PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. P-CHANNEL MOSFET Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. VDSS N-Ch P-Ch 55V -55V RDS(on) 0.050 0.105 SO-8 Absolute Maximum Ratings Parameter V DS ID @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C PD @TA = 70C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 55 4.7 3.8 38 P-Channel -55 -3.4 -2.7 -27 2.0 1.3 72 4.7 114 -3.4 0.20 20 5.0 -5.0 -55 to + 150 Units V A W W mJ A mJ V V/ns C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units 62.5 C/W 1 10/7/04 IRF7343PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current I GSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. 55 -55 1.0 -1.0 7.9 3.3 Typ. Max. 0.059 0.054 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 2.0 -2.0 25 -25 100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.8 10 15 32 48 43 64 13 20 22 32 740 690 190 210 71 86 Min. Typ. 0.70 -0.80 60 54 120 85 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Units V V/C V S A nA nC ns pF Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 4.7A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 10V, I D = 4.5A VDS = -10V, I D = -3.1A VDS = 55V, V GS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, T J = 55C VDS = -55V, V GS = 0V, TJ = 55C VGS = 20V N-Channel I D = 4.5A, VDS = 44V, VGS = 10V P-Channel I D = -3.1A, V DS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0, RD = 16 P-Channel VDD = -28V, ID = -1.0A, RG = 6.0, RD = 16 N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Max. Units Conditions 2.0 -2.0 A 38 -27 1.2 TJ = 25C, IS = 2.0A, VGS = 0V V -1.2 TJ = 25C, IS = -2.0A, VGS = 0V 90 N-Channel ns 80 TJ = 25C, I F =2.0A, di/dt = 100A/s 170 nC P-Channel TJ = 25C, I F = -2.0A, di/dt = 100A/s 130 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) N-Channel ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. P-Channel Starting TJ = 25C, L = 20mH RG = 25, IAS = -3.4A. 2 Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. www.irf.com IRF7343PbF N-Channel 100 100 VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 10 3.0V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 1 20s PULSE WIDTH TJ = 150 C 1 0.1 V DS = 25V 20s PULSE WIDTH 3 4 5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6 TJ = 150 C 10 TJ = 25 C 1 0.1 0.2 VGS = 0 V 0.5 0.8 1.1 1.4 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7343PbF ID = 4.7A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 R DS (on), Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 N-Channel 0.120 0.100 0.080 VGS = 4.5V 0.060 VGS = 10V 0.040 TJ , Junction Temperature ( C) 20 30 200 0.08 I D = 4.7A 0.04 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 10 A EAS , Single Pulse Avalanche Energy (mJ) 0.10 0.06 40 Fig 6. Typical On-Resistance Vs. Drain Current 0.12 RDS(on) , Drain-to-Source On Resistance ( ) 10 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 4 0 TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 120 80 40 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7343PbF N-Channel 1200 VGS , Gate-to-Source Voltage (V) 1000 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 600 400 Coss 200 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 Crss 0 1 10 0 100 0 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7343PbF 100 P-Channel 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -3.0V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 -3.0V 1 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 100 100 -ISD , Reverse Drain Current (A) Fig 13. Typical Output Characteristics -I D , Drain-to-Source Current (A) Fig 12. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 1 V DS = -25V 20s PULSE WIDTH 3 4 5 6 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics 6 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP TOP 7 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VSD ,Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage www.irf.com IRF7343PbF P-Channel ID = -3.4 A R DS (on) , Drain-to-Source On Resistance() RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.240 0.200 VGS = -4.5V 0.160 0.120 VGS = -10V 0.080 0 2 TJ , Junction Temperature ( C) 0.35 0.25 I D = -3.4 A 0.15 0.05 8 11 -V GS , Gate-to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage www.irf.com 14 A EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to-Source On Resistance ( ) 0.45 5 6 8 10 12 Fig 17. Typical On-Resistance Vs. Drain Current Fig 16. Normalized On-Resistance Vs. Temperature 2 4 -ID , Drain Current (A) 300 ID -1.5A -2.7A BOTTOM -3.4A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 19. Maximum Avalanche Energy Vs. Drain Current 7 IRF7343PbF 1200 20 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 960 C, Capacitance (pF) P-Channel Ciss 720 480 Coss 240 Crss 0 1 10 --VDS , Drain-to-Source Voltage (V) VDS =-48V VDS =-30V VDS =-12V 16 12 8 4 0 100 ID = -3.1A 0 10 20 30 40 QG , Total Gate Charge (nC) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7343PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 5 H E 1 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A MILLIMET ERS MAX MIN .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X INCHES MIN .0532 A MAX .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 9 IRF7343PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 10 www.irf.com