New Product MBR60100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES * Guardring for overvoltage protection TO-220AB * Low power losses, high efficiency * Low forward voltage drop * High forward surge capability * High frequency operation 1 2 * Solder dip 260 C, 40 s 3 PIN 1 PIN 2 PIN 3 CASE * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 30 A x 2 VRRM 100 V IFSM 350 A VF at IF = 30 A 0.64 V TJ max. 175 C MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SYMBOL MBR60100CT UNIT Maximum repetitive peak reverse voltage PARAMETER VRRM 100 V Working peak reverse voltage VRWM 100 V Maximum DC blocking voltage VDC 100 V IF(AV) 60 30 A IFSM 350 A Peak repetitive reverse current per diode at tp = 2 s, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 s waveform) ERSM 25 mJ Maximum average forward rectified current total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy per diode at 25 C, IAS = 1.0 A, L = 40 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 88892 Revision: 19-May-08 EAS 20 mJ dV/dt 10 000 V/s TJ, TSTG - 65 to + 175 C For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product MBR60100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Instantaneous forward voltage per diode (1) Reverse current per diode (2) IF = 30 A IF = 60 A SYMBOL TJ = 25 C TJ = 125 C VR = 100 V TJ = 25 C TJ = 125 C MAX. 0.78 0.92 0.82 1.0 0.64 0.78 0.69 0.83 8.0 8.5 100 20 UNIT V VF IF = 30 A IF = 60 A TYP. IR A mA Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR60100CT UNIT RJC 0.5 C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB MBR60100CT-E3/45 UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 2.068 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 400 60 Average Forward Current (A) Average Forward Current (A) 70 50 40 30 20 10 0 300 200 100 0 0 www.vishay.com 2 25 50 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88892 Revision: 19-May-08 New Product MBR60100CT Vishay General Semiconductor 10 000 TJ = 175 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 150 C TJ = 125 C 1 TJ = 25 C 0.1 1000 100 0.01 0 0.2 0.4 0.6 0.8 0.1 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 1 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 100 000 TJ = 175 C 10 000 TJ = 150 C 1000 TJ = 125 C 100 10 1 TJ = 25 C 0.1 0.01 0.1 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. 0.185 (4.70) 0.169 (4.30) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.055 (1.40) 0.049 (1.25) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331 (8.40) TYP. 0.638 (16.20) 0.598 (15.20) 0.634 (16.10) 0.618 (15.70) PIN 1 2 3 0.370 (9.40) 0.354 (9.00) 1.161 (29.48) 1.106 (28.08) 0.118 (3.00) TYP. 0.523 (13.28) 0.507 (12.88) 0.102 (2.60) 0.087 (2.20) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. Document Number: 88892 Revision: 19-May-08 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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