IRF250P225 - INFINEON TECHNOLOGIES AG

D

S

G

G D S

Gate Drain Source

Applications

 UPS and Inverter applications

 Half-bridge and full-bridge topologies

 Resonant mode power supplies

 DC/DC and AC/DC converters

 OR-ing and redundant power switches

 Brushed and BLDC Motor drive applications

 Battery powered circuits

Benefits

 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dv/dt and di/dt Capability

 Pb-Free ; RoHS Compliant ; Halogen-Free

Base part number Package Type Standard Pack

Form Quantity

IRF250P225 TO-247AC Tube 25 IRF250P225

Orderable Part Number

VDSS 250V

RDS(on) typ. 18m

max 22m

ID 69A



TO-247AC

IRF250P225

G

D

S

D

Final Datasheet Please read the important Notice and Warnings at the end of this document V1.0

www.infineon.com 2017-03-16

IRF250P225

IR MOSFET - StrongIRFET™



Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature

246810 12 14 16 18 20

VGS, Gate -to -Source Voltage (V)

5

15

25

35

45

55

65

75

RDS(on), Drain-to -Source On Resistance (m)

ID = 41A

TJ = 25°C

TJ = 125°C

25 50 75 100 125 150 175

TC , Case Temperature (°C)

0

15

30

45

60

75

ID, Drain Current (A)

Final Datasheet 2 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Table of Contents

Applications …..………………………………………………………………………...……………..……………1

Benefits …..………………………………………………………………………...……………..…………….1

Ordering Table ….……………………………………………………………………………………………………1

Table of Contents ….………………………………………………………………………………………………...2

1 Parameters ………………………………………………………………………………………………3

2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4

3 Electrical characteristics ………………………………………………………………………………5

4 Electrical characteristic diagrams ……………………………………………………………………6

Package Information ………………………………………………………………………………………………14

Qualification Information ……………………………………………………………………………………………15

Revision History …………………………………………………………………………………………..…………16

Final Datasheet 3 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

1 Parameters

Table1 Key performance parameters

Parameter Values Units

VDS 250 V

RDS(on) max  22 m

ID 69 A

Parameters

Final Datasheet 4 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified)

Parameter Symbol Values Unit

Continuous Drain Current ID 69

A

Continuous Drain Current ID 49

Pulsed Drain Current  IDM 276

Maximum Power Dissipation PD 313 W

Linear Derating Factor 2.1 W/°C

Gate-to-Source Voltage VGS ± 20 V

Operating Junction and

Storage Temperature Range

TJ

TSTG -55 to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case) - 300

Mounting Torque, 6-32 or M3 Screw - 10 lbf·in (1.1 N·m) -

Conditions

TC = 25°C, VGS @ 10V

TC = 100°C, VGS @ 10V

TC = 25°C

-

Notes:



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 0.52mH, RG = 50



, IAS = 41A, VGS =10V.



ISD



41A, di/dt



926A/µs, VDD



V(BR)DSS, TJ



175°C.



Pulse width



400µs; duty cycle



2%.



Coss e. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss e. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R



is measured at TJ approximately 90°C.



Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50



, IAS = 31A, VGS =10V.

Table 4 Avalanche characteristics

Parameter Symbol Values Unit

Single Pulse Avalanche Energy  EAS (Thermally limited) 444

mJ 

Single Pulse Avalanche Energy  EAS (Thermally limited) 489

Avalanche Current  IAR

See Fig 16, 17, 23a, 23b

A

Repetitive Avalanche Energy  EAR mJ

Table 3 Thermal characteristics

Parameter Symbol Conditions Typ. Max. Unit

Junction-to-Case  RJC TJ approximately 90°C - 0.48

°C/W Case-to-Sink, Flat Greased Surface RCS - 0.24 -

Junction-to-Ambient RJA - - 40

Min.

-

2 Maximum ratings and thermal characteristics

Maximum ratings and thermal characteristics

Final Datasheet 5 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

D

S

G

Table 6 Dynamic characteristics

Parameter Symbol Conditions Values Unit

Min. Typ. Max.

Forward Trans conductance gfs VDS = 50V, ID =41A 72 - - S

Total Gate Charge Qg - 64 96

nC

Gate-to-Source Charge Qgs - 24 -

Gate-to-Drain Charge Qgd - 12 -

Total Gate Charge Sync. (Qg– Qgd) Qsync - 52 -

Turn-On Delay Time td(on) VDD = 163V - 17 -

ns

Rise Time tr ID = 41A - 54 -

Turn-O Delay Time td(o) RG = 2.7 - 52 -

Fall Time tf VGS = 10V  - 36 -

Input Capacitance Ciss VGS = 0V - 4897 -

pF

Output Capacitance Coss VDS = 50V - 505 -

Reverse Transfer Capacitance Crss ƒ = 1.0MHz, See Fig.7 - 6.1 -

Eective Output Capacitance

(Energy Related) Coss e.(ER) VGS = 0V, VDS = 0V to 200V  - 372 -

Output Capacitance (Time Related) Coss e.(TR) VGS = 0V, VDS = 0V to 200V  - 607 -

ID = 41A

VDS = 125V

VGS = 10V

Table 7 Reverse Diode

Parameter Symbol Conditions Values Unit

Min. Typ. Max.

Continuous Source Current IS MOSFET symbol - - 69

A

(Body Diode) showing the

Pulsed Source Current integral reverse - - 276

(Body Diode)  p-n junction diode.

Diode Forward Voltage VSD TJ = 25°C, IS = 41A,VGS = 0V  - - 1.2 V

Peak Diode Recovery dv/dt  dv/dt TJ = 175°C, IS = 41A,VDS = 250V - 25 - V/ns

Reverse Recovery Time trr

TJ = 25°C - 113 - ns

TJ = 125°C - 155 -

Reverse Recovery Charge Qrr

TJ = 25°C - 427 - nC

TJ = 125°C - 878 -

Reverse Recovery Current IRRM TJ = 25°C - 5.7 - A

ISM

VDD = 213V

IF = 41A,

di/dt = 100A/µs 

Table 5 Static characteristics

Parameter Symbol Conditions Values Unit

Min. Typ. Max.

Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 250 - - V

Breakdown Voltage Temp. Coeicient V(BR)DSS/TJ Reference to 25°C, ID = 2.5mA  - 0.17 - V/°C

Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 41A - 18 22 m

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 270µA 2.0 - 4.0 V

Drain-to-Source Leakage Current IDSS VDS =200V, VGS =0V - - 1.0 µA

VDS =200V,VGS = 0V,TJ =125°C - - 100

Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA 

Gate Resistance RG

- 2.7 - 

3 Electrical characteristics

Electrical characteristics

Final Datasheet 6 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Electrical characteristic diagrams

4 Electrical characteristic diagrams

Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics

Figure 5 Typical Transfer Characteristics Figure 6 Normalized On-Resistance vs. Temperature



0.1 110 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

ID, Drain-to-Source Current (A)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

60µs PULSE WIDTH

Tj = 25°C

4.5V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

ID, Drain-to-Source Current (A)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

60µs PULSE WIDTH

Tj = 175°C

4.5V

2345678

VGS, Gate-to-Source Voltage (V)

0.10

1.0

10

100

1000

ID, Drain-to-Source Current (A)

TJ = 25°C

TJ = 175°C

VDS = 50V

60µs PULSE WIDTH

-60 -20 20 60 100 140 180

TJ , Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 41A

VGS = 10V

Final Datasheet 7 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Electrical characteristic diagrams

Figure 7 Typical Capacitance vs. Drain-to-Source

Voltage

Figure 8 Typical Gate Charge vs. Gate-to-Source

Voltage

Figure 9 Typical Source-Drain Diode Forward

Voltage



110 100 1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

10000

100000

1000000

C, Capacitance (pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = C gd

Coss = Cds + Cgd

Coss

Crss

Ciss

0 102030405060708090100

QG, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

VGS, Gate-to-Source Voltage (V)

ID= 41A

VDS= 200V

VDS= 125V

VDS= 50V

0.0 0.4 0.8 1.2 1.6 2.0

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

Final Datasheet 8 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Electrical characteristic diagrams

Figure 11 Drain-to-Source Breakdown Voltage Figure 12 Typical Coss Stored Energy



-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Temperature ( °C )

240

250

260

270

280

290

300

V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

Id = 2.5mA

0 25 50 75 100 125 150 175 200 225 250 275

VDS, Drain-to-Source Voltage (V)

0

2

4

6

8

10

12

Energy (µJ)

Figure 10 Maximum Safe Operating Area



0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

DC

Final Datasheet 9 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Electrical characteristic diagrams

Figure 15 Maximum Eective Transient Thermal Impedance, Junction-to-Case



1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

Thermal Response ( Z thJC ) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Figure 13 Typical On-Resistance vs. Drain

Current



Figure 14 Threshold Voltage vs. Temperature

025 50 75 100 125 150 175 200

ID, Drain Current (A)

10

20

30

40

50

60

RDS(on), Drain-to -Source On Resistance (m)

VGS = 5.5V

VGS = 6.0V

VGS = 7.0V

VGS = 8.0V

VGS = 10V

-75 -50 -25 025 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS(th), Gate threshold Voltage (V)

ID = 270µA

ID = 1.0mA

ID = 1.0A

Final Datasheet 10 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225



Electrical characteristic diagrams

Figure 17 Maximum Avalanche Energy vs.

Temperature

Notes on Repetitive Avalanche Curves , Figures 16, 17:

(For further info, see AN-1005 at www.infineon.com)

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not

exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 23a, 23b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. Iav = Allowable avalanche current.

7. DT = Allowable rise in junction temperature, not to exceed Tjmax

(assumed as 25°C in Figure 15, 16).

t

av = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

Z

thJC(D, tav) = Transient thermal resistance, see Figures 14)

PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC

I

av = 2T/ [1.3·BV·Zth]

E

AS (AR) = PD (ave)·tav

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 1.0% Duty Cycle

ID = 41A

Figure 16 Avalanche Current vs. Pulse Width



1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

1

10

100

Avalanche Current (A)

Allowed avalanche Current vs

avalanche pulsewidth, tav, assuming

Tj = 25°C and Tstart = 150°C.

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

Final Datasheet 11 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Electrical characteristic diagrams

Figure 20 Typical Stored Charge vs. dif/dt Figure 21 Typical Stored Charge vs. dif/dt



100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

500

1000

1500

2000

2500

3000

QRR (nC)

IF = 28A

VR = 213V

TJ = 25°C

TJ = 125°C

100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

500

1000

1500

2000

2500

3000

3500

QRR (nC)

IF = 41A

VR = 213V

TJ = 25°C

TJ = 125°C

Figure 18 Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt



100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

10

20

30

40

50

60

IRRM (A)

IF = 41A

VR = 213V

TJ = 25°C

TJ = 125°C

100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

10

20

30

40

50

60

IRRM (A)

IF = 41A

VR = 213V

TJ = 25°C

TJ = 125°C

Final Datasheet 12 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Electrical characteristic diagrams

Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs

Figure 23a Unclamped Inductive Test Circuit



Figure 23b Unclamped Inductive Waveforms

Final Datasheet 13 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Electrical characteristic diagrams

Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms



Figure 25a Gate Charge Test Circuit Figure 25b Gate Charge Waveform



Final Datasheet 14 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

TO-247AC Package Outline (Dimensions are shown in millimeters (inches))

TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Part Marking Information

YEAR 1 = 2001

DATE CODE

PART NUMBER

INTERNATIONAL

LOGO

RECTIFIER

ASSEMBLY

56 57

IRFPE30

135H

LINE H

indicates "Lead-Free" WEEK 35

LOT CODE

IN THE ASSEMBLY LINE "H"

ASSEMBLED ON WW 35, 2001

Note: "P" in assembly line position

EXAMPLE:

WITH ASSEMBLY

THIS IS AN IRFPE30

LOT CODE 5657

Package Information

5 Package Information

Final Datasheet 15 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

† Applicable version of JEDEC standard at the time of product release.

Qualification Information

Qualification Level Industrial

(per JEDEC JESD47F) †

Moisture Sensitivity Level TO-247AC N/A

RoHS Compliant Yes

Qualification Information

6 Qualification Information

Final Datasheet 16 V1.0

2017-03-16

IR MOSFET-StrongIRFET™

IRF250P225

Revision History

Major changes since the last revision

Page or Reference Revision Date Description of changes

All pages 1.0 2017-03-16  First release data sheet.

Trademarks of Infineon Technologies AG

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,

DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,

HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,

OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,

SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™

Trademarks updated November 2015

Other Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement of

intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and standards

concerning customer’s products and any use of the

product of Infineon Technologies in customer’s

applications.

The data contained in this document is exclusively

intended for technically trained sta. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies oice

(www.infineon.com).

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oice.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

Edition 2015-05-06

Published by

Infineon Technologies AG

81726 Munich, Germany



Do you have a question about this

document?

Email: erratum@infineon.com

Document reference