PD - 95724 IRF7401PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET(R) Power MOSFET A A D 1 8 S 2 7 S 3 6 4 5 S G VDSS = 20V D D D RDS(on) = 0.022 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Max. 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units 10 8.7 7.0 35 2.5 0.02 12 5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. Max. Units 50 C/W 8/10/04 IRF7401PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 20 0.70 11 Typ. 0.044 13 72 65 92 RDS(ON) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance 2.5 LS Internal Source Inductance 4.0 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1600 690 310 V(BR)DSS IGSS Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.022 VGS = 4.5V, ID = 4.1A 0.030 VGS = 2.7V, ID = 3.5A V VDS = VGS, ID = 250A S VDS = 15V, ID = 4.1A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, T J = 125 C 100 VGS = 12V nA -100 VGS = -12V 48 ID = 4.1A 5.1 nC VDS = 16V 20 VGS = 4.5V, See Fig. 6 and 12 VDD = 10V ID = 4.1A ns RG = 6.0 RD = 2.4, See Fig. 10 D nH Between lead tip and center of die contact pF VGS = 0V VDS = 15V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS I SM VSD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 3.1 showing the A G integral reverse 35 p-n junction diode. S 1.0 V TJ = 25C, IS = 2.0A, VGS = 0V 39 59 ns TJ = 25C, IF = 4.1A 42 63 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. ISD 4.1A, di/dt 100A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 10sec. max. junction temperature. ( See fig. 11 ) TJ 150C IRF7401PbF 1000 1000 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 10 1.5V 1 0.1 20s PULSE WIDTH TA = 25C A 1 10 100 10 1.5V R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25C TJ = 150C 10 V DS = 15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 10 100 Fig 2. Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20s PULSE WIDTH TJ = 150C A 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1.5 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP TOP A 5.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics I D = 6.9A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 A 80 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRF7401PbF 3000 V GS , Gate-to-Source Voltage (V) 2500 C, Capacitance (pF) 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 2000 1500 Coss 1000 Crss 500 0 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 12 0 A 1 I D = 4.1A VDS = 16V 0 100 10 30 40 A 50 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25C ID , Drain Current (A) ISD , Reverse Drain Current (A) 20 TJ = 150C 10 1 100us 1ms 10 10ms VGS = 0V 0.1 0.0 1.0 2.0 3.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 4.0 TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRF7401PbF 10.0 VDS V GS ID , Drain Current (A) 8.0 D.U.T. RG 6.0 RD + - V DD 4.5V Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7401PbF Current Regulator Same Type as D.U.T. 50K QG .2F 12V .3F 4.5V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 12a. Basic Gate Charge Waveform ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit IRF7401PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For N-Channel HEXFETS [ISD ] IRF7401PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 C .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMETERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER IRF7401PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04