SPP07N60CFD
CoolMOSTM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv/dtrated
• High peak current capability
• Qualified for industrial grade applications according to JEDEC1)
CoolMOS CFD designed for:
• Soft switching PWM Stages
• LCD & CRT TV
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=3.3 A, VDD=50 V 230 mJ
Avalanche energy, repetitive2),3) EAR ID=6.6 A, VDD=50 V
Avalanche current, repetitive2),3) IAR A
Drain source voltage slope dv/dtID=6.6 A, VDS=480 V,
Tj=125°C V/ns
Reverse diode dv/dtdv/dtV/ns
Maximum diode commutation speed di/dtA/µs
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj,Tstg °C
Mounting torque M3 & M3.5 screws 60 Ncm
600
6.6
80
IS=6.6 A, VDS=480 V,
Tj=125 °C
±20
±30
83
-55 ... 150
0.5
40
Value
6.6
4.3
17
VDS @Tjmax 650 V
RDS(on),max 0.7 "
ID6.6 A
Product Summary
Type Package Marking
SPP07N60CFD PG-TO220 07N60CFD
PG-TO220
Rev. 1.4 page 1 2009-11-27
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SPP07N60CFD
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.5 K/W
RthJA leaded - - 62
Soldering temperature, wave
soldering only allowed at leads Tsold 1.6 mm (0.063 in.)
from case for 10 s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 600 - - V
Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=6.6 A - 700 -
Gate threshold voltage VGS(th) VDS=VGS,ID=300 µA 345
Zero gate voltage drain current IDSS VDS=600 V, VGS=0 V,
Tj=25 °C - 0.6 - µA
VDS=600 V, VGS=0 V,
Tj=150 °C - 630 -
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=4.6 A,
Tj=25 °C - 0.59 0.7 "
VGS=10 V, ID=4.6 A,
Tj=150 °C - 1.6 -
Gate resistance RGf=1 MHz, open drain - 1.2 -
Transconductance gfs |VDS|>2|ID|RDS(on)max,
ID=4.6 A - 5.0 - S
Values
Thermal resistance, junction -
ambient
Rev. 1.4 page 2 2009-11-27
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SPP07N60CFD
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 790 - pF
Output capacitance Coss - 260 -
Reverse transfer capacitance Crss - 16 -
Effective output capacitance, energy
related4) Co(er) - 30 -
Effective output capacitance, time
related5) Co(tr) - 55 -
Turn-on delay time td(on) - 12 - ns
Rise time tr- 25 -
Turn-off delay time td(off) - 36 -
Fall time tf- 9 -
Gate Charge Characteristics
Gate to source charge Qgs - 6.6 - nC
Gate to drain charge Qgd - 20 -
Gate charge total Qg- 35 47
Gate plateau voltage Vplateau - 7.2 - V
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2) Pulse width tplimited by Tj,max
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=400 V,
VGS=10 V, ID=6.6 A,
RG=6.8 "
VDD=480 V, ID=6.6A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
1) J-STD20 and JESD22
Rev. 1.4 page 3 2009-11-27
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SPP07N60CFD
Parameter Symbol Conditions Unit
min. typ. max.
Reverse Diode
Diode continuous forward current IS- - 6.6 A
Diode pulse current2) IS,pulse - - 17
Diode forward voltage VSD VGS=0 V, IF=IS,
Tj=25 °C - 1.0 1.2 V
Reverse recovery time trr - 104 200 ns
Reverse recovery charge Qrr - 0.5 1.42 µC
Peak reverse recovery current Irrm - 8 - A
Peak rate of fall of reverse recovery
current dirr /dt Tj=25 °C - 1000 - A/µs
VR=480 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
Rev. 1.4 page 4 2009-11-27
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SPP07N60CFD
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C
parameter: D=tp/Tparameter: VGS
0
10
20
30
40
50
60
70
80
90
0 40 80 120 160
TC[°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
102
101
100
10-1
VDS [V]
ID[A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp[s]
ZthJC [K/W]
5 V 5.5 V
6 V
6.5 V
7 V
8 V
10 V
20 V
0
5
10
15
20
0 5 10 15 20
VDS [V]
ID[A]
limited by on-state
resistance
Rev. 1.4 page 5 2009-11-27
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SPP07N60CFD
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=4.6 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [ ]
25 °C
150 °C
0
4
8
12
16
20
24
0 4 8 12 16 20
VGS [V]
ID[A]
5 V
5.5 V
6 V
6.5 V
7 V
8 V
10 V
20 V
0
2
4
6
8
10
12
0 5 10 15 20
VDS [V]
ID[A]
5 V 5.5 V 6 V
6.5 V 7 V
10 V
20 V
1.2
1.6
2
2.4
2.8
0 2 4 6 8
ID[A]
RDS(on) [ ]
Rev. 1.4 page 6 2009-11-27
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SPP07N60CFD
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=6.6 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
11 Avalanche SOA 12 Avalanche energy
IAR=f(tAR)EAS=f(Tj); ID=3.3 A; VDD=50 V
parameter: Tj(start)
0
50
100
150
200
250
25 50 75 100 125 150 175
Tj[°C]
EAS [mJ]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF[A]
125 °C 25 °C
104
103
102
101
100
10-1
10-2
10-3
0
1
2
3
4
5
6
7
tAR [µs]
IAV [A]
120 V
480 V
0
2
4
6
8
10
0 5 10 15 20 25 30
Qgate [nC]
VGS [V]
Rev. 1.4 page 7 2009-11-27
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SPP07N60CFD
13 Drain-source breakdown voltage 14 Typ. capacitances
VBR(DSS)=f(Tj); C=f(VDS); VGS=0 V; f=1 MHz
15 Typ. Coss stored energy 16 Typ. reverse recovery charge
Eoss=f(VDS) Qrr=f(Tj);parameter: ID=6.6 A
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
Ciss
Coss
Crss
104
103
102
101
100
0 100 200 300 400 500
VDS [V]
C[pF]
0
1
2
3
4
5
6
0 100 200 300 400 500 600
VDS [V]
Eoss [µJ]
0.5
0.55
0.6
0.65
0.7
25 50 75 100 125
Tj[°C]
Qrr [µC]
Rev. 1.4 page 8 2009-11-27
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SPP07N60CFD
17 Typ. reverse recovery charge 18 Typ. reverse recovery charge
Qrr=f(IS); parameter: di/dt=100 A/µs Qrr=f(di/dt); parameter: ID=6.6 A
25 °C
125 °C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
23456
IS[A]
Qrr [µC]
25 °C
125 °C
0.5
0.6
0.7
0.8
0.9
1
1.1
100 300 500 700 900
di/dt [A/µs]
Qrr [µC]
Rev. 1.4 page 9 2009-11-27
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SPP07N60CFD
Definition of diode switching characteristics
Rev. 1.4 page 10 2009-11-27
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SPP07N60CFD
PG-TO-220-3-1; -3-21
Dimensions in mm/ inches
Rev. 1.4 page 11 2009-11-27
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SPP07N60CFD
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Rev. 1.4 page 12 2009-11-27
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