SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * SOT-363 A Dual N-Channel MOSFET Low On-Resistance G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed S2 G2 Low Input/Output Leakage D1 G H Ultra-Small Surface Mount Package Available in Lead Free/RoHS Compliant Version (Note 2) K M Mechanical Data J * * Case: SOT-363 * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * * Terminal Connections: See Diagram D F L Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 D2 G1 S1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 3/4 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0 8 All Dimensions in mm Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 S2 G2 D1 Marking (See Page 2): K72 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings @ TA = 25C unless otherwise specified Symbol 2N7002DW Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS 1.0MW VDGR 60 V VGSS 20 40 V ID 115 73 800 mA Pd 200 1.60 mW mW/C RqJA 625 C/W Tj, TSTG -55 to +150 C Gate-Source Voltage (Note 1) Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100C Pulsed Total Power Dissipation Derating above TA = 25C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30120 Rev. 6 - 2 1 of 3 www.diodes.com 2N7002DW a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 60 70 3/4 V VGS = 0V, ID = 10mA IDSS 3/4 3/4 1.0 500 A VDS = 60V, VGS = 0V IGSS 3/4 3/4 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 3/4 2.0 V VDS = VGS, ID = 250mA RDS (ON) 3/4 3.2 4.4 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 3/4 A VGS = 10V, VDS = 7.5V gFS 80 3/4 3/4 mS Input Capacitance Ciss 3/4 22 50 pF Output Capacitance Coss 3/4 11 25 pF Reverse Transfer Capacitance Crss 3/4 2.0 5.0 pF Turn-On Delay Time tD(ON) 3/4 7.0 20 ns Turn-Off Delay Time tD(OFF) 3/4 11 20 ns OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25C @ TC = 125C Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 25C @ Tj = 125C On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Ordering Information (Note 4) Notes: Device Packaging Shipping 2N7002DW-7 SOT-363 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: 2N7002DW-7-F. Marking Information YM K72 K72= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K72 YM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30120 Rev. 6 - 2 2 of 3 www.diodes.com 2N7002DW 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 0.6 Tj = 25C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 1.5 VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature DS30120 Rev. 6 - 2 3 of 3 www.diodes.com 5 4 ID = 50mA ID = 500mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 2N7002DW