MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# S9012 Features * * * * * * TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9012 Pin Configuration Bottom View C B PNP Silicon Transistors TO-92 E A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 40 --- Vdc 25 --- Vdc 5.0 --- Vdc --- 0.1 uAdc OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) B C --- 0.2 uAdc --- 0.1 uAdc 64 300 --- 40 --- --- --- 0.6 Vdc --- 1.2 Vdc --- 1.4 Vdc ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB DC Current Gain (IC=50mAdc, V CE=1.0Vdc) DC Current Gain (IC=500mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base- Emitter Voltage (IE =100mAdc) D G DIMENSIONS SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) 150 --- MHz CLASSIFICATION OF HFE (1) Rank Range D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 I 190-300 DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE