New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor Surface Mount Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Available in uni-directional polarity only * Excellent clamping capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-214AC (SMA) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. PRIMARY CHARACTERISTICS VWM 5.0 V to 28 V PPPM (10 x 1000 s) 600 W PPPM (8 x 20 s) 4000 W PD at TA = 50 C 4W IFSM 50 A TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation Peak pulse current with 10/1000 s waveform (1)(2) with 8/20 s waveform with 10/1000 s waveform with 8/20 s waveform SYMBOL VALUE UNIT PPPM 600 4000 W IPPM See next table A PD 4.0 W (1)(2) Power dissipation on infinite heatsink, TA = 50 C Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range IFSM 50 A TJ, TSTG - 55 to + 150 C Notes: (1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 C per Fig. 2. (2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal Document Number: 89115 Revision: 30-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor I ELECTRICAL CHARACTERISTICS SYMBOL IF PARAMETER VWM Stand-off voltage VBR Breakdown voltage VC Clamping voltage ID Leakage current at VWM IPP Peak pulse current T Voltage temperature coefficient VF Forward voltage drop RD Dynamic resistance VWM VBR VC ID VF IT V IPP ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) MIN. MAX. V 6.40 MAXIMUM REVERSE LEAKAGE ID AT VWM 25 C mA SMA6J5.0A 6AE 7.07 SMA6J6.0A 6AG 6.70 7.41 SMA6J6.5A 6AK 7.20 7.96 SMA6J7.5A 6AP 8.33 9.21 SMA6J8.0A 6AR 8.89 9.83 10 85 C A VC AT IPP RD (2) VC AT IPP 10/1000 s RD (2) T (3) 8/20 s MAX. MAX. MAX. V V A V A 10-4/C 5.0 9.1 65.9 0.031 13.4 298 0.021 5.7 150 375 10 600 1500 6.0 9.5 63.2 0.033 13.7 290 0.022 5.9 10 100 250 6.5 10.2 58.8 0.038 14.5 276 0.024 6.1 1 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5 1 20 50 8.0 12.5 48.0 0.056 18.2 220 0.038 7.0 SMA6J8.5A 6AT 9.4 10.4 1 20 50 8.5 13.3 45.1 0.064 18.7 205 0.040 7.3 SMA6J10A 6AX 11.1 12.3 1 0.2 1 10 15.7 38.2 0.089 19.6 184 0.040 7.8 SMA6J11A 6AZ 12.2 13.5 1 0.2 1 11 17.2 34.8 0.107 21.5 172 0.047 8.1 SMA6J12A 6BE 13.3 14.7 1 0.2 1 12 18.8 31.9 0.128 23.5 157 0.056 8.3 SMA6J13A 6BG 14.4 15.9 1 0.2 1 13 20.4 29.4 0.153 23.9 147 0.054 8.4 SMA6J15A 6BM 16.7 18.5 1 0.2 1 15 23.6 25.4 0.201 27.7 123 0.075 8.8 SMA6J16A 6BP 17.8 19.7 1 0.2 1 16 25.2 23.8 0.229 29.5 119 0.083 8.8 SMA6J17A 6BR 18.9 20.9 1 0.2 1 17 26.7 22.5 0.259 31.4 111 0.094 9.0 SMA6J18A 6BT 20.0 22.1 1 0.2 1 18 28.3 21.2 0.292 33.2 102 0.109 9.2 SMA6J20A 6BV 22.2 24.5 1 0.2 1 20 31.4 19.1 0.361 36.8 93 0.132 9.4 SMA6J22A 6BX 24.4 26.9 1 0.2 1 22 34.5 17.4 0.437 40.4 89 0.152 9.5 SMA6J24A 6BZ 26.7 29.5 1 0.2 1 24 37.8 15.9 0.523 44.3 80 0.185 9.6 SMA6J26A 6CE 28.9 31.9 1 0.2 1 26 40.9 14.7 0.614 47.9 75 0.213 9.7 SMA6J28A 6CG 31.1 34.4 1 0.2 1 28 44.0 13.6 0.704 51.6 68 0.253 9.8 Notes: (1) Pulse test: tp 50 ms (2) To calculate maximum clamping voltage at other surge currents, use the following formula VCLmax. = RD x IPP + VBRmax. (3) To calculate VBR vs. junction temperature, use the following formula VBR at TJ = VBR at 25 C x (1 + T x (TJ - 25)) (4) VF = 3.5 V at IF = 25 A, pulse test: 300 s pulse width www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89115 Revision: 30-Oct-08 New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient SYMBOL VALUE RJA 120 C/W RJL 25 C/W (1) Typical thermal resistance, junction to lead UNIT Note: (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMA6J5.0A-E3/61 0.064 61 1800 7" diameter plastic tape and reel SMA6J5.0A-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) IPPM - Peak Pulse Current (%) IRSM PPPM - Peak Pulse Power (kW) 100 10 1 tr = 10 s tr = 8 s Peak Value IPPM 100 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM Half Value - IPP IPPM 2 50 td = 1000 s td = 20 s td 0 10 1 100 1000 10 000 0 2.0 1.0 4.0 3.0 Pulse Width (s) - 1/2 IPP Exponential Waveform t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform 10 000 100 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 0.1 0.1 150 75 Measured at Zero Bias 1000 50 25 Measured at Stand-off Voltage VWM 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 0 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature Reverse Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance Document Number: 89115 Revision: 30-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor Transient Thermal Impedance (C/W) CJ - Junction Capacitance (pF) 100 SMA6J5.0A ~ SMA6J8.0A TA = 150 C 10 SMA6J8.5A ~ SMA6J28A TA = 150 C 1 0.1 SMA6J5.0A ~ SMA6J28A TA = 25 C 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1000 100 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 Reverse Voltage (V) t - Pulse Duration (s) Figure 5. Typical Forward Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89115 Revision: 30-Oct-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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