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ASDL-5770
High Performance Photodiode in Side Look Package
Data Sheet
Description
ASDL-5770 is a Silicon PIN Photodiode encapsulated in
dark blue Side Look package. The added feature of a dark
tint acts as an optical lter to reduce eects of ambient
light from interfering with the Infrared signal. It is ideal
for applications from 700nm to 1100nm that require high
sensitivity over wide viewing angle.
Features
• Dark Blue Side Look Package
• High Sensitivity
• Low Dark Current
• Wide Viewing Angle
• Lead Free & ROHS Compliant
• Available in Tape & Reel
Applications
• IR Remote Control for Consumer Device
• IR Remote Control for Industrial Electronics &
Equipment
• High Speed IR data communication
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Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protuded resin under ange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Specications are subject to change without notice.
Ordering Information
Part Number Lead Form Color Packaging Shipping Option
ASDL-5770-D22
ASDL-5770-D31
Straight Dark Blue Tape & Reel
Bulk
4000pcs
8000pcs / Carton
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Absolute Maximum Ratings at TA=25°C
Parameter Symbol Min. Max Unit
Power Dissipation PDISS 150 mW
Reverse Voltage (Ir=100uA) VR30 V
Operating Temperature TO-40 85 °C
Storage Temperature TS-55 100 °C
Junction temperature TJ110 °C
Lead Soldering Temperature
[ .6mm (0.063”) From Body ]
260°C for 5 seconds
Electrical Characteristics at 25°C
Parameter Symbol Min. Typ. Max. Unit Condition
Forward Voltage VF1 1.3 V If = 50mA
Breakdown Voltage VBR 30 V Ir= 100uA
Ee = 0mW/cm2
Reverse Dark Current ID 30 nA VR =10V
Ee =0mW/cm2
Diode Capacitance CO - 25 pF Vr = 3V
F = 1MHZ
Ee = 0mW/cm2
Open Circuit Voltage VOC 350 mV λ = 940nm
Ee=0.5mW/cm2
Thermal Resistance,
Junction to Pin
RqJP - 375 °C/W
Optical Characteristics at 25°C
Parameter Symbol Min. Typ. Max. Unit Condition
Photocurrent IPH 1.7 2 uA Ee = 0.1mW/cm2
λ = 940nm
Vr = 5V
Radiant Sensitive Area A 1.55 mm2
Absolute Spectral Sensitivity S 0.6 A/W λ = 940nm
Vr = 5V
Viewing Angle 2θ1/2 140 Deg
Wavelength of Peak sensitivity λPK 900 nm
Spectral BandWidth Δλ 700 900 1100 nm
Rise Time tr50 ns VR = 10V
λ = 850nm
RL = 1K Ω
Fall Time tf50 ns VR = 10V
λ = 850nm
RL = 1K Ω
4
10
-1
0
1
2
3
10
10
10
10
10
-2 -1 0 1 2
10 10 10 10
Figure 1. DARK CURRENT VS. REVERSE VOLTAGE
TA=25°C, Ee=0 mW/cm
Figure 2. CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ; Ee=0mW/cm
Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE Figure 4. DARK CURRENT VS. AMBIENT TEMPERATURE
VR=10, Ee=0mW/cm
Reverse Voltage VR
Ambient Temperature
Reverse Voltage VR
Ambient Temperature
Dark Current ID
Capacitance Ct
Photocurrent
Dark Current ID
pA
nA
Is amb
22
2
Is 25
4000
3000
2000
1000
0
0510 2015 V V
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20 0 20 40 60 80 C0 20 40 60 80 100
pF
o
o
C
o
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated)
%
100
80
60
40
20
0
700 800 900 1000 1100
10
-2 mW
CM
10
2
3
uA
010 20
30
40
50
60
80
100
1.0
0.9
0.8
0.6
0
175
125
75
25
0
-40
Wavelength
Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH
Irradiance Ee
Figure 6. PHOTOCURRENT VS IRRADIANCE λ = 940 nm
Photocurrent Ip
Relative Spectral Sensitivity
Figure 7. SENSITIVITY DIAGRAM
Ambient Temperature
Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE
Total Power Dissipation mW
Relative Sensitivity
-1
10
0
10
1
10
2
10
1
10
0
10
-1
10
0.7
0.30.5 0.2 0.4 100 C
o o o
o
o
o
o
o
o
o
-20 0 20 40 60 80
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) Cont.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-0021EN - January 22, 2007