Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -15
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -12 A
IDM Pulsed Drain Current -60
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW /° C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
02/09/06
www.irf.com 1
IRF7425PbF
HEXFET® Power MOSFET
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLead-Free
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
VDSS RDS(on) max (mW) ID
20V 8.2@VGS = -4.5V -15A
13@VGS = -2.5V -13A
SO-8
PD- 96062
IRF7425PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 12 0 180 ns TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 16 0 240 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-60
-2.5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.010 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 8.2 VGS = -4.5V, ID = -15A
––– ––– 13 VGS = -2.5V, ID = -13A
VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 44 ––– ––– S VDS = -10V, ID = -15A
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– –– – 100 VGS = 12V
QgTotal Gate Charge –– – 8 7 130 ID = -15A
Qgs Gate-to-Source Charge ––– 18 27 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V
td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V
trRise Time ––– 20 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 230 ––– RG = 6.0Ω
tfFall Time ––– 160 ––– VGS = -4.5V
Ciss Input Capacitance ––– 7980 ––– VGS = 0V
Coss Output Capacitance ––– 1480 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 98 0 ––– ƒ = 1.0kHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Surface mounted on 1 in square Cu board, t ≤ 10sec.
IRF7425PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.0V
0.1
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.0V
0.1
1
10
100
1.0 1.2 1.4 1.6 1.8 2.0 2.2
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperatu re( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-15A
IRF7425PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
040 80 120 160
0
2
4
6
8
Q , To tal Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-15A
V =-10V
DS
V =-16V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
1 10 10
0
0
2000
4000
6000
8000
10000
12000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1M Hz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
IRF7425PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
3
6
9
12
15
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(T H ER M AL R ESPONSE)
IRF7425PbF
6www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
V
G
Charge
D.U.T. VD
S
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
1.0 2.0 3.0 4.0 5.0
-VGS, Gate -to -S ource Voltage (V)
0.005
0.010
0.015
RDS(on), Drain-to -Source On Resistance (Ω)
ID = - 15A
0 102030405060
-ID , Drain Current (A)
0.005
0.006
0.007
0.008
0.009
0.010
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -2.5V
VGS = -4.5V
IRF7425PbF
www.irf.com 7
Fig 15. Typical Vgs(th) Variance Vs.
Juction Temperature Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Tem perature ( °C )
1.5
2.0
2.5
3.0
-VGS(th) , Variace ( V )
ID = -250µA
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
0
20
40
60
80
100
120
Power (W)
IRF7425PbF
8www.irf.com
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
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IRF7425PbF
www.irf.com 9
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLI NG DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEE D DIRE CT I O N
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8. 1 ( .3 18 )
7. 9 ( .3 12 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
