To Ambient 175 °C/W
SILICON EPITAXIAL PLANAR
PNP POWER TRANSISTOR
2N5333
Semelab Ltd
Semelab LtdSemelab Ltd
Semelab Ltd
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8333
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 1
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
V(BR)CEO
(1)
Collector-Emitter Breakdown
Voltage IC = -30mA IB = 0 -80 V
ICEO Collector Cut-Off Current VCE = -40V IB = 0 -50
VCE = -90V VBE = 0V -10
ICES Collector Cut-Off Current VCE = -50V TC = 150°C -500
VEB = -4V IC = 0 -1.0
IEBO Emitter Cut-Off Current VEB = -6V IC = 0 -100
µA
VCE = -4V IC = -1.0A 30 150
hFE
(1)
Static Forward Current Transfer
Ratio VCE = -4V IC = -2.0A 10
VBE
(1)
Base-Emitter Voltage VCE = -4V IC = -2.0A -1.5
IC = -1.0A IB = -0.1A -0.45
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = -2.0A IB = -0.4A -1.0
V
hfe Small-Signal Common-Emitter
Forward Current Transfer Ratio VCE = -10V, IC = -1.0A, f = 1.0KHz 30
|hfe| Small-Signal Common-Emitter
Forward Current Transfer Ratio VCE = -10V, IC = -1.0A, f = 15MHz
2
SWITCHING CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
ton Turn-On Time IC = -1.0A IB1 = -IB2 = 0.1A 150
toff Turn-Off Time VBE(off) = 3.7V RL = 20Ω 450 ns
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON EPITAXIAL PLANAR
PNP POWER TRANSISTOR
2N5333
Semelab Ltd
Semelab LtdSemelab Ltd
Semelab Ltd
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8333
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 1
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO
-
39
(TO
-
20
5
A
D
)
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
