/ 1N4099 thru f 1N4135 Microsemi Corp. and , The diode experts 1 N46 4 4 th ru i / SCOTTSDALE, AZ 1N4627 / For more information call: DO = 3 5 (602) 941-6300 FEATURES SILICON ZENER VOLTAGE 1.8 TO 100V ow mw ALL HAVE JAN, JANTX AND JANTXV-1 QUALIFICATIONS LOW NOISE TO MIL-S-19500/435 ZENER DIODES LOW NOISE LOW REVERSE LEAKAGE MAXIMUM RATINGS Junction and Storage Temperatures: - 65C to + 200C DC Power Dissipation: 500 mW Power Derating: 4.0 mW/C above 50C inDO-35 1 Forward Voltage @ 200 mA: 1.1 Volts 1N4099 - 1N4135 =} @ 100 mA: 1.0 Volts 1N4614- 1N4627 I -080 MAX. * ELECTRICAL CHARACTERISTICS @ 25C os ui MAXIMUM 1.000. pain NOMINAL MAXIMUM MAXIMUM | MAXIMUM | TEMP. COEFF, 35.400 'N- ZENER | ZENER ZENER MAXIMUM NOISE ZENER OF yepec | vottace | Test _ | IMPEDANCE REVERSE DENSITY | CURRENT ZENER ' TYPE Vz @lzp_ | CURRENT 227 CURRENT Np @ lz Im VOLTAGE NO (Note 1) lor {Note 2} IZ@VR {Note 3) ayZ t t VOLT! OHMS VOLTS VIVA A H/C OLTS UA uA uVAz m POLARITY az wax. IN4614 18 250 1200 75 1 1 120 -0.075 MARK . 1N4615 2.0 250 1250 5.0 1 1 110 -0.075 (CATHODE) i 1N4616 22 250 7300 40 1 1 100 -0.075 1N4617 24 250 1400 20 1 1 95 -0.075 1N4618 27 250 1500 4.0 1 1 90 -0.075 : 1N4619 3.0 250 1600 08 1 1 87 -0.075 1.000 suiy 1N4620 3.3 250 1650 75 15 1 85 -0.075 25.400" 1N4621 36 250 1700 75 2 1 83 -0.065 0.018/0.022 yi, |. | 1N4622 3.9 250 1650 5.0 2 1 80 -0.060 0.457/0.559 1N4623 43 250 1600 4.0 2 1 77 -0.050 i 1Na624 47 250 1550 10.0 3 1 75 -0.050 +0.020 ' 1N4625 51 250 1500 10.0 3 2 70 9.045 +9030 re 1N4626 56 250 1400 10.0 4 4 65 -0.020 +0: 1N4627 6.2 260 1200 10.0 5 5 61 -0.010 +0.050 FIGURE 1 1N4099 68 250 200 10.0 5.17 40 56 0.060 : cans jy INGH 1N4100 78 250 200 10.0 5.70 40 51 0.065 All dimensions in mm 1N4101 82 250 200 1.0 6.24 40 46 0.070 : 1N4102 87 250 200 10 6.61 40 44 0.075 14103 91 250 200 1.0 6.92 40 42 0.080 1N4104 10 250 200 1.0 7.60 40 38 0.080 1N4105 17 250 200 05 | 8.44 40 35 0.080 MECHANICAL 1N4106 12 250 200 os | 9.42 40 32 0.080 CHARACTERISTICS 414107 13 250 200 08 | 987 40 29 0.080 14108 14 250 200 (05 | 10.68 40 27 0.085 . : 1N4109 15 250 100 05 | 11.40 40 25 0.085 CASE: Hermetically sealed glass 41N4110, 16 250 100 05 | 12.15 40 24 0.085 case. DO-35. NATH 7 250 100 05 | 12.92 40 22 0.090 1Na112 18 250 100 05 | 13.67 40 21 0.090 FINISH: All external surfaces are 1N4113 19 250 160 05 14.44 40 20 0.090 . . dlead 1 1Nat14 20 250 159 or | 15.20 40 19 0.090 corrosion resistant and ieads sol- 1N4115 22 250 150 01 | 16.72 40 7 0.090 IN4116 24 250 150 o1_| 18.25 40 16 0.090 derable. 1N4117 25 250 150 .o1 | 19.00 40 15 0.090 00 1N4118 27 250 150 101 | 20.45 40 14 0.090 THERMAL RESISTANCE: 200 C/ IN4119, 28 250 200 or | 21.28 40 14 0.095 W (Typical) junction to lead at 1N4120 30 250 200 01 | 22.80 40 13 0.095 -j : . 4N4121 33 250 200 01 | 25.08 40 12 0.095 0.375-inches from body in DO 1N4122 36 250 200 01 _| 27.38 40 i 0.095 35, Metallurgically bonded DO- 1N4123 39 250 200 01 | 29.65 40 98 0.095 5, Le 1N4124 43 250 250 01 | 3265 40 B9 0.095 35s exhibit less than 100C/ W at 1N4125 47 250 250 o1 | 35.75 40 81 0.095 zero distance from body 1N4126 51 250 300 (01 | 38.76 40 75 0.100 : 1N4127 56 250 300 01 | 42.60 40 6.7 0.100 POLARITY: Diode to be operated 14128 60 250 400 01 | 4560 40 64 0.100 ith the banded d itive 1N4129 62 250 500 07 | 47.10 40 61 0.100 wi anded en positt 1N4130 68 280 700 01 | 51.68 40 56 0.100 with respect to the opposite end. 4NA131 5 250 700 or | 87.00 40 51 0.100 1Na132 B2 250 800 01 | 62.32 40 46 0.100 : 1N4133 87 250 1000 O1 | 66.12 40 44 0.100 WEIGHT: 0.2 grams. 1N4134 91 250 1200 01 | 69.16 40 42 0.100 . 1N4135 100 250 1500 01 _|_76.00 40 38 0.100 MOUNTING POSITION: Any. *JEDEC Registered Data. 5-27 1N4099 thru 1N4135, 1N4614 thru 1N4627 DO-35 Noise density, (Np) is specified in microvolts-rms per square-root-hertz. Actual measurement is performed using a1 KHz to3 KHz frequency bandpass filter at a constant Zener test current (I77) at 25C ambient temperature. Np is calculated from the formula. BATTERY SHIELDED | () POWER (+) TEST O SUPPLY CIRCUIT | (LOW NOISE t SOURCE) oc BLOCKING eT CAPACITOR ae 500 s2 400 Lo NZ | 2S 300 AMPLI- ox 200 Fi JER Ea 100 FILTER a2 0 loo ke 0 2 50 75 100 125 150 175 BP =1 103 KH, ToL . thue Worse LS" rom eae Co) METER FIGURE 3 POWER DERATING CURVE FIGURE 2 NOISE DENSITY MEASUREMENT CIRCUIT CAPACITANCE vs. Vz CURVE TYPICAL CAPACITANCE IN PICOSARADS b O ONOwdS 1 0 10 20 30 40 SO 60 70 80 90 100 110 ZENER VOLTAGE Vz FIGURE 4 CAPACITANCE VS. ZENER VOLTAGE (TYPICAL) NOTE1 The JEDEC type numbers shown above have a standard tolerance of + 5% on the nominal Zener voltage. Also available in 2% and 1% tolerance, suffix C and D respectively. Vz is measured with the diode in thermal equilibrium in 25C still air. NOTE2 Zener impedance is derived by superimposing on I7t, a 60 Hz rmsaa.c. current equal to 10% of Izy (25uA a.c.). NOTE3 Based upon 400 mW maximum power dissipation at 75C lead temperature, 5-28 allowance has been made for the higher voltage associated with operation at higher currents.