M/A-COM SEMICOND ALORA MA = Fe NGTON JJ) | D WM Sb4eel4 0001400 4 MMIc T-07-11 MA48700 Series GaAs Multiplier Varactors 92 Description The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide single state, high order multiplication at output frequencies extending to 100 GHz. All varactors in this series are available in either package or chip form. The cathode is the heat sink end of the package. Features @ HIGH CUTOFF FREQUENCY @ OPERATING TEMPERATURES FROM ~65C to +200C M@ GUARANTEED REPRODUCIBILITY Applications This series of Gallium Arsenide Multiplier Varactors is intended for medium power harmonic generation with high conversion efficiency. These diodes may be used to double or triple the frequency outputs of Gunn or IMPATT oscillators in millimeter wave radar and communications systems. They are also useful in local oscillators and in millimeter wave phase shifters, modulators and upconverters. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 * TELEX 94-9464 8-35D MH Sb4ee.4 OOOL401 & MMIC M/A-COM SEMICONDsBRLNGTON di MA48700 Series GaAs Multiplier Varactors 8-36 sgn a - - Specifications @ Ty = 25C 1-07-11 ELECTRICAL CHARACTERISTICS Vp = 15V (Min.) CJp Range' (pF) Fo-6 (GHz) .150 .249 .250 .349 .350 .449 .450 .549 550 .650 200 MA48704A MA48705A 250 MA48703A MA48704B MA48705B 300 MA48702A MA48703B MA48704C MA48705C 350 MA48701A MA48702B MA48703C MA48704D MA48705D 400 MA48701B MA48702C MA48703D MA48704E MA48705E 450 MA48701C MA48702D MA48703E 500 MA48701D MA48702E 550 MA48701E Vp = 25V (Min.) CJg Range" (pF) Fo-6 (GHz) .150 .249 .250 .349 .350 .449 450 .549 .550 .650 200 MA48708A MA48709A MA48710A 250 MA48707A MA48708B MA48709B MA48710B 300 MA48706A MA48707B MA48708C - 350 MA48706B MA48707C 400 MA48706C NOTES: 1. Junction capacitance (C; is measured at 1 MHz and 0 volts on a bridge which has been balanced with a shielded test holder connnected in place, but open circuited. 2. Cutoff frequency measurements (Fe) are made at 0 volts and then extropolated to 6 volts. See curve of Figure 1 showing typical Fo 6 (cutoff at -6 volts) versus Feo (cutoff at 0 volts) performance curve. 3. All GaAs muitiplier diodes are available in any case style shown in this bulletin. When ordering, specify the desired case by adding the case designation as a suffix to the model number. 4. Nominal package parasitics (Cp and Lg) are given for each case style with the outline drawing. The Cp tolerances listed are typically 40.02 pF. 5. The measured serles resonant frequency of each varactor can be supplied with the diode or special order, at a nominal price. 6. ANY = Cyy Cy, 6 =Cy +05 _____ = 0.52 typical ~ = 2.20 typical Clo Cy3 7. Breakdown voltage is measured at ~10 A. Other breakdown voltages are available on special request. M/A-COM SEMICONDUCTOR PRODUCTS OPERATON * Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464- D M Sb4e2eR4 0001402 & MENIC NZAS COM SENTCOND 3BRLNGTON * * MA48700 Series GaAs Multiplier Varactors Typical Performance Curves | 1-07-11 900 80 Zot 1 UTC T ToT tit Fin INPUT OUTPUT #09 oh? _| Set | [urmuen| | Ba, | 28 700 60 err =@-(a)(FouT/Fc! : J 600 I 50 A 500 ss = Yi > AN dene! 2 400 3 40 (a=i160) 9 wy / 300 z: 7 a 200 20 Y 100 10 4 4 0 50 100 150 200 250 300 350 400 450 500 0 1 10 100 Fy (GHz) Fo/Fout FIGURE 1. Relationship Between Cutoff Frequency at FIGURE 4. Multipiens Efficiency of x3 GaAs Varactor Zero and Six Volts in GaAs Varactor Diodes . 40 Zo t Terr q jt Tt F INPUT a )} OUTPUT 935 fe gincurt | fmucrietien| | CRCUT ee Cc, oR L LL LIU ty Sy s 30 EF =6-4@)(Four/Fe) Le 8 y) > 2 3 wus 20 9 15 f Ww J Cp 10 fr ABRUPT, FIGURE 2. Varactor Diode Equivalent Circuit 5 f {a=16.6) A) 0 1 10 100 Fo/Four 80 ree oer FIGURE 5. Theoretical Efficiency of x4 GaAs Varactor MO] Skier TP ued | eee | . Multipliers 70 [ 2 o8ae | |MULTIPLIER! | 9) gas . . ore -e4eFounie Application Notes 60 La Many methods exist for measuring the quality factor or = 50 A cutoff frequency (Fc) of varactor diodes. Among the most = | Mies widely used methods are the reflection coefficient techniques 9 40 had of Houlding [1] and Harrison [2]. Unfortunately, at high wi / microwave frequencies, varactor parasitics such as 2 30 supporting structures, contacting straps, and case u YY capacitance tend to make reflection test set calibrations 20 difficult. Also, as varactor quality increases, the accuracy of Kh - these techniques decreases. 10 /) . In 1964, DeLoach [3] devised a method for varactor 0 characterization that avoided the above difficulties. This 1 10 100 method involved the series resonance of a varactor diode F /F and yielded not only series resistance but junction OUT capacitance and parasitic inductance at any bias voltage FIGURE 3. Multiptiers. Efficiency of x2 GaAs Varactor All of these parameters were determined at the self M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464 8-3;8-38 MA48700 Series GaAs Multiplier Varactors 11D Mm 564ee14 0001403 T manic Application Notes (Contd) resonant frequency of the device and in a defined microwave environment. However, the case capacitance of DeLoachs packaged diodes was essentially non-existent thus simplifying certain mathematical solutions. Many widely used industrial varactor packages do have case capaci- tances that may in fact be larger than the devices junction capacitance. A more recent analysis [4] has shown that the inclusion of case capacitance in the equivalent varactor circuit (shown in Figure 2) will modify the determination of cutoff frequency obtained by DeLoachs methods. DeLoachs formula for diode resistance is as follows: 1 E= if we ignore the fringing capacitance (Cf), expansion of the expression for the real part of the total diode impedance, however, reveals that: Rsv = (Xcp)? crs _ (4) (Rm)? (XLS + Xcp + Xcj)? 2 (Rm) it follows that: Foy = 1 an Rsv Civ where: Tp = power transmission loss ratio Zo = characteristic guide impedance at resonance Rm = Re {Zv] M/A-COM SEMICOND :BRLNGTON T-07-11 DeLoachs method not only results in additional information for the circuit designer, but it produces a repeatable measurement that allows much greater accuracy in diode selection resulting in increased customer yields. DeLoachs measurements, however, are only as good as the diode holder used. Figure A shows a typical DeLoach holder in cross sectioned view. This is but one of several different holders used to evaluate GaAs varactors over a total frequency range of 4 GHz to 40 GHz. Each holder is computer designed to cover a full waveguide band. The waveguide height of each case is reduced to the ceramic height of the case style under test. The VSWR of each holder and choke combination is less than 1.1:1 across the waveguide band. Figure B is a block diagram of the DeLoach test circuit. For more in-depth discussion on varactor multipliers, consult M/A-COMs application nate, AG312, Application of Multipliers, C.M. Howell, 1986, Dy VIEL. Yj) LU FIGURE A. Typical DeLoach Holder aime em Cjy = junction capacitance at reverse bias voltage V Xcj. XCp. X-Ls = junction, package and inductive reactances respectively [1] Houlding, N., Measurement of Varactor Quality, Microwave Journal, : . . . Volume 3, No. 1, January 1960. Rsy = junction series resistance at voltage V [2] Harrison, R., Parametric Diode Q Measurements, Microwave Journal, = i i Volume 3, No. 5, May 1960. Fev varactor figure of merit or cutoff frequency at [3} DeLoach, B.C., A New Microwave Measurement Technique to voltage V Characterize Diodes and an 800 Gc Cutoff Frequency Varactor at Zero Volts Bias, IEEE Transactions on MT&T, January 1964. [4] Hapgood, D.W., "Determination of Varactor Parameters by a Modified DeLoach Method," Microwave Journal, Volume 24, No. 11, November 1981. DIGITAL VOLTMETER | 0-30 V DETECTOR BIAS SUPPLY Arcee 10.dB FREQUENCY 0-50dB APPLICABLE HIGH FREQUENCY coupLeR [7] 'SOLATOR -- METER 1 PRECISION -4 VARACTOR [ SENSITIVITY OSCILLATOR ATTENUATOR HOLDER DETECTOR 1 HIGH SENSITIVITY OSCILLOSCOPE FIGURE B. Typical DeLoach Test Set M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464M/A-COM SEMICOND,BRLNGTON 11 D WM Sb4eed4 OOOL4O4 1 MENIC _ MA48700 Series GaAs Multiplier Varactors Case Styles * DENOTES CATHODE NOT TO SCALE 30 T-07-11 H po| DIA, 0.119 0.060 0.205 0.085 0.060 0.060 0.016 0.079 ea FT em A B Cc D E F G H - O a rio i na GaAs: Cp = 0.18 pF Typical B Lg = 0.60 nH Typical DIA. 31 ~. ADIA.> INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX, a il A 0.119 0.127 3,02 3,23 e . B 0.085 0.097 2,16 2,46 i - C 0.016 0.024 0,41 0,61 { D 0.077 0.083 1,96 2,11 t ~C Cp = 0.18 pF Typical Ff Lg = 0.60 nH Typical 32 INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A 0.119 0.125 3,02 3,18 B 0.055 0.065 1,40 1,65 oi C 0.077 0.083 1,96 2,14 D 0.025 0,64 Cp = 0.30 pF Typical Lg = 0.40 nH Typical Ss DIA, 36 nine INCHES MILLIMETERS D | DIM. MIN. | MAX. MIN. | MAX. DIA A 0.119 0.125 3,02 3,18 z B 0.143 0.163 3,63 4,14 e Y C 0.060 0.064 1,52 1,63 f B D 0.060 0.064 1,52 1,63 G E _ 0.025 0,64 t f | F 0.077 0.083 1,96 2,14 Y % G 0.086 0.096 2,18 2,44 L. A DIA. > GaAs: Cp = 0.18 pF Typlcat Lg = 0.60 nH Typical M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464 8-391b D MM 5642214 OOOL4OS 3 MMIC. )Ss*T-O7e11 MA48700 Series GaAs Multiplier Varactors Case Styles (Co ntd) DENOTES CATHODE NOT TO SCALE- M7A-COM SEMICOND.BRLNGTON 91 : MH ia pl . MIN. DIA. 0.119 k 0.115 c 0.060 yy & 0.060 A { | 0.077 G 0.016 YF 0. t Cp = 0.30 pF Typical ADIA. Lg = 0.40 nH Typical 92 INCHES MILLIMETERS | DIM. MIN. | _MAX. MIN. | MAX. IA A 0.078 0.086 1,98 2,18 c B 0.070 0.080 1,78 3,03 a | C 0.024 | 0.026 0,61 0,66 cool Le! D 0.015 _ 0,38 E 0.040 0.050 1,02 1,27 l ol< F 0.004 0.010 0,10 0,25 G 0.047 0.053 1,19 1,35 at Ep c .15 pF Typical 0. lg 0.17 nH Typical 0 M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 * TELEX 94-9464 8-4ae | 5642214 OQOOL4OR 5 MMIC Case Stvles Contd M7A-COM SEMICOND,BRLNGTON Cp Lg F-o7-St MA48700 Series GaAs Multiplier Varactors e DENOTES CATHODE INCHES 0.051 0.055 0.040 0.050 = 0.13 pF Typical = 0.40 nH Typical NOT TO SCALE MILLIMETERS 1,30 1,40 1,02 1,27 INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A 0.079 0.087 2,01 2,21 B 0.030 0.038 0,76 0,97 C 0.002 0.006 0,05 0,15 D 0.009 0.015 0,23 0,38 E 0.047 0.053 1,19 1,35 Cp = 0.23 pF Typical Lg = 0.20 nH Typical 120 126 << ree] | | I v : l 128 155 G DIA. | E DIA.p4 - x ~< A DIA. DIA. INCHES IN 0.077 0.083 0.0545 0.0675 0.022 0.028 0.0295 0.0325 0.002 0.007 0.010 0.015 Cp = 0.23 pF Typical Lg = 0.20 nH Typical o 0.043 0,026 0.022 0.007 0. 0.024 0.010 0.001 Cp = 0.13 pF Typical = 0.17 nH Typical MILLIMETERS I 1 1,715 0,71 0 0,18 0,38 0,076 M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464 8-41* MA48700 Series GaAs Multiplier Varactors Li D M@@ 5642214 0001407 7 MENIC ; J-07-11 Case Styles (Cont d) * DENOTES CATHODE NOT TO SCALE M/A-COM SEMICOND BRLNGTON 166 INCHES MILLIMETERS F A 0.043 0.047 1,19 t DIINDENT) B 0.026 0.033 0 C 0.029 0.031 0,79 D 0.001 0.002 0 E 0.010 0.016 0,44 F 0.006 0.008 0 Cp = 0.13 pF Typical Lg = 0.16 nH Typical 168 MIN. 0.079 0.084 0.008 0.028 0.028 0.024 0.024 H 0.049 Cp = 0.23 pF Typical DIA. lg = 0.20 nH Typical Ordering Information Orders for products from M/A-COM Semiconductor Products Operation should be placed with our local sales office. Should there be a need for factory sales or applications engineering assistance, contact M/A-COM directly. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464 8-42