ee FAIRCHILD ee SEMICONDUCTOR m BS170 / MMBF170 April 1995 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features High density cell design for low Rogon)- Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. S. T0-92 (97) SOT-23 wo Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol | Parameter BS170 MMBF170 Units Voss Drain-Source Voltage Voar Drain-Gate Voltage (Rag < 1MQ) Vass Gate-Source Voltage lp Drain Current - Continuous 500 500 mA - Pulsed 1200 800 Py Maximum Power Dissipation 830 300 mW Derate Above 25C 66 24 mWw/C Ty Tete Operating and Storage Temperature Range -55 to 150 C T, Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 C THERMAL CHARACTERISTICS R, Thermal Resistacne, Junction-to-Ambient QA 150 417 C/W 1997 Fairchild Semiconductor Corporation BS170 Rev. C / MMBF170 Rev. D Electrical Characteristics (T, = 25C unless otherwise noted) Symbol | Parameter Conditions Type | Min | Typ | Max | Units OFF CHARACTERISTICS BV ogg Drain-Source Breakdown Voltage Veg = OV, |p= 100 pA All 60 Vv logs Zero Gate Voltage Drain Current Vo = 25 V, Veg= OV All 0.5 HA laser Gate - Body Leakage, Forward Veg = 15 V, Vog = OV All 10 nA ON CHARACTERISTICS (note 1) Vesey Gate Threshold Voltage Vos = Veg: |p = 1 mA All 0.8 2.1 3 Vv Rogon) Static Drain-Source On-Resistance Veg = 10 V, 1), = 200 mA All 1.2 Q Ors Forward Transconductance Vp. = 10 V, |, = 200 mA BS170 320 mS Vos 2 2 Vogeny Ip = 200 mA MMBF170 320 DYNAMIC CHARACTERISTICS Co. Input Capacitance Vpg = 10V, Veg = OV, All 24 40 pF C.., Output Capacitance f=1.0MHz All 17 | 30 | pF C,.. Reverse Transfer Capacitance All 7 10 pF SWITCHING CHARACTERISTICS (ote 1) ty Turn-On Time Vpp = 25 V, |, =200mA, BS170 10 ns Veg = 10 V, Ragy = 25 Q Vop = 25 V, |, =500 mA, MMBF170 10 Veg = 10 V, Raggy = 50 Q toe Turn-Off Time Vpp = 25 V, |, =200mA, BS170 10 ns Veg = 10 V, Ragy = 25 Q Vop = 25 V, |, =500 mA, MMBF170 10 Veg = 10 V, Raggy = 50 Q Note: 1. Pulse Test: Pulse Width < 300ys, Duty Cycle < 2.0%. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics BS170 / MMBF170 a Rpsyon) NORMALIZED DRAIN-SOURCE ON-RESISTANCE | D DRAIN-SOURCE CURRENT (A) S a 0 1 2 3 4 5 Vpg DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. I I V gg = 10V 4 9 1.75 } Ip = 500mA 4 Ww = Zz ar a << HY 15 A i au ea a 4 =o 3 5 1.25 Z| cz Zw LL 2 Ze z9 oS | 3F Bo BO a8 oa cz y 2 = z 0.75 < 8 a a 0.5 -50 -25 0 25 50 75 100 125 150 7, _ JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 2 T T y= -55C 4 Vos = 10V 25C nog w g 1.6 Th z 8 < J / az k ua mq 1.2 No i a 3 cy o Z 0.8 ly Ze wWw 5 $3 ~ 2 0.4 3 ; ip wl t o 0 L L L L 0 2 4 6 8 10 Vas GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. nD a ND a 0.5 0.8 1.2 Ip , DRAIN CURRENT (A) 1.6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. nD a Ty = 125C ND a o a 0.8 Ip, DRAIN CURRENT (A) 1.2 1.6 2 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.05 mY Vos=Ves | , ~ Ip =1mA 1 0.95 NR 0.9 N oN 0.85 ~ 0.8 50-25 0 25 50 75 100 125 150 Ty , JUNCTION TEMPERATURE (C) Figure 6. Gate Threshold Variation with Temperature. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics (continued) BS170 / MMBF170 1.075 1.05 1.025 , NORMALIZED oss BV DRAIN-SOURCE BREAKDOWN VOLTAGE 0.975 0.95 0.925 -50 -25 0 25 50 75 100 125 150 Ty , JUNCTION TEMPERATURE (C) Figure 7. Breakdown Voltage Variation with Temperature. CAPACITANCE (pF) 1 2 3 5 10 20 30 50 Vpg_ DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. VIN Ry, Ves Ren (JL) ow 45 ~ Vout Figure 11. Switching Test Circuit. oom eo aA - 0.01 0.005 Ig, REVERSE DRAIN CURRENT (A) 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 Vsp . BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Ip =500mA Sf 0 0.4 0.8 1.2 1.6 2 Qg , GATE CHARGE (nC) Vag GATE-SOURCE VOLTAGE (V) Figure 10. Gate Charge Characteristics. ton | t don) <tr td(ot) f90% Output, Vout S00 A 90% Inverted Input, Vin 10% Figure 12. Switching Waveforms. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics (continued) < 2 Wu c c 2 Oo Zz & a Vg = 10V 2 SINGLE PULSE Ty = 25C 0.005 1 2 5 10 20 30 60 80 Vos , DRAIN-SOURCE VOLTAGE (V) Figure 13. BS170 Maximum Safe Operating Area. Ww 9 Se 5 Ww i Ww a Oz us So =z uu si ee ob =4 eg < Single Pulse fe 0.01 0.0001 0.001 0.01 0.1 Ip, DRAIN CURRENT (A) 0.5 01 0.05 Ves = 10V SINGLE PULSE 9.01 Ta = 25C 0.005 1 2 5 10 20 30 60 80 Vps , DRAIN-SOURCE VOLTAGE (V) Figure 14. MMBF170 Maximum Safe Operating Area. Resa =r) Rosa Roya = (See Datasheet) P(pk) pe ty te", + Ty: Ty =P * Roya (t) Duty Cycle, D =t, Mp 100 300 ty, TIME (sec) Figure 15. TO-92, BS170 Transient Thermal Response Curve. 0.5 0.2 0.1 0.05 0.01 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.002 001 0. 0.0001 0.001 0.01 0.1 Resa =r) Rosa Roya = (See Datasheet) P(pk) pet ty i tp Ty: Ty =P * Roya (t) Duty Cycle, D =t, Mp 100 300 ty, TIME (sec) Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve. BS170 Rev. C / MMBF170 Rev. D