Plastic Medium Power Silicon
NPN Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
•DC Current Gain —
hFE = 40 (Min) @ IC = 0.15 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCBO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEBO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25C
ÎÎÎÎÎ
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
25
ÎÎÎ
ÎÎÎ
Watts
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–55 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
V(BR)CEO
ÎÎÎ
80
ÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
—
0.1
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎ
—
ÎÎ
1.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE1
hFE2
ÎÎÎ
40
25
ÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage*
(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
—
ÎÎ
0.6
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage*
(IC = 1.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
—
ÎÎ
1.3
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎ
3.0
ÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 11 1Publication Order Number:
BD237/D
BD237
2.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
25 WATTS
CASE 77–09
TO–225AA TYPE
*ON Semiconductor Preferred Device
PNP
NPN
BD238
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
BD238
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2
Figure 1. Active Region Safe Operating Area
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
1
0.1
3103010
0
0.3
IC, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
5 ms
1
100 µs
1 ms
BD237
BD236
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power–temperature derating must be observed for both
steady state and pulse power conditions.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
00.2
0.8
0.6
0.4
0.2
1.0 2.0 10 30 50 200
IC = 0.1 A 0.25 A 1.0 A0.5 A
0.3 0.5 100203.0 5.0
TJ = 25°C
1000
Figure 3. Current Gain
IC, COLLECTOR CURRENT (mA)
10
100 TJ = + 150°C
TJ = + 55°C
VCE = 2.0 V
hFE, DC CURRENT GAIN (NORMALIZED)
700
500
300
200
70
50
30
20
TJ = + 25°C
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
Figure 4. “On” Voltages
0
1.5
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
1.2
0.9
0.6
0.3
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
VBE @ VCE = 2.0 V
BD238
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3
Figure 5. Thermal Response
t, TIME or PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
θJC = 3.5°C/W TYP
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.01
BD238
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4
PACKAGE DIMENSIONS
CASE 77–09
ISSUE W
TO–225AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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