named FAIRCHILD SEMICONDUC TOR De FAIRCHILD ee A Schlumberger Company IRF220-223/IRF620-623 MTP7N18/7N20 T-39-(/ N-Channel Power MOSFETs, 7 A, 150-200 V Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, S such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. U @ Low Rosjon) 8S e Vas Rated at +20 V Isoozor Silicon Gate for Fast Switching Speeds Ipss: Vosjony Specified at Elevated Temperature IRF220 IRF620 IRF221 IRF621 Rugged IRF222 IRF622 @ Low Drive Requirements IRF223 IRF623 @ Ease of Paralleling MTP7N18 MTP7N20 Product Summary Ip at Ip at Part Number Voss Ros (on) To = 25C To = 100C Case Style IRF220 200 V 0.8 2 5.0 A 3.0 A TO-204AA IRF221 150 V 0.8 Q 5OA 3.0 A IRF222 200 V 1.2 9 4.0 A 25 A IRF223 150 V 1.22 4.0 A 25 A IRF620 200 V 0.8 Q 5.0 A 3.0 A TO-220AB {RF621 150 V 0.8 22 5.0 A 3.0 A IRF622 200 V 120 4.0 A 25A IRF623 ; 150 V 1.22 4.0 A 25A MTP7N18 180 V 0.7 Q TOA 45 A MTP7N20 200 V 0.7 2 70A 45 A Notes For information concerning connection diagram and package outline, refer to Section 7. 2-87 ay pe Msuecu74 ooa7a7y s yr t : . FAIRCHILD SEMICONDUCTOR ay de Bsueae74 onaza7s 2 IRF220-223/1RF620-623 - MTP7N18/7N20 : 7-39-11 i . Maximum Ratings Rating IRF220/222 Rating IRF620/622 Rating IRF222/223 Symbol Characteristic MTP7N20 MTP7N18 IRF622/623 Unit Vpss Drain to Source Voltage! 200 180 150 V Voer Drain to Gate Voltage! 200 180 150 Vv Res = 20 k2 Ves Gate to Source Voltage 20 +20 20 v ' Ty, Tstg | Operating Junction and -55 to +150 -55 to + 150 -55 to +150 C I Storage Temperatures i TL Maximum Lead Temperature 275 275 276 C i for Soldering Purposes, = 1/8" From Case for 5 s : Maximum Thermal Characteristics IRF220 - 223/IRF620 - 623 MTP7N18/20 Rasc Thermal Resistance, 3.12 1.67 C/W Junction to Case Raa Thermal Resistance, 30/80 80 C/W Junction to Ambient Pp Total Power Dissipation 40 75 WwW at To = 25C lpm Pulsed Drain Current? 20 20 A Electrical Characteristics (To = 25C unless otherwise noted) | Min | Max | Symbol Characteristic Unit | Test Conditions Off Characteristics Viaryoss | Drain Source Breakdown Voltage! Vv Vas =0 V, Ip = 250 vA IRF220/222/620/622/ 200 MTP7N20 MTP7N18 180 (RF 221 /223/621/623 150 loss Zero Gate Voltage Drain Current 250 BA Vps = Rated Voss, Vag = 0 V 1000 BA Vps = 0.8 x Rated Vpss, Veg = 0 V, To = 126C lass Gate-Body Leakage Current nA Ves =+20 V, Vps = 0 V IRF220-223 100 IRF620-623/MTP7N18/20 +500 2-88 FAIRCHILD SEMICONDUCTOR ay eB suece74 onazaz, a IRF220-223/IRF620-623 MTP7N18/7N20 T-39-11 Electrical Characteristics (Cont.) (To = 25C unless otherwise noted) Symbol! Characteristic | Min | Max | Unit | Test Conditions On Characteristics Vesith) Gate Threshold Voltage Vv IRF220-223/IRF620-623 2.0 4.0 Ip = 250 LA, Vos = Ves MTP7N18/20 2.0 4.5 Ib=1 MA, Vos = Ves Rosen) Static Drain-Source On-Resistance? Q Vas =10 V, Ip=25A IRF220/221/620/621 0.8 IRF222/223/622/623 1.2 MTP7N18/7N20 0.7 Ip=3.5 A Vpsion) | Drain-Source On-Voltage 2.45 Vv Vag =10 V; IDp=3.5 A MTP7N18/7N20 5.9 v Vag = 10 V; Ip =7.0 A 5.0 Vv Vas=10 V, Ip=35A Tg = 100C Os Forward Transconductance 1.38 (U) Vps = 10 V, Ip=2.5 A Dynamic Characteristics Ciss Input Capacitance 600 pF Vos = 25 V, Vas =0 V Coss Output Capacitance 300 pF f= 1.0 MHz Criss Reverse Transfer Capacitance 80 pF Switching Characteristics (Tc = 25C, Figures 1, 2) tavon) Turn-On Delay Time 40 ns Vop = 100 V, Ilp=25A | tr Rise Time 60 ns Ros . to Agen = 50 2 tarot Turn-Off Delay Time 100 ns ty Fall Time 60 ns Qg Total Gate Charge 15 nc Vas =10 V, Ip=6.0A Vop = 45 V Symbol! Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage 1.8 Vv I5 = 5.0 A; Vag =0 V 1.4 Vv Ig = 4.0 A; Veg =0 V tr Reverse Recovery Time 350 ns Ig = 5.0 A; dig/dt= 25 A/uS Notes 1. Ty = +25C to +150C 2. Pulse width limited by Ty; 3. Switching time measurements performed on LEM TR-58 test equipment. 2-89 wane FAIRCHILD SEMICONDUCTOR ennenedin, RU ear ata we IRF220-223/IRF620-623 MTP7N18/7N20 Te 39-]] Typical Electrical Characteristics Figure 1 Switching Test Circuit CT ee Typical Performance Curves Figure 3. Output Characteristics Voe= v ~ o o IyDRAIN CURRENTA, i) sv 1 2 3 4 5 Vos~-DRAIN TO SOURCE VOLTAGEy PCIONSOF Figure 5 Transfer Characteristics lp-~DRAIN CURRENTA ~ n 4 5 6 7 8 9 VoaGATE 10 SOURCE VOLTAGEV 10 PCIOZIOF Figure 2 Switching Waveforms INPUT, Vin Figure 4 Static Drain to Source Resistance vs Drain Current Vog= 10 V = 2 a %=25C RoajnySTATIC DRAIN TO SOURCE RESISTANCEQ 2 a a e nu o 2 2 6 a 10 12 fyDRAIN CURRENTA FC1e200F Figure 6 Temperature Variation of Gate to Source Threshold Voltage NORMALIZED GATE THRESHOLD VOLTAGE ~50 Q 50 100 150 T,JUNCTION TEMPERATURE*C PoossaiF ay de Baucse7y Ooe7a?? g 5 . FAIRCHILD SEMICONDUCTOR ay pe Bayes.74 0027878 2 i IRF220-223/IRF620-623 MTP7N18/7N20 . T~39~11] | Typical Performance Curves (Cont) Figure 7 Capacitance vs Drain to Source Voltage t i wo : a i bot : 5 tor | s j i i : iz v f=1 tar 108 . 4ot 2 102 YoaORAIN TO SOURCE VOLTAGEV Figure 9 Forward Biased Safe Operating Area for IRF220-223 and IRF620-623 foORAIN CURRENTA ~ z a 10-1 10 7 4 6491 2 4 4920 2 4 6 199 YosDRAIN TO SOURCE VOLTAGEV Figure 11 Forward Biased Safe Operating Area for MTP7N18/7N20 02 REGION MAY BE LIMITED BY = 2 Ip-DRAIN CURRENT-~A 3 10-4 10! 1402 103 VosDRAIN TO SOURCE VOLTAGEV Poi0251F Figure 8 Gate to Source Voltage vs Total Gate Charge i t VosGATE TO SOURCE VOLTAGEV o 4 8 2 % 20 a Q,TOTAL GATE CHARGEnc Figure 10 Transient Thermal Resistance vs Time for IRF220-223 and IRF620-623 101 = < z oa ze 5 we 10 a Ba ze <2 8 aye t J !} I _ f Duty Fector, D = 2 ornantng pottes Train = Te * Pe Zee 10-1 10-74 10" * 10" 107 * 103 14 tTiME--ms POOSSTIF Figure 12 Transient Thermal Resistance vs Time for MTP7N18/7N20 ZoxTRANSIENT THERMAL RESISTANCECrw 3 Ww to-1 om 4 10t 4 103 4 103 tTIMEms POOSESIE 2-91