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○
c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.G
2SB1260
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
+
0.2
+
0.1
+
0.2
(3)(2)(1)
4.0
1.0±0.2 0.5±0.1
2.5
3.0±0.2
1.5±0.1
1.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5±
4.5
1.6±0.1
±0.3
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1181
+
0.2
+
0.2
+
0.3
2.3
±
0.22.3
±
0.2
0.65
±
0.1
0.9
0.75
1.0
±
0.2
0.55
±
0.1
9.5
±
0.5
5.5 1.5
±
0.3
2.5
1.5
2.3
0.5
±
0.1
6.5
±
0.2
5.1 C0.5
(3)
(2)
(1)
0.9
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181
Features Dimensions (Unit : mm)
1) Hight breakdown voltage and high current.
BVCEO= −80V, IC = −1A
2) Good hFE linearty.
3) Low VCE(sat).
4) Complements the 2SD1898 / 2SD1733.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 2SB1260 : Pw=20ms duty=1/2
∗2 2SB1260 : When mounted on a 40
×
40
×
0.7 mm ceramic board.
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−80 V
V
V
A (DC)
W
°C
°C
−80
−5
−1
I
CP
A (Pulse)−2
∗1
0.5
2
∗2
1
10
2SB1260
2SB1181
2SB1181
150
−55 to +150
Symbol Limits Unit
W (Tc=25°C)
Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Cob
Min.
−80
−80
−5
−
−
120
2SB1181
2SB1181
2SB1260
−
−
−
−
−
−
−
−
−
−
100
25
−
−
−
−1
−1
390
−0.4
−
−
VI
C
= −50
μ
A
I
C
= −1mA
I
E
= −50
μ
A
V
CB
= −60V
V
EB
= −4V
V
CE
= −3V, I
C
= −0.1A
I
C
/I
B
= −500mA/ −50mA
V
CE
= −10V, I
E
=50mA, f=100MHz
V
CB
= −10V
I
E
=0A
f=1MHz
V
V
μ
A
μ
A
−
V
MHzf
T
pF
−20 −pF
Typ. Max. Unit Conditions
2/2
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○
c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.G
Data Sheet
2SB1260 / 2SB1181
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces) 2500 1000
−
QR
hFE
2SB1260
TL
QR
2SB1181 −
T100
Type
hFE values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0
−0.1
−1
−100
−1000
BASE TO EMITTER VOLTAGE : V
BE (V)
COLLECTOR CURRENT : I
C (mA)
−0.8 −1.2 −1.6
−10
−0.2 −0.4 −1.0 −1.4−0.6
Ta
=
25°C
V
CE
= −5V
Fig.2 Grounded emitter output
characteristics
0
0
−0.2
−0.8
−1.0
−0.4 −0.8 −1.2 −1.6
−0.4
−0.6
−2.0−0.2 −0.6 −1.0 −1.4 −1.8
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta=25°C
−0.5mA
I
B
=0mA
−1mA
−1.5mA
−2mA
−2.5mA
−3mA
−3.5mA
−4mA
−4.5mA
Fig.3 DC current gain vs.
collector current
−1−2−5−10 −20 −50 −100 −200 −500 −200
0
COLLECTOR CURRENT : I
C
(mA)
10
DC CURRENT GAIN : h
FE
−1000
20
50
100
200
500
1000
V
CE
= −3V
−1V
Ta=25°C
Fig.4 Collector-emitter saturation
voltage vs. collector current
−0.01
−0.02
−0.05
−0.1
−0.2
−0.5
−1
−2
Ta=25°C
I
C
/I
B
=20
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
200
0
−
1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
10
Fig.5 Gain bandwidth product
vs. emitter current
1 2 5 10 20 50 100 200 500 1000
1
2
5
10
20
50
100
200
500
1000
EMITTER CURRENT : IE
(mA)
TRANSITION FREQUENCY : fT
(MHz)
Ta=25°C
V
CE= −5V
Fig.6 Collector output capacitance
vs. collector-base voltage
-0.2−0.1 −0.5 -1 −2−5−10 −20 −50 −100
1
2
5
10
20
50
100
200
500
1000
Ta
=
25
°C
f
=
1MHz
I
E
=
0A
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
R1120A
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© 2012 ROHM Co., Ltd. All rights reserved.
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