Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 6 1Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
•Extremely Low VF
•Low Power Loss/High Efficiency
•Low Stored Charge, Majority Carrier Conduction
•Shipped in plastic bags, 500 per bag
•Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to
the part number
•These devices are manufactured with a Pb−Free external lead
finish only*
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.1 gram (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16 in from case
•Polarity: Cathode indicated by Polarity Band
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
1N
582x
1N582x = Device Code
x = 0, 1 or 2
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
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1N5820, 1N5821, 1N5822
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2
MAXIMUM RATINGS
Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
Non−Repetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (Note 1)
VR(equiv) 0.2 VR(dc), TL = 95°C
(RJA = 28°C/W, P.C. Board Mounting, see Note 5)
IO3.
0A
Ambient Temperature
Rated VR(dc), PF(AV) = 0
RJA = 28°C/W
TA90 85 80 °C
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
IFSM 80 (for one cycle) A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied) TJ, Tstg 65 to +125 °C
Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 15 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*THERMAL CHARACTERISTICS (Note 5)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RJA 28 °C/W
*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
VF0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
V
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
TL = 25°C
TL = 100°C
iR
2.0
20 2.0
20 2.0
20
mA
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820−22.
ORDERING INFORMATION
Device Package Shipping†
1N5820 Axial Lead 500 Units/Bag
1N5820RL Axial Lead 1500/Tape & Reel
1N5821 Axial Lead 500 Units/Bag
1N5821RL Axial Lead 1500/Tape & Reel
1N5822 Axial Lead 500 Units/Bag
1N5822RL Axial Lead 1500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1N5820, 1N5821, 1N5822
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3
NOTE 3 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 VRWM. Proper derating may be
accomplished by use of equation (1).
TA(max) = TJ(max) RJAPF(AV) RJAPR(AV)(1)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
RJA = Junction−to−ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
TR = TJ(max) RJAPR(AV) (2)
Substituting equation (2) into equation (1) yields:
TA(max) = TR RJAPF(AV) (3)
Inspection of equations (2) and (3) reveals that TR is the
ambient temperature at which thermal runaway occurs or
where TJ = 125°C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 1 15°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
VR(equiv) = V(FM) F (4)
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find TA(max) for 1N5821 operated in a
12−volt dc supply using a bridge circuit with capacitive filter
such that I DC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input
Voltage = 10 V(rms), RJA = 40°C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 108°C
@ VR = 9.2 V and RJA = 40°C/W.
Step 3 . Find PF(AV) from Figure 6. **Read PF(AV) = 0 . 8 5 W
@I(FM)
I(AV) 10and IF(AV) 1.0 A.
Step 4. Find TA(max) from equation (3).
TA(max) = 108 (0.85) (40) = 74°C.
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBR−prefix devices, using PF(AV) from Figure 6.
Table 1. Values for Factor F
Circuit Half Wave Full Wave, Bridge Full W ave,
Center Tapped*†
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK) 2.0 Vin(PK).
†Use line to center tap voltage for Vin.
1N5820, 1N5821, 1N5822
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4
Figure 1. Maximum Reference Temperature
1N5820 Figure 2. Maximum Reference Temperature
1N5821
Figure 3. Maximum Reference Temperature
1N5822 Figure 4. Steady−State Thermal Resistance
152.0
VR, REVERSE VOLTAGE (VOLTS)
115
125
105
304.0
VR, REVERSE VOLTAGE (VOLTS)
125
115
105
95
85
75
L, LEAD LENGTH (INCHES)
1/80
25
20
15
10
5.0
0
2/840
TR, REFERENCE TEMPERATURE ( C)T
RJL, THERMAL RESISTANCE
95
85
75
5.03.0 4.0 7.0 10 20
°
5.0 7.0 10 15 20 3/8 4/8 5/8 6/8 7/8 1.0
40
35
30
JUNCTION−TO−LEAD ( C/W)°
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
, REFERENCE TEMPERATURE ( C)
R°
RJA (°C/W) = 70
50
40
28
20 15 10
8.0
15
VR, REVERSE VOLTAGE (VOLTS)
115
105
TR, REFERENCE TEMPERATURE ( C)
95
85
75
5.03.0 4.0 7.0 10 20
°
RJA (°C/W) = 70
50
40
28
20 15
10
8.0
125
30
RJA (°C/W) = 70
50
40
28
20
15
10
8.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
LEAD LENGTH = 1/4″
Ppk Ppk
tp
t1
TIME
DUTY CYCLE = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
TJL = Ppk • RJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where:
TJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
Figure 5. Thermal Response
20 k
The temperature of the lead should be measured using a ther-
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady−state conditions are achieved. Using the measured val-
ue of TL, the junction temperature may be determined by:
TJ = TL + TJL
1N5820, 1N5821, 1N5822
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5
3.00.1
IF(AV), AVERAGE FORWARD CURRENT (AMP)
10
7.0
5.0
0.7
0.5
0.1
5.0
P
0.2 0.3 0.5 2.0
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
3.0
2.0
1.0
0.3
0.2
0.7 1.0 7.0 10
Figure 6. Forward Power Dissipation 1N5820−22
dc
SQUARE WAVE
TJ ≈ 125°C
SINE WAVE
I(FM)
I(AV) (ResistiveLoad)
Capacitive
Loads 5.0
10
20
TA(A) TA(K)
TL(A) TC(A) TJTC(K) TL(K)
PD
RS(A) RL(A) RJ(A) RJ(K) RL(K) RS(K)
NOTE 4 − APPROXIMATE THERMAL CIRCUIT MODEL
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RS = Thermal Resistance, Heatsink to Ambient
RL = Thermal Resistance, Lead−to−Heatsink
RJ = Thermal Resistance, Junction−to−Case
PD = Total Power Dissipation = PF + PR
PF = Forward Power Dissipation
PR = Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
RL = 42°C/W/in typically and 48°C/W/in maximum
RJ = 10°C/W typically and 16°C/W maximum
The maximum lead temperature may be found as follows:
TL = TJ(max) TJL
where TJL RJL · PD
TYPICAL VALUES FOR RJA IN STILL AIR
Data shown for thermal resistance junction−to−ambient (RJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4 RJA
50 51 53 55 °C/W
°C/W
°C/W
58 59 61 63
28
NOTE 5 — MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
Mounting Method 3
P.C. Board with
2−1/2, x 2−1/2,
copper surface.
BOARD GROUND
PLANE
VECTOR PUSH−IN
TERMINALS T−28
Mounting Method 2
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
LL
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
LL
É
É
É
É
É
L = 1/2″
1N5820, 1N5821, 1N5822
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6
75°C
25°C
100°C
TJ = 125°C
NOTE 6 — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist-
ing o f an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
Figure 7. Typical Forward Voltage
Figure 8. Maximum Non−Repetitive Surge
Current
Figure 9. Typical Reverse Current
1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
50
5.0
NUMBER OF CYCLES
5.0 1001.0
10
VR, REVERSE VOLTAGE (VOLTS)
8.00
50
0.2
0.01
16
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
I
0.5
0.40 0.2 0.6 0.8
7.0 102.0 3.0
100
24 32 40
0.05 1.4
100
20
0.1
, PEAK HALF−WAVE CURRENT (AMP)
FSM
70
50
30
20
TJ = 100°C
25°C
1.0
0.3
0.2
0.1
0.07
0.7
1.0
2.0
3.0
7.0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
1.00.5
200
70
2.0 3.0 5.0 10
500
300
100
C, CAPACITANCE (pF)
0.7 7.0 20 30
1N5820
1N5821
1N5822
TJ = 25°C
f = 1.0 MHz
20 30 50 70
TL = 75°C
f = 60 Hz
SURGE APPLIED AT RATED LOAD CONDITIONS
Figure 10. Typical Capacitance
I , REVERSE CURRENT (mA)
R
0.02
0.05
10
1.0
0.5
5.0
2.0
4.0 12 20 28 36
1N5820
1N5821
1N5822
1 CYCLE
1.10.30.1 0.5 0.7 1.30.9
1N5820, 1N5821, 1N5822
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7
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
(DO−201AD)
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
12
KA
K
D
B
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.287 0.374 7.30 9.50
B0.189 0.209 4.80 5.30
D0.047 0.051 1.20 1.30
K1.000 −−− 25.40 −−−
1N5820, 1N5821, 1N5822
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1N5820/D
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