FEATURES
• High Output Power: P1dB = 39.0dBm (Typ.)
• High Gain: G1dB = 7.0dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3= -46dBc@Po = 28.5dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
1
Edition 1.3
August 2004
FLM1011-8F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
42.8
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 3400 5200
-0.5 -1.5 -3.0
38.5 39.0 -
6.0 7.0 -
VDS = 5V, IDS = 170mA
VDS = 5V, IDS = 2200mA
VDS = 5V, VGS = 0V
IGS = -170µA
VDS = 10V
f = 10.7 ~ 11.7 GHz
IDS ≅ 0.65 IDSS(Typ.)
ZS = ZL = 50Ω
mA
V
- 3400 -mS
-5.0 - - V
dB
dBm
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 2200 2600 mAIdsr
Power-Added Efficiency -29- %
ηadd
Gain Flatness --±0.6 dB
∆G
Thermal Resistance Channel to Case -3.0 3.5 °C/W
CASE STYLE: IB
Rth
3rd Order Intermodulation
Distortion
f = 11.7GHz, ∆f = 10MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
-44 -46 - dBc
IM3
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise --80 °C
∆Tch
DESCRIPTION
The FLM1011-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLM1011-8F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
30
50
40
20
10
050 100 150 200
Case Temperature (°C)
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 11.7 GHz
f2 = 11.71 GHz
2-tone test
16 2018 22 24
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Output Power (S.C.L.) (dBc)
-40
-30
-20
-50
27
25
23
29
31
33
IM3 (dBc)
Pout
IM3
OUTPUT POWER vs. FREQUENCY
Pin=33dBm
31dBm
29dBm
27dBm
10.7 11.4511.210.95 11.7
Frequency (GHz)
36
37
38
39
40
35
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
29
31
33
35
37
39
23 25 27 29 31 33
30
15
Input Power (dBm)
Output Power (dBm)
ηadd
Pout
ηadd (%)
VDS=10V
f = 11.2 GHz
3
FLM1011-8F
X, Ku-Band Internally Matched FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180°
+90°
0°
-90°
S21
S12
SCALE FOR |S21|
SCALE FOR |S12|
0.2
0.1
50Ω
10 12
3
4
11.7 11.7
11.9
11.9
11.3
11.3
10.5 GHz
10.5 GHz
10.7
10.7
10.9
10.9
11.1
11.1
11.5 11.5
11.7
11.7
11.9
11.9
11.3
11.3 10.5 GHz
10.5 GHz
10.7
11.1
11.1
11.5
11.5
10.9
10.7
10.9
S-PARAMETERS
VDS = 10V, IDS = 2200mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
10500 .638 13.3 2.349 110.3 .066 93.2 .386 -83.3
10600 .630 5.4 2.376 100.3 .071 83.2 .358 -93.7
10700 .617 -2.6 2.410 89.8 .074 73.3 .326 -106.9
10800 .597 -10.6 2.446 78.9 .076 63.9 .299 -122.1
10900 .570 -18.9 2.476 68.3 .081 53.1 .283 -140.5
11000 .539 -27.5 2.513 57.0 .082 43.1 .282 -161.2
11100 .498 -36.2 2.544 45.3 .083 32.6 .297 179.1
11200 .449 -45.8 2.563 33.5 .087 22.7 .324 161.1
11300 .397 -55.9 2.565 21.5 .088 12.3 .356 146.0
11400 .337 -67.2 2.561 9.2 .090 0.3 .386 133.2
11500 .276 -80.6 2.548 -2.8 .090 -10.3 .411 122.1
11600 .217 -97.8 2.528 -14.9 .089 -21.7 .425 112.3
11700 .167 -124.5 2.519 -27.2 .093 -32.9 .429 103.1
11800 .143 -162.8 2.509 -39.7 .090 -44.9 .419 94.1
11900 .168 157.8 2.502 -52.6 .093 -57.6 .399 84.4
4
FLM1011-8F
X, Ku-Band Internally Matched FET
2-R 1.6±0.15
(0.063)
0.6
(0.024)
10.7
(0.421)
12.0
(0.422)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
12.9±0.2
(0.508)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
0.2 Max.
(0.008)
1.45
(0.059)
Case Style "IB"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
5.2 Max.
(0.205)
2.6±0.15
(0.102)
0.1
(0.004)
1
2
3
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
