New Product
SMA6J5.0A thru SMA6J28A
Vishay General Semiconductor
Document Number: 89115
Revision: 30-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Available in uni-directional polarity only
• Excellent clamping capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
VWM 5.0 V to 28 V
PPPM (10 x 1000 µs) 600 W
PPPM (8 x 20 µs) 4000 W
PD at TA = 50 °C 4 W
IFSM 50 A
TJ max. 150 °C
DO-214AC (SMA)
Notes:
(1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 °C per Fig. 2.
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with 10/1000 µs waveform (1)(2)
with 8/20 µs waveform PPPM 600
4000 W
Peak pulse current with 10/1000 µs waveform (1)(2)
with 8/20 µs waveform IPPM See next table A
Power dissipation on infinite heatsink, TA = 50 °C PD 4.0 W
Peak forward surge current 8.3 ms single half sine-wave IFSM 50 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
New Product
SMA6J5.0A thru SMA6J28A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89115
Revision: 30-Oct-08
2
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) To calculate maximum clamping voltage at other surge currents, use the following formula
VCLmax. = RD x IPP + VBRmax.
(3) To calculate VBR vs. junction temperature, use the following formula
VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
(4) VF = 3.5 V at IF = 25 A, pulse test: 300 µs pulse width
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
VWM Stand-off voltage
VBR Breakdown voltage
VCClamping voltage
IDLeakage current at VWM
IPP Peak pulse current
αT Voltage temperature coefficient
VFForward voltage drop
RDDynamic resistance
VBR
VC
VWM
IPP
ID
IT
VF
IF
V
I
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
MAXIMUM
REVERSE LEAKAGE
ID AT VWM
VC AT IPP RD (2) VC AT IPP RD (2) αT (3)
10/1000 µs 8/20 µs
MIN. MAX. 25 °C 85 °C MAX. MAX. MAX.
V mA µA V V A Ω V A Ω 10-4/°C
SMA6J5.0A 6AE 6.40 7.07 10 150 375 5.0 9.1 65.9 0.031 13.4 298 0.021 5.7
SMA6J6.0A 6AG 6.70 7.41 10 600 1500 6.0 9.5 63.2 0.033 13.7 290 0.022 5.9
SMA6J6.5A 6AK 7.20 7.96 10 100 250 6.5 10.2 58.8 0.038 14.5 276 0.024 6.1
SMA6J7.5A 6AP 8.33 9.21 1 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5
SMA6J8.0A 6AR 8.89 9.83 1 20 50 8.0 12.5 48.0 0.056 18.2 220 0.038 7.0
SMA6J8.5A 6AT 9.4 10.4 1 20 50 8.5 13.3 45.1 0.064 18.7 205 0.040 7.3
SMA6J10A 6AX 11.1 12.3 1 0.2 1 10 15.7 38.2 0.089 19.6 184 0.040 7.8
SMA6J11A 6AZ 12.2 13.5 1 0.2 1 11 17.2 34.8 0.107 21.5 172 0.047 8.1
SMA6J12A 6BE 13.3 14.7 1 0.2 1 12 18.8 31.9 0.128 23.5 157 0.056 8.3
SMA6J13A 6BG 14.4 15.9 1 0.2 1 13 20.4 29.4 0.153 23.9 147 0.054 8.4
SMA6J15A 6BM 16.7 18.5 1 0.2 1 15 23.6 25.4 0.201 27.7 123 0.075 8.8
SMA6J16A 6BP 17.8 19.7 1 0.2 1 16 25.2 23.8 0.229 29.5 119 0.083 8.8
SMA6J17A 6BR 18.9 20.9 1 0.2 1 17 26.7 22.5 0.259 31.4 111 0.094 9.0
SMA6J18A 6BT 20.0 22.1 1 0.2 1 18 28.3 21.2 0.292 33.2 102 0.109 9.2
SMA6J20A 6BV 22.2 24.5 1 0.2 1 20 31.4 19.1 0.361 36.8 93 0.132 9.4
SMA6J22A 6BX 24.4 26.9 1 0.2 1 22 34.5 17.4 0.437 40.4 89 0.152 9.5
SMA6J24A 6BZ 26.7 29.5 1 0.2 1 24 37.8 15.9 0.523 44.3 80 0.185 9.6
SMA6J26A 6CE 28.9 31.9 1 0.2 1 26 40.9 14.7 0.614 47.9 75 0.213 9.7
SMA6J28A 6CG 31.1 34.4 1 0.2 1 28 44.0 13.6 0.704 51.6 68 0.253 9.8
New Product
SMA6J5.0A thru SMA6J28A
Vishay General Semiconductor
Document Number: 89115
Revision: 30-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient (1) R
θJA 120 °C/W
Typical thermal resistance, junction to lead RθJL 25 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMA6J5.0A-E3/61 0.064 61 1800 7" diameter plastic tape and reel
SMA6J5.0A-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Pulse Width (µs) - ½ I
PP
Exponential Waveform
100
1
0.1
0.1 10 10 000
P
PPM
- Peak Pulse Power (kW)
10
1 100 1000
TJ - Initial Temperature
100
50
0
075 200
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
75
25 100 150
25
50 125 175
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
t - Time (ms)
150
50
0
0 2.0 4.0
I
PPM
- Peak Pulse Current (%) I
RSM
100
1.0 3.0
Peak Value
IPPM
Half Value -
IPPM
IPP
2
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
td
tr = 10 µs
tr = 8 µs
td = 1000 µs
td = 20 µs
Reverse Voltage (V)
10 000
100
10
110100
C
J
- Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Stand-off
Voltage VWM
Measured at Zero Bias
New Product
SMA6J5.0A thru SMA6J28A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89115
Revision: 30-Oct-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Forward Characteristics
Reverse Voltage (V)
100
1
0.01
0.4 0.5 1.5
C
J
- Junction Capacitance (pF)
10
SMA6J5.0A ~ SMA6J8.0A
TA = 150 °C
0.1
1.41.31.21.11.00.90.80.70.6
SMA6J5.0A ~ SMA6J28A
TA = 25 °C
SMA6J8.5A ~ SMA6J28A
TA = 150 °C
Figure 6. Typical Transient Thermal Impedance
t - Pulse Duration (s)
1000
10
0.1
0.001 0.01 1000
Transient Thermal Impedance (°C/W)
100
1
1001010.1
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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