2SK3518-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings 500 6 24 30 6 115 20 5 2.16 32 Operating and storage Tch +150 -55 to +150 temperature range Tstg Isolation Voltage VISO *5 2 *1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch < =150C *3 IF < = BVDSS, Tch < = 150C = -ID, -di/dt=50A/s, Vcc < *4 VDS < = 500V Unit V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) C C kVrms Source(S) *5 t=60sec, f=60Hz Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=500V VGS=0V Tch=125C VDS=400V VGS=0V VGS=30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V Min. 2.5 RGS=10 V CC=250V ID=6A VGS=10V L=5.9mH Tch=25C IF=6A VGS=0V Tch=25C IF=6A VGS=0V -di/dt=100A/s Tch=25C Typ. 500 3.0 10 1.15 5 430 60 2.5 10 5 20 5 15 6.5 2.5 Max. 5.0 25 250 100 1.50 675 90 4.5 15 7.5 30 7.5 22.5 10.5 4.5 6 1.00 0.5 1.7 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 3.91 58.0 Units C/W C/W 1 2SK3518-01MR FUJI POWER MOSFET Characteristics 50 Typical Output Characteristics Allowable Power Dissipation PD=f(Tc) 10 ID=f(VDS):80s Pulse test,Tch=25C 20V 10V 9 7.0V 8 40 6.5V 7 6 ID [A] PD [W] 30 20 5 6.0V 4 3 10 VGS=5.5V 2 1 0 0 25 50 75 100 125 0 150 0 2 4 6 8 10 Tc [C] 12 14 16 18 20 22 VDS [V] Typical Transfer Characteristic Typical Transconductance ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 1 10 ID[A] gfs [S] 10 1 0.1 0.1 0.01 0.01 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.1 1 VGS[V] 10 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 4 4.0 3.5 VGS=5.5V 3.0 6.5V 7.0V 10V 2 20V 1 RDS(on) [ ] RDS(on) [ ] 3 6.0V 2.5 max. 2.0 typ. 1.5 1.0 0.5 0 0.0 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3518-01MR FUJI POWER MOSFET Typical Gate Charge Characteristics Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A VGS=f(Qg):ID=3A, Tch=25C 20 7.0 6.5 18 6.0 16 5.5 max. 14 4.5 Vcc= 100V 250V 400V 12 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 10 8 2.5 6 2.0 1.5 4 1.0 2 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 5 10 Tch [C] 15 20 25 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10n 1n 10 IF [A] C [F] Ciss 100p Coss 1 10p Crss 0.1 0.00 1p 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 10 500 1.50 1.75 2.00 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V tf td(on) 1 IAS=2.4A 300 EAS [mJ] t [ns] 1.25 400 2 td(off) 10 1.00 VSD [V] VDS [V] IAS=3.6A 200 tr IAS=6A 100 10 0 0 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Zth(ch-c) [C/W] 2SK3518-01MR 10 1 10 0 10 -1 10 -2 10 -3 FUJI POWER MOSFET Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Avalanche Current I AV [A] t [sec] 10 2 10 1 10 0 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=50V Single Pulse -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4