R.1.120799
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GHz Technology Inc. 3000 Oakmead Vil lage Dri ve, Santa Clar a, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ITC1100
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The ITC1100 is a common base bipolar transistor. It is designed for pulsed
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
CASE OUTLINE
55SW, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation1 @25°C (Pd) 3400 W
Ther mal Resista nce 1 (θJC).08°C/W
Voltage and Current
Collector-Base Voltage 65V
Emitter-Base Voltage 3.5V
Collector Current180A
Temperatures
Storage Temperature -40 to +150°C
Ope rating Junction Temper ature 1+200°C
ELECTRICAL CHAR ACTE R ISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST
CONDITIONS MIN TYP MAX UNITS
BVebo2Emitter - Bas e Breakdown(open) Ie=50mA 3.5 V
BVces Collector-Emitter Breakdown(shorted) Ic=30mA 65 V
BVceo2Collector-Emitter Breakdown (open) Ic=30mA 30 V
hFE2DC Cu rre nt Gain Ic=5A, Vc e=5V 20 100 β
FUNCTIONAL CHARACTERISTICS @ 25 °C
GPB Commo n Bas e Po we r Gain Vcc = 50 V , F = 1030MHz,
Pout=1000W Peak Min, PW=1µS, DF=1% 10 10.5 dB
ηcCollector Efficiency Vcc = 50 V , F = 1030MHz,
Pout=1000W Peak Min, PW=1µS, DF=1% 45 50 %
trRise Time Vcc = 50 V , F = 1030MHz,
Pout=1000W Peak Min, PW=1µS, DF=1% 50 80 nS
VSWR Ou tput Load Mism atch Vcc = 5 0V, F = 1030MHz,
Pout=1000W Peak Min, PW=1µS, DF=1% 4:1 Ψ
Zin Series Input Impedance (Circuit
source impedance @ test cond.) Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1µS, DF=1% 0.89 – j2.3 Ω
Zout Series Output Impedance (Circuit
load im pe dance @ test co nd .) Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1µS, DF=1% 0.54 - j2.64 Ω
1 At rated output power and pulse conditions
2 Not measurable due to EB Returns