MICROWAVE POWER GaAs FET TIM7785-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=6.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G ( Ta= 25C ) CONDITIONS UNIT dBm MIN. 35.5 dB 5.5 6.5 A dB % dBc -42 1.1 1.3 0.6 A C 1.1 UNIT S MIN. MAX. TYP. 900 V -1.0 -2.5 -4.0 A 2.6 V -5 C/W 4.5 6.5 VDS= 10V f = 7.7 to 8.5GHz add IM3 IDS2 Tch Two-Tone Test Po=25.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) TYP. MAX. 36.5 32 -45 1.3 80 Recommended Gate Resistance(Rg) : 150 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50mA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm ( Ta= 25C ) VGSoff The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM7785-4SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 3.5 Total Power Dissipation (Tc= 25 C) PT W 23.1 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-60SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V 38 IDS1.1A Pin=30.0dBm 37 36 35 7.7 7.9 8.1 8.3 8.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 39 freq.=8.5GHz 37 VDS=10V IDS1.1A 80 Pout Pout(dBm) 36 70 35 60 34 50 add 33 40 32 30 31 20 30 10 26 28 30 Pin(dBm) 3 32 add(%) 38 TIM7785-60SL Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 200 100 0 0 40 80 120 160 200 40 42 Tc( C ) IM3 vs. Power Characteristics -10 VDS=10V IDSset9.5A -20 freq.=8.5GHz f=5MHz IM3(dBc) -30 -40 -50 -60 32 34 36 38 Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET TIM7785-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL ( Ta= 25C ) CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 35.5 36.5 dB 7.5 8.5 A 1.1 1.3 Compression Point Power Gain at 1dB Gain VDS= 10V G1dB Compression Point IDSset=0.9A f = 7.7 to 8.5GHz Drain Current IDS1 Gain Flatness G dB 0.6 Power Added Efficiency add % 35 3rd Order Intermodulation IM3 dBc -44 -47 Distortion Drain Current Channel Temperature Rise Two-Tone Test Po= 25.5dBm IDS2 (Single Carrier Level) A 1.1 1.3 Tch (VDS X IDS + Pin - P1dB) C 80 UNIT mS MIN. V -1.0 -2.5 -4.0 A 2.6 V -5 C/W 4.5 6.0 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A Rth(c-c) Channel to Case TYP. MAX. 900 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2009 TIM7785-4UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 3.5 Total Power Dissipation (Tc= 25 C) PT W 25 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-4UL RF PERFORMANCE Output Power vs. Frequency 39 VDS= 10V IDS 1.1A Pin= 28.0dBm 37 36 35 34 7.4 7.6 7.8 8 8.2 8.4 8.6 8.8 Frequency (GHz) Output Power vs. Input Power 40 90 f= 8.1GHz VDS= 10V IDS 1.1A 39 80 38 70 Po 37 60 36 50 add 35 40 34 30 33 20 32 10 31 0 22 24 26 28 Pin (dBm) 3 30 32 add (%) Po (dBm) Po (dBm) 38 TIM7785-4UL Power Dissipation vs. Case Temperature 30 P T (W) 20 10 0 0 40 80 1 20 16 0 20 0 Tc () IM3 vs. Output Power Characteristics -20 VDS= 10V IDS 1.1A f= 8.1GHz f= 5MHz IM3 (dBc) -30 -40 -50 -60 21 23 25 27 29 Po(dBm), Single Carrier Level 4 31