International Rectifier HEXFET Power MOSFET PD-9.1069 IRF840LC * Ultra Low Gate Charge * Reduced Gate Drive Requirement Enhanced 30V Ves Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Vgg = 500V Aston) = 0.850 s Ip = 8.0A Description This new seties of Low Charge HEXFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, tha device improvements are ach:eved without added product cost, allowing for reduced gate drive requirements anc total system savings. In addition, teduced switching losses and imoroved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high currant are possible using the new Low Charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristc of HEXFETs offer ihe designer a new standard in power transistors for switching applications. Absolute Maximum Ratings . Parameter Max. Units @Tc= 25C | Continuous Drain Gurrent_ Vas @ 10 V 80 5 @ To = 100C | Continuaus Crain Gurrent Ves @ 10V 5.4 A Jom Pulsed Drain Currant_ 28 Pp @ To = 25C | Power Dissipation 125 Ww Linear Darating Facior 1.0 Whe Vos Gate-to-Source Vcltage 30 v | Eas : Singie Pulse Avalanche Energy 510 md AR Avalanche Current 8.0 A Ear Repetrtive Avalanche Energy 13 mJ dvi Peak Diooe Recovery dv/dt_ @ 3.5 Vins Ty Operating Junction and -65 to +160 Ts1G Storage Temperature Range c _ Soldering Temperature, tor 0 seconds Maunting Torque, 6-32 or M3 screw 300 (1.6mm trom case) : 10 Ibfan (1.1 Nem} | Thermal Resistance . Parameter Min. Typ. Max. Units lac - Junction-to-Case _ 100 Racs Case-to-Sink, Flat, Greased Surlace ~ 0.50 = CAN ; asa Juncton-to-Ambient _- = 62IRF840LC [TOR/ Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. Typ. [ Max, Units Test Conditions 1 Vieross | Drain-io-Source Breakdown Vollage 500 | | V_| Ves=0V, n= 250A | AVenpss/ATs Breakdown Vcllage Temp. Coetticient =~ | 063 | - VPC | Reference to 25C. Ip= imA Rosion Static Drain-to-Source On-Resistance _ (085 2 [Vesxl0, lond BA Vasini Gate Threshaid Vaitage 2.0 ~ | 40 | V_ [Vos-Ves, lo= 250uA Os Forward Transconduclance 4.0 = 1 = | 8 [Vos=50V, i4.8A _ | [!2ss Drain-to-Source Leakage Current = = = 7 yA Mesa aay Tato Nee | Gate-+to-Source Forward Leakage _~ = 100 nA Vos=20V + Gale-to-Source Reversa Leakage ! - ~100 VYas=-20V _ Q. _._ | Total Gate Charge j~- a9 lp=B.DA a, Gale-to-Source Charge _ =~. ~~ [| 10 | % Vos=400 1 Qoy ! Gale-to-Dran "Miller") Gharoe ~ -_| 419 _Vas=10V See Fig. Sand 13 @ | tao) | Tum-On Delay Time wi-., | Voo=250V & Rise Time [=~ 2] = 1 (p=8.0A { taoty Tum-O Delay Time [a] } Ra=9.12 iM | Fall Time ~ Wi Ro=3GQ See Figure 10@ ' 1 Between lead, Lo Internal Orain inductance _~ | 45) 8 mm (0.25in} a -_ 0H | from package jo ks Intarna! Source inductance ~' 75) = and center of A : die contact 4 Het anaes e0 | | Vas=0V Cass ! Output Capacitance | 27) SF pase 25V | Cissy Aeverge Transier Capacitance - | we | =| '=10MHz See Figure Source-Drain Ratings and Characteristics | . Parameter Min, | Typ. Max. | Units | Test Conditions Is "Continuous Source Current | _ ao MOSFET sympol =? (Body Diode) . showing the (a ! hsv Pulsed Source Current ~ | | 2 | integral reverse dag (Body Diode) ! p-n junction diode. s {Vso Diode Forward Voltage ~ = | 20 | V__Ty=25C, lgn8.0A, VaseOV " Reverse Recovery Time _ | ~ 1; 490 | 740! ns 1T.=25C. IrnB.DA Qn Reverse Racovery Charge P= [30 | 45 pC jdiktet00Aus ton Forward Tum-On Time Intrinsic :urs-on time Is neglegiole (lum-on is dominated by Ls+Ln) Notes: Repetitive rating; pulse width limited by max. junction temperature (See Figure 11) @ Vpo=h0V, starting Ty=25C, L=14mH Ria=252, las=8.0A (See Figure 12) @D Isns8.0A, didts100A/us, VonosVieriDss. Tas150C Pulse width < 400 ps; dusty cycle <2%,5 Ip, Drain Gurrent (Amps) 1p, Dra'n Gurrent (Amps) 1 wl 193 Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristtcs, Tc=25C vag = 50V DULSE WITH a 9 a & Ic Vigg, Gate-to-Source Voltage (voits) Fig 3. Typical Transfer Characteristics Aipsion): Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRF840LC 2.9 son! Tug tc: Vos, Drain-to-Source Valtage (volts) Fig 2. Typical Output Characteristics, To=150C vag > 10N ley -09 -29 6 27 43 bY Be eo Les 160 180 7), Junction Temperature (C) Fig 4. Normal:zed On-Resistance Vs. TemperatureIRF840LC = 4004 a 250" qe 7 100% ei Capacitance (pF) Vas. Gate-to- Source Voltage (volts) n SEE FIGJAE 13 : . * a3 Vos, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage QOEAATICN TN HES AREA LM ITED BY Pas ion: Isp, Reverse Drain Current (Amps) Ip, Drain Currant (Amps) Veg = Ov a : 3 rr 1.6 ar "t 1 198 Yep, Source-to-Drain Vallage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward VoltageBl tp, Drain Current (Amps) IRF840LC D.U.T. Voo \}tov Pulse Width s tps Duty Factor s 0.1% ae Yos 10% 25 59 75 300 129 15 Vas Tc, Case Temperature (C) tony tdfom) tt Fig9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 15 3 g wv o i we Cc & Q a vO z E sy fs - a z cian > 1 sof BING 2 Pa Se uotes: ad ITHERMAL. RESPCNSE 1 CUTY FACTOR BMta/t2 | ' 2 FSQK TeePpw xX Zener be 10 :o8 ore 10? sc? 34 413 t), Rectangular Puise Duration (seconds) Fig 11. Maximum Effective Transient Thermal impedance, Junction-to-CaseIRF840LC [TOR vary tan Vos i g 0.01a 0c 400 20 e Cc a o q 2 e 2 o o B Oo vf 3 S Eas, Sinyle Pulse Energy (mJ) = 50v a) Vos 2s gc 75 100 125 15 Starting Ty, Junction Temperature(C) as Fig 12c. Maximum Avalanche Energy Fig 12b. Unciamped Inductive Waveforms Vs. Drain Gurrent Currant Reguiator Rage Tye os DTT [tT 3 a tev S2uF rT pu | gg | : L uF - as +- Gap PU 10 Vas Ve RENO Ig = | Charge unrest gampling hesions Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Part Marking InformationAppendix A IRF840LC Peak Diode Recovery dv/dt Test Circuit DUT. + Cireull Layout Consicerations ke * Low Stray Inductance Fig 14. For N-Channel ie) . Ground Plane . eakage Inductance HEXFETS Curent Transiormer =< +, 4 w . Y Driver ve Re 4 + dv/dt controlled by Rg Driver same type as 0.U.T, = Voo * Ign controwed by Duty Facior "D" T * D.U.T.- Device Under Test ( D Driver Gate Orive oy aod - & 0.U.T. Isp Wavetorm ? Reverse Current @ D.UT. Vps Waveform b satge| @ Inductor Current (eS[RF840LC IGR, _ Package Outline Appendix B TO-220AB Outline Dimensions are shown in millimeters finches) 0 541.418) B- . 1.039 1205) p 378 (3s; 4.69 (.185) 2.87 (.113) | a 4.20 (185) roe 1.32 (.052) 2.62 (-103) I "TI 122 (oa) 6.47 (.255) 6.10 (240) 15.2@ (600) I 14.84 (584) : 4 4} 1.15 (.045) LEAD ASSIGNMENTS 1 ais WIN 1- GATE } do. 2+ DRAIN | : 4 - SOURCE | J 4- DRAIN 14.08 ( 665} ! ; 4.06 (.180} 13 47 (530) I. | 385 (140) yy fan am | 0.93 4.037) 0.83 (.022) i) om bee UX ae ax 1406058) 0.49 .027) 0.46 (.018) 1.18 (048) @/ 0.38 (.014) Oa Bi AW |_ 2.92 6115) 2.64 (104) 2.54 (100) - = MOTES: TR a 1 OMENSIONING & TOLERANCING PER ANSI Y14 SM, 1962 2? CONTROLUNG DIMENBION -IKCH, Part Marking Information TO-220AB EXAMPLE: THIS IS AN IRFt010 WITH ASSEMBLY LOT CODE 981M 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-A8 4 WHEATSINK & LEAD MEASUREMENTS 00 NOT INCLUDE BURAS. Appendix C f QO Q i INTERNATIONAL a PART NUMBER RECTIFIER Le IRF1019 4 TOR 9246 nl DATE CODE ASSEMBLY | crm LOT CODE : V = YEAR WW WEEK Printad on Signet racyoled otfser: ; ; nade trom 50% recycied wasie pape. including "Oe de-invied, post-consumer wasta eb itor]Rectifier 23:3 Kansag St. El Segundo, California 90245 Tel: (3'0) 322-393", Twa 4720403 0 HEADQUARTERS: EUROPEAN HEADQUARTERS. Wurst Gener, Oxted, Surey RHO 998 England, Fal: (D889) 713015, Tex. 96219 WICAMADA: 101 Berttay St. Markham, Qutaco L3A SLI, Tht. (416)475-1907, 0 GERMANY: Saslomysnses 157 D-5380 Gad |. Te, 6172-S7UGE. 1A ATARY: Vig Liguria 49 10071 Borgara. lores. Tal: (071)47) 1404. IDRAR EAST KH Budding, 30-4 Nieheerbu Kune Crome, Joshi bokyo 17? Japan. 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