G
S
D
NTE2390
MOSFET
N−Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2390 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
DSilicon Gate for Fast Switching Speeds
DIDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures.
DRugged − SOA is Power Dissipation Limited
DSource−to−Drain Diode Characterized for Use With Inductive Loads
Absolute Maximum Ratings:
Drain−Source Voltage, VDSS 60V.........................................................
Drain−Gate Voltage (RGS = 1M+), VDGR 60V..............................................
Gate−Source Voltage, VGS +20V.........................................................
Drain Current, ID
Continuous 12A..................................................................
Pulsed 30A......................................................................
Total Power Dissipation (TC = +255C), PD75W............................................
Derate Above 255C 0.6W/5C.......................................................
Operating Junction Temperature Range, TJ−655 to +1505C..................................
Storage Temperature Range, Tstg −655 to +1505C..........................................
Maximum Thermal Resistance, Junction−to−Case, RthJC 1.675C/W...........................
Maximum Thermal Resistance, Junction−to−Ambient, RthJA 305C/W.........................
Maximum Lead Temperature (During soldering), TL+2755C..................................
Rev. 10−13
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain−Source Breakdown Voltage V(BR)DSS ID = 0.25mA, VGS = 0 60 − − V
Zero−Gate Voltage Drain Current IDSS VGS = 0, VDS = Max Rating − − 0.2 mA
VGS = 0, VDS = 48V, TJ = +1255C− − 1.0 mA
Gate−Body Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V − − 100 nA
Gate−Body Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V − − 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1mA 2.0 −4.5 V
VDS = VGS, ID = 1mA, TJ = +1005C 1.5 −4.0 V
Static Drain−Source On Resistance rDS(on) VGS = 10V, ID = 6A − − 0.2 +
Drain−Source ON−Voltage VDS(on) VGS = 10V, ID = 12A − − 3.0 V
VGS = 10V, ID = 6A, TJ = 1005C−−2.8 V
Forward Transconductance gfs VDS = 15V, ID = 6A 4− − mhos
Dynamic Characteristics
Input Capacitance Ciss VDS = 25V, VGS = 0,
f = 1MHz
− − 400 pf
Output Capacitance Coss − − 300 pf
Reverse Transfer Capacitance Crss − − 100 pf
Switching Characteristics (TJ = +1005C, Note 1)
Turn−On Time td(on) VDD = 25V, ID = 0.5 Rated ID,
Rgen = 50+
− − 60 ns
Rise Time tr− − 160 ns
Turn−Off Delay Time td(off) − − 80 ns
Fall Time tf− − 110 ns
Total Gate Charge QgVDS = 48V, VGS = 10V,
ID = Rated ID
−13 26 nC
Gate−Source Charge Qgs −6−nC
Gate−Drain Charge Qgd −7−nC
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage VSD IS = Rated ID, VGS = 0 −1.8 3.2 V
Forward Turn−On Time ton Limited by stray inductance
Reverse Recovery Time trr −300 −ns
Internal Package Inductance
Internal Drain Inductance LdMeasured from the contact screw
on tab to center of die
−3.5 −nH
Measured from the drain lead 0.25”
from package to center of die
−4.5 −nH
Internal Source Inductance LsMeasured from the source lead
0.25” from package to source bond
pad
−7.5 −nH
Note 1. Pulse test: Pulse width 3 3003s, Duty cycle 3 2%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
