ELANTEC INC eae D Features * 500 V/s slew rate 70 MHz bandwidth * 10120 input impedance 5 mV max, input offset voltage FET input Offset nulls with single pot No compensation required for gains above 50 * Peak output current to 100 mA MIL-STD-883 devices 100% manufactured in U.S.A. Ordering Information Part No. Temp. Range Pkg. Outline# ELH0032CG 25C to +85C TO-8 MDP0002 ELH0032G 55C to + 125C TO-8 MDP0002 ELH0032G/883B ~55C to + 125C TO-8 MDP0002 8001301Z2K is the DESC version of this device. Connection Diagram OUTPUT COMPENSATION 0042-1 Top View Case is electrically isolated. Manufactured under U.S, Patent No. 4,746,877 General Description The ELH0032/ELH0032C is a high slew rate, high input im- pedance differential operational amplifier suitable for diverse application in fast signal handling. The high allowable differen- tial input voltage, ease of output clamping, and high output drive capability make the ELH0032/HLH0032C particularly suitable for comparator applications. It may be used in applica- tions normally reserved for video amplifiers allowing the use of operational gain setting and frequency response shaping into the megahertz region. The ELH0032s wide bandwidth, high input impedance and high output drive capability make it an ideal choice for applica- tions such as summing amplifiers in high-speed D to As, buff- ers in data acquisition systems, and sample and hold circuits. Additional applications include high-speed integrators and vid- eo amplifiers, The ELH0032 is guaranteed over the temperature range 55C to + 125C and the ELH0032C is guaranteed from 25C to + 85C, Elantec facilities comply with MIL-I-45208A and other applica- ble quality specifications. Elantecs Military devices are 100% fabricated and assembled in our rigidly controlled, ultra-clean facilities in Milpitas, California. For additional information on Elantecs Quality and Reliability Assurance policy and proce- dures request brochure QRA-1. Simplified Schematic 2 Vt Oo z 4 3 pA Sa ona BALANCE COMPENSATION } 4 03 : * 2 5 ourPuT INVERT tas as COMPENSATION at | a2 boi NON-INVERT o& _ 5 INPUT Sas rs a7 > 2 1 }K a a *> { sre nacuTrut : a2 ae Sa K ato 10 3" cR2 v- 0 + 0092-2 1-45 Me 3129557 OO00?ce 7 Mm ~ ELH0032/ELH0032C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS. Fast Operational Amplifier ISG Ss ee 02800H TH /2800H 1a a Aoy 0661 ArenueeELANTEC INC 2e D me 31209557 go007c3 1 Test Level <28 me o 8) ELH0032/ELH0032C 3 iL Fast Operational Amplifier al a - & | Absolute Maximum Ratings = Vs Supply Voltage 18V Ta VIN Input Voltage 415 Vg a Differential Input Voltage 30V or 2Vs Pp Power Dissipation (Note 1) Ty Ta = 25C = 1.5W, derate 100C/W to + 125C Tsp Ta = 25C 2.2W, derate 70C/W to + 125C Important Note: Test Procedure : 100% production tested and QA: sample tested per OA. test plan OCX0002, 100% production tested at Ta, =:25C and QA sample tested at Ta = aC, Trax and Tag per QA test plan QCXO0O2, QA sample tested per QA test plan QCX0002: . : Parameter is guaranteed (but not tested) by Design and Cliaracterization Data, Parameter is typical value at T4 = 25C for information purposes only. Operating Temperature Range: ELH0032 ELH0032C Operating Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) DC Electrical Characteristics vs = 15V, Tray < Ta < Tux: Vin = OV 55C to + 125C 25C to + 85C 175C 65C to + 150C 300C All parameters having Min/Max specifications are guaranteed. The Test Level column indicates. the specific device testing actually performed during production and Qualtfy inspection. Elantec performs most electrical tests using modern high-speed automatic test . equipment, specifically the LTX77 Series system. Unless otherwise noted, all testa are e pulsed testa, therefore Ty=Te= Tas: . : ELH0082 ELH0032C Parameter Description Test Conditions Test. Test. | Units yP| Max Level yP| Max Level Vos Input Offset Voltage | Ty = 25C (Note 2) 215 L- 2 | 15 [ore] mv wl. 20 | iE] mv AVos/AT | Average Offset ee . Voltage Drift 25 | 150 | -E 25 Vv ipvec los Input Offset Current | Ty = 25C (Note 2) 2 | so | 1..| pA Ta = 28C (Note 3) aso | Iv 500 |.I- | pA Ty = Max 25 r 5 TIE nA Ip Input Bias Current |Ty = 25C (Note 2) 100 I 500 Ir pA Ta = 25C (Note 3) 1 Iv 5 fF IV nA Ty = Tmax 50 t 15 | +] nA Vincm Tnput Voltage Range 10] 12 I 10] 12 i Vv CMRR Common-Made Vin = 10V - Rejection Ratio 50 | 60 1] 50 | 60 . ve dB AvyoL Open-Loop Vo = 10V, Ry = 1k0, Ty = 25C} 48 | 60 L 48 | 60 I: dB Voltage Gain Vo = 10V, Ry = 1k2 45 Lol 48 ME | dB Vo = 10V, f = 1kHz, we Rp = 1k0, Ty = 25C 60 | 70 i=} 60 | 70 r : dB Vo = #10V,f = 1kHz, Ry =1kQ] 57 .-| 37 tH | dB 1-46ELANTEC INC 24 D M@ 3129557 0000724 0 mm -ELH0032/ELH0032C 1-79-15 Fast Operational Amplifier DC Electrical Characteristics vs = 15v, Ty < Ta < TuAx: Vin = 0V Contd. ELH0032 ELH0032C Parameter] Description Test Conditions Neat Peg | Units Min| Typ | M: ,| Min | Typ | Max ax Level Level Vo Output Voltage Swing] Ry, = 1&2 10| 413.5 Es] 10] 413 Sar | ov Ig Power Supply Current | Ty = 25C, Ig = OmA - 21 23 I 23 | 25 ES] mA T, = 25C, Ig = 0 mA (Note 3) 1s | 20 fe Tee 20 | 22 biave-| mA PSRR Power Supply 5V < Vs < 15V so | 60 X=] 50 | 60 IL<] dB Rejection Ratio +5V < Va(+) < + 20, 50 Y 50 : ie | os Vs() = 15V are : 5V = Ve() 2 20V, : ey Ve(+) = +18V 0 F| 80 iw qB AC Electrical Characteristics vs = 15v, Ry = 1&0, Ty = 25C : : Test : Parameter Description Test Conditions Min | Typ | Max [ Level Units SR Slew Rate | Ay = +1,AVin = 20V | 350 | 500 POE V/ps ts Settling Time to 1% of Final Value | Ay = 1,AVpy = 20V too | 300 |: 3V-0] ns ts Settling Time to 0.1% of Final Value | Ay = 1,AViny = 20V 300 Wee ns tr Small Signal Rise Time Ay = +1, AVyy = 1V 8 20 iz ns tp Smail Signal Delay Time Ay = +1, AV = 1V 10 25 Es ns Note 1; In order to limit maximum junction temperature to + 175C, it may be necessary to operate with Vg < +15V when T, or Tc exceeds specific values depending on the Pp within the device package. Total Pp is the sum of quiescent and load-related dissipation. Note 2: Specification is at 25C junction temperature due to requirements of high-speed automatic testing, Actual values at operating temperature will exceed the value at Ty = 25C. When supply voltage are +15V, no-load operating junction temperature may rise 40C-60C above ambient and more under load conditions. Accordingly, Vog may charge one to several mV, and Ip and Ios will change significantly during warm-up. Refer to Ig and Igg vs temperature graph for expected values. Note 3: Measured in still air 7 minutes after application of power, 1-47 O800H TH 6800H 14ELH0032/ ELH0032C ELANTEC INC coe >) = aheass? ooogres e a Fast Operational Amplific ier ae me Clee Cas OO Typical Performance Curves Input Voltage Range Maximum Power Supply Current vs and Output Voltage Dissipation Supply Voltage va Supply Voltage 25 24 ge 2@ETA= = 20 g 0 < 2 5 To= +25C 2 : 18 @ 18 5 3 16 = & er en a TA= +126C 8 3 0s 3 2 = 0 2 80 75 10 125 150 ar 10 1s. 20 0 5 0 & 2 TEMPERATURE(C) SUPPLY VOLTAGE (=\) SUPPLY VOLTAGE (2V) Bode Plot Bode Plot (Unity , Large Signal to (Uncompensated) to Gain Compensation) Frequency Response [Ves sv [Wee sev] COM T_T HH SSE ii: ll Hi i ti imi 5 RT a ote TT, 2 3 @ I | Pri TL LITT 3 6 cH 4 3 6 z o oo UTI LUN = CHS a Rog ST UMM IM, 2B OS HT TT LN 3 ATS ata 3 3 AUN Bill! lililh: 3 2 Uiav= +18 Vill o i 238 9 4 m 2 8 UI Timeout Nill oo 2 8 rN TUM Tease liilll o 8 2 ta cH A wi 5 HECHT TENE m@ & TE wh oF Ve= 215 1 g 2 ry? & Bh BoE R i Ti HN i 270 LAN Ti TT 3 WPioaasciiit Tt 3 COC CUE CN CEE tt Null STMT rte AA 10k 100k 1M 10M 100M 10k 100k 41M 10M 100M 80 100 iM 10M 100M FREQUENCY (Hz) FREQUENCY (Hz) FREQUENCY (Hz) 0032-3 1-48ELANTEC INC 24 D M@ 3129557 GOo0O7eb 4 Ma ei _ ELH 0032/ELH0032C |= - Fast Operational. Amplifier. 3 \ T-79~15 : E Typical Performance Curves Contd. Fri S Common Mode 8 a Rejection Ratio Large Signal - Large Signal QO $ vs Frequency Pulse Response Pulse Response e on 7 vee nib ouby Z CT | s* y= $1 Ay= +0 z Co Be | 2 =1k = =1k 2 ; We 45 a +5 5 = z- wu 4 4 Z go g a 5 5 a -5 a -5 = > 2 2 5 3 2 -10 -10 5 0 100 200 20 400 500 0 100 200 30 400 500 FREQUENCY (Hz) TIME (ns} TIME (ns) i Normalized Input Bias and Offset Current Normalized Input Bias Input Bias Current g ve Junction Temperature @ 100 Current During Warm-Up va Input Voltage a 04 w 2 z : z i & + 5 5 & 13 iG = ee Be 5 gc 3 c7 wa Eo re 2 ae 22 & g 5 y Fs rm) 3 1 = soo LWAR 25 45 65 &5 105 125 145 165 f 9 2 4 8 8 10 0 2 2 1 #10 5 =O 2 JUNCTION TEMPERATURE (C) 2 TIME FROM POWER TURN-ON POSITIVE SUPPLY VOLTAGE MINUS (MINUTES) INPUT VOLTAGE [Vst Vin} (VOLTS) Total Input Noise Voltage ooae-# vs Frequency* E i S ito a s e 2 g Auxiliary Circuits < 5 9 oO Offset Null Output Short Circuit Protection 3 0 OVt Vt = 40 5 w 3s 2 = 2 1 8 O19 100 1k 10k weurs | OUTPUT FREQUENCY (H2} 0032-5 *Noise voltage includes contri- bution from source resistance. 1-49ELH0032/ELH0032C ELANTEC INC cde dD Jhe455? ooodre? b = Fast Operational Amplifier ee "779-18 Typical Applications Unity Gain Amplifier 100X Buffer Amplifier 10X Buffer Amplifier Ve Vt Ve INPUT 0 oureur i OouTPUT PO OUTPUT TYP BW3 agp = 45 MHz ws TYP BW3 ap = 10 MHz TYP BW3 ap = 5 MHz Non-Compensated Unity High-Speed Sample and Hold Gain Inverter J r INPUT m=O OUTPUT anit *Low leakage for minimum drift TYP BW3 gp = 70 MHz i Locic CONTROL Vyi2_pHoo34 W2 DHOOM A y~ High-Speed Current Mode MUX 0032-12 9092~13 1-50ELANTEC INC 26E D MW 3129557 O00072S & _ ELH0032/ELH0032C Fast Operational Amplifier EL Applications Information Power Supply Decoupling The ELH0032/ELH0032C, like most high-speed circuits, is sensitive to layout and stray capaci- tance. Power supplies should be bypassed as near to pins 10 and 12 as possible with low inductance capacitors such as 0.01 uF disc ceramics. Com- pensation components should also be located close to the appropriate pins to minimize stray reactances. Input Current Because the input devices are FETs, the input bias current may be expected to double for each 11C junction temperature rise. This characteris- tic is plotted in the typical performance charac- teristics graphs. The device will self-heat due to internal power dissipation after application of power, thus raising the FET junction tempera- ture 40C-60C above the free-air ambient tem- perature when supplies are 15V. The device temperature will stabilize within 5-10 minutes after application of power, and the input bias cur- rents measured at the time will be indicative of normal operating currents. An additional rise will occur as power is delivered to a load due to addi- tional internal power dissipation. There is an additional effect on input bias current as the input voltage is changed. The effect, com- mon to all FETs, is an avalance-like increase in gate current as the FET gate-to-drain voltage is increased above a critical value, depending on FET geometry and doping levels. This effect will be noted as the input voltage of the ELH0032 is taken below ground potential when the supplies are 15V. All of the effects described here may be minimized by operating the device with Vg < #15V, These effects are indicated in the typical per- formance curves. Input Capacitance The input capacitance to the ELH0032/ ELH0032C is typically 5 pF and thus may form a significant time constant with high value resis- tors. For optimum performance, the input capaci- tance to the inverting input should be compen- sated by a small capacitor across the feedback re- sistor. The value is strongly dependent on layout and closed loop gain, but will typically be in the neighborhood of several picofarads. In the non-inverting configuration, it may be ad- vantageous to bootstrap the case and/or a guard conductor to the inverting input. This serves both to divert leakage currents away from the non-inverting input and to reduce the effective input capacitance. A unity gain follower so treat- ed will have an input capacitance under a 1 pF. Heatsinking While the ELH0032/ELH0032C is specified for operation without any explicit heatsink, internal power dissipation does cause a significant tem- perature rise. Improved bias current performance can thus be obtained by limiting this tempera- ture rise with a small heat sink such as the Ther- malloy No. 2241 or equivalent. The case of the device has no internal connection, so it may be electrically connected to the sink if this is advan- tageous. Be aware, however, that this will affect the stray capacitances to all pins and may thus require adjustment of circuit compensation val- ues. Burn-In Circuit (Functional Diagram) OUTPUT COMP +15V 0032-14 1-51 O2800H TH/ce00H Ia