DATA SH EET
Preliminary specification 2003 Oct 24
DISCRETE SEMICOND UCTORS
BLA0912-250
Avionics LDMOS transistor
book, halfpage
M3D379
2003 Oct 24 2
Philips Semiconductors Preliminary specification
Avi onics LDM OS trans istor BLA0912-25 0
FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
•Avionics transmitter applications in the
960 to 1215 MHz frequency range such as Mode-S,
TCAS and JTIDS, DME / TACAM.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT502A
PIN DESCRIPTION
1drain
2gate
3 source, connected to flange
handbook, halfpage
Top view
MBK394
1
23
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
Typical RF performance measured in common source class-AB circuit at PL= 250 W and 960 MHz to 1215 MHz
frequency band. Ths =25°; ZTH = 0.15 K/W; unless specified otherwise.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION VDS
(V) PL
(W) Gp
(dB) ∆Gp
(dB) ηD
(%) pD
(dB) tr
(ns) tf
(ns) zth j-h
(K/W) ϕR
(°)
tp=32µs; δ=0.1%;
TCAS: 1030 to 1090 MHz 36 250 14.0 0.8 50 0 25 6 0.07 ±5
tp= 100 µs; δ= 10 % 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5
tp= 128 µs; δ=2 %;
Mode-S: 1030 to 1090 MHz 36 250 13.5 0.8 50 0.1 25 6 0.15 ±5
tp= 340µs; δ=1 %;
Mode-S: 1030 to 1090 MHz 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5
tp= 3.3 ms; δ=22%;
JTIDS: 960 to 1215 MHz 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −75 V
VGS gate-source voltage −±22 V
Ptot total power diss ip ati on Ths ≤25 °C; tp=50µs; δ=2% −700 W
Tstg storage temperature −65 +150 °C
Tjjunc tion temperat ure −200 °C
2003 Oct 24 3
Philips Semiconductors Preliminary specification
Avionics LDMOS transistor BLA0912-250
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions; tp=100µs, δ=10%.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Zth j-h thermal impedance from junction
to heatsi nk Ths =25°C; note 1 0.18 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS =0; I
D=3mA 75 −−V
VGSth gate-s ource th reshold voltage VDS =10V; I
D= 300 mA 4 −5V
IDSS drain-source leakage current VGS =0; V
DS =36V −−1µA
IDSX on-state drain current VGS =V
GSth +9V; V
DS =10V 45 −−A
IGSS gate leakage current VGS =±20 V; VDS =0 −−1µA
gfs forward transconductance VDS =10V; I
D=10A −9−S
RDSon drain-source on-state resistance VGS =9V; I
D=10A −60 −mΩ
2003 Oct 24 4
Philips Semiconductors Preliminary specification
Avionics LDMOS transistor BLA0912-250
APPLICATION INFORMATION
RF performance in common source class-AB circuit. Ths = 25°C; ZTH = 0.15 K/W; unless specified otherwise.
Ruggedness in class-AB operation
The BLA091 2-250 is capable of wi thstanding a load mism atch corr esponding to VSWR = 5 : 1 through all pha ses under
the following conditions: VDS = 36 V; f = 960 to 1215 MHz at rated load power.
Typical impedance values
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTES
Supply voltage VDS −−36 V −
Frequency fR960 −1215 MHz −
Output power PL250 −− Wt
p = 100 µs - δ = 10%
Gain GP12 13 −dB @ POUT = 250 W
Drain efficiency ηD40 50 −%t
p = 100 µs - δ = 10%
Thermal impedance ZTH −−0.2 K/W tp = 100 µs - δ = 10%
Rise time tR−25 50 ns −
Fall time tF−625ns−
Pulse droop PD−0.1 0.5 dB tp = 100 µs - δ = 10%
Spurious - −−-60 dBc VSWRL 2 : 1
Operating Temp. Ths - 55 +70 °C−
FREQUENCY
(MHz) ZS
(Ω)ZL
(Ω)
960 0.89 −j1.70 1.53 −j1.13
1030 1.37 −j1.23 1.47−j0.99
1090 2.09 −j1.27 1.38 −j0.85
1140 2.40 −j1.97 1.30 −j0.71
1215 1.51 −j2.61 1.17 −j0.47
2003 Oct 24 5
Philips Semiconductors Preliminary specification
Avionics LDMOS transistor BLA0912-250
5
7
9
11
13
15
940 990 1040 1090 1140 1190 1240
f (MHz)
Gp
(dB)
5
15
25
35
45
55 ηD
(%)
ηD
G
P
Fig.2 Power gain and efficiency as functions of
load power; typical values.
Ths =25°C; VDS =36V; I
DQ = 150 mA; class-AB ;
tp=100µs; δ= 10%.
0
2
4
6
8
10
12
14
16
18
0 50 100 150 200 250 300
PL (W)
GP
(dB) (5)
(1)
(2)
(4) (3)
Fig.3 Power gain as a function of load power;
typical values.
Ths = 25 °C; VDS =36V; I
DQ = 150 mA; class-AB; tp=100µs; δ= 10%.
(1) f = 960 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
0
50
100
150
200
250
300
0 2 4 6 8 10 12 14 16
Pi (W)
PL
(W)
(5)
(2)
(1)
(4)
(3)
Fig.4 Load power as a function of Pi; typical
values.
Ths =25°C; VDS =36V; I
DQ = 150 mA; class-AB ; tp=100µs; δ= 10%.
(1) f = 960 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
0
10
20
30
40
50
60
0 50 100 150 200 250 300
PL (W)
ηD
(%) (5)
(1)
(3)
(2)
(4)
Fig.5 Efficiency as a function of load power;
typical values.
Ths =25°C; VDS =36V; I
DQ = 150 mA; class-AB ; tp=100µs; δ= 10%.
(1) f = 960 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
2003 Oct 24 6
Philips Semiconductors Preliminary specification
Avionics LDMOS transistor BLA0912-250
C1 C2 C3 C4 C5
R1
R2
C6 C7
C8 C9 C10
Fig.6 Component layout for class-AB test circuit.
List of components for class-AB test circuit (see Fig.6)
Note:
Layout files available on internet in gerber and dxf format.
COMPONENT DESCRIPTION VALUE
C1 ATC 100B 1 nF
C2 ATC 100A 22 pF
C3 ATC 100B 1 nF
C4 KEMET P/N T491D476M020AS 47 µF
C5 ATC 100A 56 pF
C6 ATC 100A 22 pF
C7 ATC 100A 47 pF
C8 KEMET P/N T491D226M020AS 22 µF
C9 ATC 100B 1 nF
C10 ATC 100A 22 pF
R1 SMD 0805 51 Ω
R2 Philips 2333 156 14999 49.9 Ω
PCB Material Rodgers Duroid 6010.
εR = 10.2; d = 0.64 mm
2003 Oct 24 7
Philips Semiconductors Preliminary specification
Avionics LDMOS transistor BLA0912-250
PCB INFO
PCB Material: Rodgers Duroid 6010. ÉR = 10.2; Thickness 0.64 mm.
L1 C1 L2 L3 C2 L4 C3 C4 L5 L6 C5 L7 L8
Input circuit.
L1 : 5 mm x 0.8 mm
C1: 1.2 mm x 3.5 mm
L2: cap . pad : 1 mm x 1mm (1x)
curve: width 0.8 mm, angle 90°, radius 0.8 mm (10x)
vertical: 3.9 mm x 0.8 mm (2x)
vertica l: 9.4mm x 0.8 mm (3x)
horizonta l: 0.5 mm x 0.8 mm (4x)
L3 : 3 mm x 2 mm
C2: 4 mm x 6.5 mm
L4 : 5 mm x 1 mm
C3: 8.8 mm x 30 mm + 0.2 mm x 1 3 mm
Output circu i t.
C4: 0.2 mm x 13 mm + 19 mm x 17.1 mm
L5: 2.5 mm x 2.3 mm
L6 : 4 mm x 1 mm
C5: 3 mm x 6.6 mm
L7: curve: width 0.8 mm, angle 90°, radius 0.8 mm (6x)
vertical: 2.2 mm x 0.8 mm (2x)
vertical: 6 mm x 0.8 mm (1 x)
horizon tal: 1 mm x 0.8 mm (2x)
L8: 2.5 mm x 0.8 mm λ/4-line
curve: width 1 mm, angle 90°, radius 0.8 mm
vertical: 5 mm x 1 mm
horizontal: 19 mm x 1 mm
tapered line: WI = 1 mm, L = 12 mm, angle = 60°
2003 Oct 24 8
Philips Semiconductors Preliminary specification
Avionics LDMOS transistor BLA0912-250
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502
A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
2003 Oct 24 9
Philips Semiconductors Preliminary specification
Avionics LDMOS transistor BLA0912-250
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sh eets describ ing multipl e type numbers , the highes t-level produc t status dete rmines the data sh eet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specific ation Th e data in a short-form
specification is extracted from a full data sheet with the
same t ype number and title. For de tai le d information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress rat ings only and operatio n of the devic e
at these or at any other conditions above those given in
the Characteristics sections of the specification is not
impli ed. Expo sur e to limi tin g values for extend ed peri ods
may affect devic e reliability .
Application information Applicatio ns that ar e
described herein for any of these products are for
illus t r ati ve purposes only. Philips Sem ic ond uc tor s make
no representation or warranty that such applications will
be suitab le for the specifi ed use without furt her tes ting or
modification.
DISCLAIMERS
Life support applications Th ese pr oducts are not
designed for use in life support appliances, devices, or
systems where ma lfunction of these pr oducts can
reasonably be expected to result in personal injury.
Philips Semi c onductor s customers us ing or selling these
products for use in such applications do so at their own
risk and agree to fully indemnify Philips Semiconductors
for any damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in o rd er to i mpr o ve design
and/or performance. When the product is in full
produc tion ( status ‘ Produ ct ion’) , rel evant chan ges wi ll be
commu ni ca t ed v ia a Cus tomer Prod uc t/Pr o cess Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this doc um ent does not form part of any quota tion or contract, is believed to be accur ate and reliable and may be changed
without notice. No liability will be accepte d by the publisher for any consequence of its use. Publication thereof does not conv ey nor imply any licens e
under patent - or ot her industrial or intellectual pro pert y rights.
Philips Semiconductors – a worldwide company
Contact information
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Printed in The Netherlands 613524/06/pp11 Date of release: 2003 Oct 24 Document orde r numb er: 9397 750 12224
