SMA6J5.0A - Vishay Presicion Group

New Product

SMA6J5.0A thru SMA6J28A

Vishay General Semiconductor

Document Number: 89115

Revision: 30-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Surface Mount Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Available in uni-directional polarity only

• Excellent clamping capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

VWM 5.0 V to 28 V

PPPM (10 x 1000 µs) 600 W

PPPM (8 x 20 µs) 4000 W

PD at TA = 50 °C 4 W

IFSM 50 A

TJ max. 150 °C

DO-214AC (SMA)

Notes:

(1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 °C per Fig. 2.

(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Peak pulse power dissipation with 10/1000 µs waveform (1)(2)

with 8/20 µs waveform PPPM 600

4000 W

Peak pulse current with 10/1000 µs waveform (1)(2)

with 8/20 µs waveform IPPM See next table A

Power dissipation on infinite heatsink, TA = 50 °C PD 4.0 W

Peak forward surge current 8.3 ms single half sine-wave IFSM 50 A

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

New Product

SMA6J5.0A thru SMA6J28A

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89115

Revision: 30-Oct-08

Notes:

(1) Pulse test: tp ≤ 50 ms

(2) To calculate maximum clamping voltage at other surge currents, use the following formula

VCLmax. = RD x IPP + VBRmax.

(3) To calculate VBR vs. junction temperature, use the following formula

VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))

(4) VF = 3.5 V at IF = 25 A, pulse test: 300 µs pulse width

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER

VWM Stand-off voltage

VBR Breakdown voltage

VCClamping voltage

IDLeakage current at VWM

IPP Peak pulse current

αT Voltage temperature coefficient

VFForward voltage drop

RDDynamic resistance

VBR

VWM

IPP

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

DEVICE

MARKING

CODE

BREAKDOWN

VOLTAGE

VBR AT IT (1)

MAXIMUM

REVERSE LEAKAGE

ID AT VWM

VC AT IPP RD (2) VC AT IPP RD (2) αT (3)

10/1000 µs 8/20 µs

MIN. MAX. 25 °C 85 °C MAX. MAX. MAX.

V mA µA V V A Ω V A Ω 10-4/°C

SMA6J5.0A 6AE 6.40 7.07 10 150 375 5.0 9.1 65.9 0.031 13.4 298 0.021 5.7

SMA6J6.0A 6AG 6.70 7.41 10 600 1500 6.0 9.5 63.2 0.033 13.7 290 0.022 5.9

SMA6J6.5A 6AK 7.20 7.96 10 100 250 6.5 10.2 58.8 0.038 14.5 276 0.024 6.1

SMA6J7.5A 6AP 8.33 9.21 1 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5

SMA6J8.0A 6AR 8.89 9.83 1 20 50 8.0 12.5 48.0 0.056 18.2 220 0.038 7.0

SMA6J8.5A 6AT 9.4 10.4 1 20 50 8.5 13.3 45.1 0.064 18.7 205 0.040 7.3

SMA6J10A 6AX 11.1 12.3 1 0.2 1 10 15.7 38.2 0.089 19.6 184 0.040 7.8

SMA6J11A 6AZ 12.2 13.5 1 0.2 1 11 17.2 34.8 0.107 21.5 172 0.047 8.1

SMA6J12A 6BE 13.3 14.7 1 0.2 1 12 18.8 31.9 0.128 23.5 157 0.056 8.3

SMA6J13A 6BG 14.4 15.9 1 0.2 1 13 20.4 29.4 0.153 23.9 147 0.054 8.4

SMA6J15A 6BM 16.7 18.5 1 0.2 1 15 23.6 25.4 0.201 27.7 123 0.075 8.8

SMA6J16A 6BP 17.8 19.7 1 0.2 1 16 25.2 23.8 0.229 29.5 119 0.083 8.8

SMA6J17A 6BR 18.9 20.9 1 0.2 1 17 26.7 22.5 0.259 31.4 111 0.094 9.0

SMA6J18A 6BT 20.0 22.1 1 0.2 1 18 28.3 21.2 0.292 33.2 102 0.109 9.2

SMA6J20A 6BV 22.2 24.5 1 0.2 1 20 31.4 19.1 0.361 36.8 93 0.132 9.4

SMA6J22A 6BX 24.4 26.9 1 0.2 1 22 34.5 17.4 0.437 40.4 89 0.152 9.5

SMA6J24A 6BZ 26.7 29.5 1 0.2 1 24 37.8 15.9 0.523 44.3 80 0.185 9.6

SMA6J26A 6CE 28.9 31.9 1 0.2 1 26 40.9 14.7 0.614 47.9 75 0.213 9.7

SMA6J28A 6CG 31.1 34.4 1 0.2 1 28 44.0 13.6 0.704 51.6 68 0.253 9.8

New Product

SMA6J5.0A thru SMA6J28A

Vishay General Semiconductor

Document Number: 89115

Revision: 30-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Note:

(1) Mounted on minimum recommended pad layout

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Typical thermal resistance, junction to ambient (1) R

θJA 120 °C/W

Typical thermal resistance, junction to lead RθJL 25 °C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SMA6J5.0A-E3/61 0.064 61 1800 7" diameter plastic tape and reel

SMA6J5.0A-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel

Figure 1. Peak Pulse Power Rating Curve

Figure 2. Pulse Power or Current vs. Initial Junction Temperature

Pulse Width (µs) - ½ I

Exponential Waveform

100

0.1

0.1 10 10 000

PPM

- Peak Pulse Power (kW)

1 100 1000

TJ - Initial Temperature

100

075 200

Peak Pulse Power (P

) or Current (I

)

Derating in Percentage (%)

25 100 150

50 125 175

Figure 3. Pulse Waveform

Figure 4. Typical Junction Capacitance

t - Time (ms)

150

0 2.0 4.0

PPM

- Peak Pulse Current (%) I

RSM

100

1.0 3.0

Peak Value

IPPM

Half Value -

IPPM

IPP

TJ = 25 °C

Pulse Width (td)

is defined as the Point

where the Peak Current

decays to 50 % of IPPM

tr = 10 µs

tr = 8 µs

td = 1000 µs

td = 20 µs

Reverse Voltage (V)

10 000

100

110100

- Junction Capacitance (pF)

1000

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

Measured at Stand-off

Voltage VWM

Measured at Zero Bias

New Product

SMA6J5.0A thru SMA6J28A

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89115

Revision: 30-Oct-08

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 5. Typical Forward Characteristics

Reverse Voltage (V)

100

0.01

0.4 0.5 1.5

- Junction Capacitance (pF)

SMA6J5.0A ~ SMA6J8.0A

TA = 150 °C

0.1

1.41.31.21.11.00.90.80.70.6

SMA6J5.0A ~ SMA6J28A

TA = 25 °C

SMA6J8.5A ~ SMA6J28A

TA = 150 °C

Figure 6. Typical Transient Thermal Impedance

t - Pulse Duration (s)

1000

0.1

0.001 0.01 1000

Transient Thermal Impedance (°C/W)

100

1001010.1

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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