DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V Features and Benefits RDS(on) ID TA = +25C 3.0 @ VGS = 4.5V 240mA 6.0 @ VGS = 1.8V 180mA * * * * * * * Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications * * * * N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability * DC-DC Converters Mechanical Data * Power Management Functions * * * * * * Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X2-DFN1006-3 Body Diode S D Gate G ESD PROTECTED Bottom View Gate Protection Diode Source Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN26D0UFB4-7 DMN26D0UFB4-7B Notes: Case X2-DFN1006-3 X2-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN26D0UFB4 Document number: DS31775 Rev. 12 - 2 1 of 7 www.diodes.com September 2016 (c) Diodes Incorporated DMN26D0UFB4 Marking Information From date code 1527 (YYWW), this changes to: M1 M1 Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side M1 M1 M1 M1 M1 M1 M1 M1 DMN26D0UFB4-7 M1 Top View Bar Denotes Gate and Source Side M1 = Part Marking Code M1 M1 M1 DMN26D0UFB4-7B Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Unit Drain Source Voltage Characteristic VDSS 20 V Gate-Source Voltage VGSS 10 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25C TA = +70C ID 240 190 mA Continuous Drain Current (Note 5) VGS = 1.8V Steady State TA = +25C TA = +70C ID 180 140 mA IDM 805 mA Pulsed Drain Current - TP = 10s Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) @TA = +25C Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Note: Symbol Value PD 350 Unit mW RJA 357 C/W TJ, TSTG -55 to +150 C 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. DMN26D0UFB4 Document number: DS31775 Rev. 12 - 2 2 of 7 www.diodes.com September 2016 (c) Diodes Incorporated DMN26D0UFB4 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25C Symbol Min Typ Max Unit Test Condition BVDSS 20 V IDSS 500 nA VDS = 20V, VGS = 0V 1 100 A nA VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VGS = 0V, ID = 100A IGSS VGS(TH) 0.6 0.9 V VDS = VGS, ID = 250A RDS(ON) 1.8 2.5 3.4 4.7 3.0 4.0 6.0 10.0 VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA Forward Transconductance |Yfs| 180 242 mS VDS = 10V, ID = 0.1A Source-Drain Diode Forward Voltage VSD 0.5 1.4 V VGS = 0V, IS = 115mA Input Capacitance Ciss 14.1 28.2 pF Output Capacitance Coss 2.9 5.8 pF Reverse Transfer Capacitance Crss 1.6 3.2 pF tD(ON) 3.8 tR 7.9 tD(OFF) 13.4 tF 15.2 Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS (Note 7) VDS = 15V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 0.4 V DS = 10V VGS = 4.5V )A 0.3 ( T N E R R U C 0.2 N IA R D ,D I 0.1 VGS = 3.0V 0.5 0.4 VGS = 2.5V 0.3 VGS = 2.0V 0.2 0.1 TA = -55C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 8V 0.6 0 0 VGS = 4.5V, VDD = 10V ID = 200mA, RG = 2.0 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 0.8 0.7 ns TA = 25C TA = 85C TA = 125C TA = 150C VGS = 1.5V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN26D0UFB4 Document number: DS31775 Rev. 12 - 2 3 0 3 of 7 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 September 2016 (c) Diodes Incorporated 5 4 3 VGS = 1.8V 2 VGS = 2.5V 4 R 0 0.01 0.1 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 VGS = 4.5V ID = 500mA 1.4 VGS = 2.5V ID = 150mA 1.2 1.0 0.8 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2 TA = 125C TA = 85C TA = 25C 1 TA = -55C 0.1 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 3.5 3.0 2.5 VGS = 2.5V ID = 150mA 2.0 1.5 VGS = 4.5V ID = 500mA 1.0 0.6 0.4 -50 0.5 -50 -25 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) ) Fig. 5 On-Resistance Variation with Temperature 1.4 0.8 1.2 0.7 1.0 ID = 1mA 0.8 0.6 ID = 250A 0.4 0.2 -25 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) ) Fig. 6 On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150C 4.0 1.8 T ( S G 3 1 2.0 )V ( E G A T L O V D L O H S E R H T E T A G , )H VGS = 4.5V O ( S D VGS = 4.5V 1 0.01 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) DMN26D0UFB4 )A ( T N E R R U C E C R U O S ,S I 0.6 TA = 25C 0.5 0.4 0.3 0.2 0.1 V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN26D0UFB4 Document number: DS31775 Rev. 12 - 2 0 0 4 of 7 www.diodes.com 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current September 2016 (c) Diodes Incorporated DMN26D0UFB4 20 10,000 f = 1MHz IDSS, LEAKAGE CURRENT (nA) )A 1,000 n ( T N E R R 100 U C E G A K 10 A E L ,S S D 1 I C, CAPACITANCE (pF) 15 Ciss 10 5 Coss TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C Crss 0 0 4 8 12 16 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0.1 0 20 2 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA R JA = 278 /W 278oC/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.000001 0.00001 DMN26D0UFB4 Document number: DS31775 Rev. 12 - 2 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 5 of 7 www.diodes.com 10 100 1,000 September 2016 (c) Diodes Incorporated DMN26D0UFB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. A A1 Seating Plane D b Pin #1 ID e E b2 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 G1 X X1 DMN26D0UFB4 Document number: DS31775 Rev. 12 - 2 6 of 7 www.diodes.com September 2016 (c) Diodes Incorporated DMN26D0UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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