New Product
MBR60100CT
Vishay General Semiconductor
Document Number: 88892
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High Voltage Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 30 A x 2
VRRM 100 V
IFSM 350 A
VF at IF = 30 A 0.64 V
TJ max. 175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
123
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR60100CT UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Working peak reverse voltage VRWM 100 V
Maximum DC blocking voltage VDC 100 V
Maximum average forward rectified current total device
per diode IF(AV)
60
30 A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 350 A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) ERSM 25 mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.0 A, L = 40 mH EAS 20 mJ
Voltage rate of change (rated VR) dV/dt 10 000 V/µs
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
New Product
MBR60100CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88892
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode (1)
IF = 30 A
IF = 60 A TJ = 25 °C
VF
0.78
0.92
0.82
1.0
V
IF = 30 A
IF = 60 A TJ = 125 °C 0.64
0.78
0.69
0.83
Reverse current per diode (2) VR = 100 V TJ = 25 °C
TJ = 125 °C IR 8.0
8.5
100
20
µA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR60100CT UNIT
Typical thermal resistance per diode RθJC 0.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR60100CT-E3/45 2.068 45 50/tube Tube
Figure 1. Forward Derating Curve
0
20
0 25 50 100 125 150 175
30
40
50
60
70
Average Forward Current (A)
10
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
100
200
300
10010
1
Number of Cycles at 60 Hz
Average Forward Current (A)
400
New Product
MBR60100CT
Vishay General Semiconductor
Document Number: 88892
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
0.1
0.01
0 0.2 0.4 0.6 0.81.0
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
TJ = 150 °C
1
0.1
10
100
1000
10 000
10020100 30405060708090
Percent of Rated Peak Reverse Voltage (%)
100 000
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
10 000
0.1 1 10 100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
0.1
0.01
1
110 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
TO-220AB
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.047 (1.20) 0.343 (8.70)
TYP.
0.067 (1.70)
TYP.
0.331 (8.40)
TYP.
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.634 (16.10)
0.618 (15.70)
PIN
23
1
0.118 (3.00)
TYP.
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.100 (2.54)
TYP.
0.638 (16.20)
0.598 (15.20)
0.055 (1.40)
0.049 (1.25)
0.185 (4.70)
0.169 (4.30)
0.154 (3.90)
0.138 (3.50)
0.370 (9.40)
0.354 (9.00)
0.523 (13.28)
0.507 (12.88)
0.102 (2.60)
0.087 (2.20)
1.161 (29.48)
1.106 (28.08)
0.024 (0.60)
0.018 (0.45)
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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