NTE2390 MOSFET N-Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged - SOA is Power Dissipation Limited D Source-to-Drain Diode Characterized for Use With Inductive Loads D G S Absolute Maximum Ratings: Drain-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain-Gate Voltage (RGS = 1M+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -655 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -655 to +1505C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.675C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 305C/W Maximum Lead Temperature (During soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2755C Rev. 10-13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 - - V VGS = 0, VDS = Max Rating - - 0.2 mA VGS = 0, VDS = 48V, TJ = +1255C - - 1.0 mA OFF Characteristics Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS ID = 0.25mA, VGS = 0 IDSS Gate-Body Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V - - 100 nA Gate-Body Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V - - 100 nA VGS(th) VDS = VGS, ID = 1mA 2.0 - 4.5 V VDS = VGS, ID = 1mA, TJ = +1005C 1.5 - 4.0 V ON Characteristics (Note 1) Gate Threshold Voltage Static Drain-Source On Resistance rDS(on) VGS = 10V, ID = 6A - - 0.2 + Drain-Source ON-Voltage VDS(on) VGS = 10V, ID = 12A - - 3.0 V VGS = 10V, ID = 6A, TJ = 1005C - - 2.8 V gfs VDS = 15V, ID = 6A 4 - - mhos Input Capacitance Ciss - - 400 pf Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz - - 300 pf Reverse Transfer Capacitance Crss - - 100 pf - - 60 ns - - 160 ns td(off) - - 80 ns tf - - 110 ns - 13 26 nC - 6 - nC - 7 - nC - 1.8 3.2 V Forward Transconductance Dynamic Characteristics Switching Characteristics (TJ = +1005C, Note 1) Turn-On Time Rise Time Turn-Off Delay Time Fall Time td(on) tr Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 25V, ID = 0.5 Rated ID, Rgen = 50+ VDS = 48V, VGS = 10V, ID = Rated ID Source Drain Diode Characteristics (Note 1) Forward ON Voltage VSD IS = Rated ID, VGS = 0 Forward Turn-On Time ton Limited by stray inductance Reverse Recovery Time trr - 300 - ns Measured from the contact screw on tab to center of die - 3.5 - nH Measured from the drain lead 0.25" from package to center of die - 4.5 - nH Measured from the source lead 0.25" from package to source bond pad - 7.5 - nH Internal Package Inductance Internal Drain Inductance Internal Source Inductance Ld Ls Note 1. Pulse test: Pulse width 3 3003s, Duty cycle 3 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab