HMC606 v04.0118 LOW NOISE AMPLIFIERS - CHIP GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz * Radar, EW & ECM P1dB Output Power: +15 dBm * Microwave Radio Gain: 14 dB * Test Instrumentation Output IP3: +27 dBm * Military & Space Supply Voltage: +5V @ 64 mA * Fiber Optic Systems 50 Ohm Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm General Description Functional Diagram The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25 C, Vcc1= Vcc2= 5V Parameter Min. Frequency Range Gain 11 Max. Min. Typ. Max. 12 - 18 13 dB dB 0.021 0.25 dB/ C Noise Figure 4.5 6.5 dB Input Return Loss 20 22 dB Output Return Loss Output Power for 1 dB Compression (P1dB) 10 GHz 1.0 Gain Variation Over Temperature 14.0 Units 1.0 Gain Flatness 15 12 15 10 15 dB 13 dBm dBm Saturated Output Power (Psat) 18 15 Output Third Order Intercept (IP3) 27 22 dBm Phase Noise @ 100 Hz -140 -140 dBc/Hz Phase Noise @ 1 kHz -150 -150 dBc/Hz Phase Noise @ 10 kHz -160 -160 dBc/Hz Phase Noise @ 1 MHz -170 -170 dBc/Hz Supply Current 1 Typ. 2 - 12 64 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 95 64 95 mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC606 v04.0118 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Gain & Return Loss Gain vs. Temperature 18 16 14 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -10 12 10 8 6 -20 +25C +85C -55C 4 2 -30 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 12 14 16 18 0 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 10 Output Return Loss vs. Temperature 0 -5 +25C +85C -55C -10 -15 -20 -25 +25C +85C -55C -5 -10 -15 -20 -25 -30 -30 2 4 6 8 10 12 14 16 2 18 4 6 8 10 14 16 18 Noise Figure vs. Temperature Power Compression 14 20 12 +25C +85C -55C NOISE FIGURE (dB) 15 10 5 0 -5 -15 12 FREQUENCY (GHz) FREQUENCY (GHz) Pout (dBm), Gain (dB), PAE (%) 8 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - CHIP 20 20 Output Power Gain PAE 10 8 6 4 2 0 -10 -5 0 Pin (dBm) 5 10 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC606 v04.0118 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz 25 18 23 16 21 14 19 Psat (dBm) P1dB (dBm) Psat vs. Temperature 20 12 10 8 17 15 13 +25C +85C -55C 6 4 11 +25C +85C -55C 9 2 7 0 2 4 6 8 10 12 14 16 5 18 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 FREQUENCY (GHz) Additive Phase Noise vs. Offset Frequency, RF Frequency = 12 GHz, At Small Signal Output IP3 vs. Temperature -80 ADDITIVE PHASE NOISE (dBc/Hz) 35 30 -90 -100 -110 25 IP3 (dBm) LOW NOISE AMPLIFIERS - CHIP P1dB vs. Temperature -120 20 -130 -140 +25C +85C -55C 15 -150 -160 10 -170 5 -180 2 4 6 8 10 12 14 16 18 10 100 FREQUENCY (GHz) 10K 100K 1M Additive Phase Noise Vs Offset Frequency, RF Frequency = 12 GHz, RF Input Power = 9 dBm (Psat) -80 -70 -90 -80 ADDITIVE PHASE NOISE (dBc/Hz) ADDITIVE PHASE NOISE (dBc/Hz) Additive Phase Noise Vs Offset Frequency, RF Frequency = 12 GHz, RF Input Power = 3 dBm (P1dB) -100 -90 -100 -110 -110 -120 -120 -130 -130 -140 -140 -150 -150 -160 -160 -170 -170 -180 -180 10 100 1K 10K OFFSET FREQUENCY (Hz) 3 1K OFFSET FREQUENCY (Hz) 100K 1M 10 100 1K 10K 100K 1M OFFSET FREQUENCY (Hz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC606 v04.0118 Additive Phase Noise Vs Offset Frequency, RF Frequency = 8 GHz, RF Input Power = 12 dBm (Psat) ADDITIVE PHASE NOISE (dBc/Hz) -80 -90 -100 -110 -120 -130 -140 -150 -160 -170 -180 100 1K 10K 100K 1M OFFSET FREQUENCY (Hz) Notes: For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D LOW NOISE AMPLIFIERS - CHIP GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz 4 HMC606 v04.0118 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Supply Current vs. Vcc1, Vcc2 Absolute Maximum Ratings LOW NOISE AMPLIFIERS - CHIP Vdd1= Vdd2= 5V 7V RF Input Power (RFIN) +15 dBm Channel Temperature 175 C Continuous Pdiss (T = 85 C) (derate 14.6 mW/C above 85 C) 1.32 W Thermal Resistance (channel to die bottom) 68.37 C/W Storage Temperature -65 to +150 C Operating Temperature -55 to +85 C Icc1 + Icc2 (mA) +4.5 53 +5.0 64 +5.5 74 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 5 Vcc1= Vcc2 (V) NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC606 v04.0118 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Pad Descriptions Function Description 1 RFIN This Pad is AC coupled and matched to 50 Ohms. 2, 4 Vcc1, Vcc2 Vcc1= Vcc2= 5V 3 RFOUT This Pad is AC coupled and matched to 50 Ohms. Interface Schematic Assembly Diagram For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D LOW NOISE AMPLIFIERS - CHIP Pad Number 6 HMC606 v04.0118 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D