VUO 105 IdAVM = 140 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 + Type ~ - ~ * delivery time on request Test Conditions IdAVM TC = 85C, module IFSM TVJ = 45C; VR = 0 + ~ ~ ~ VUO 105-12NO7 VUO 105-14NO7 VUO 105-16NO7 VUO 105-18NO7* Symbol - ~ Maximum Ratings Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 I2t 140 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1500 1650 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1500 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11250 11300 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9120 9350 A2s A2s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ 5 15 % 44 15 % 5 15 % 44 15 % Nm lb.in. Nm lb.in. 225 g Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors TVJ TVJM Tstg Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Weight typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25C TVJ = TVJM 0.3 8.0 mA mA VF IF = 150 A; TVJ = 25C 1.6 V VT0 For power-loss calculations only 0.8 V 5 mW Dimensions in mm (1 mm = 0.0394") Characteristic Values rT RthJC per diode per module 0.83 0.138 K/W K/W RthJH per diode per module 1.13 0.188 K/W K/W Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 http://store.iiic.cc/ VUO 105 I2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 I2t versus time (1-10 ms) per diode Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i Rthi (K/W) 1 2 3 4 0.014 0.067 0.139 0.61 ti (s) 0.011 0.094 0.28 0.7 Constants for ZthJK calculation: i Rthi (K/W) 1 2 3 4 5 0.014 0.067 0.139 0.61 0.3 ti (s) 0.011 0.094 0.28 0.7 4.2 Fig. 6 Transient thermal impedance per diode (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/