Document Number: 91288 www.vishay.com
S11-1054-Rev. B, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 6.4 mH, RG = 25 , IAS = 11 A (see fig. 12).
c. ISD 11 A, dI/dt 185 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 500
RDS(on) ()V
GS = 10 V 0.55
Qg (Max.) (nC) 51
Qgs (nC) 12
Qgd (nC) 23
Configuration Single
N-Channel MOSFET
G
D
S
I2PAK
(TO-262)
S
D
G
ORDERING INFORMATION
Package I2PAK (TO-262)
Lead (Pb)-free IRFSL11N50APbF
SiHFSL11N50A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 °C ID
11
ATC = 100 °C 7.0
Pulsed Drain CurrentaIDM 44
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche EnergybEAS 390 mJ
Repetitive Avalanche CurrentaIAR 11 A
Repetitive Avalanche EnergyaEAR 19 mJ
Maximum Power Dissipation TC = 25 °C PD190 W
Peak Diode Recovery dV/dtcdV/dt 4.1 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91288
2S11-1054-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -40
°C/W
Maximum Junction-to-Case (Drain) RthJC -0.75
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.57 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 25 μA
VDS = 400 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 6.6 Ab- - 0.55
Forward Transconductance gfs VDS = 50 V, ID = 6.6 Ab6.0 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
- 1426 -
pF
Output Capacitance Coss - 208 -
Reverse Transfer Capacitance Crss -9.6-
Output Capacitance Coss VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz - 1954 -
VDS = 400 V, f = 1.0 MHz - 53 -
Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc- 110 -
Total Gate Charge Qg
VGS = 10 V ID = 11 A, VDS = 400 V
see fig. 6 and 13b
--51
nC
Gate-Source Charge Qgs --12
Gate-Drain Charge Qgd --
23
Turn-On Delay Time td(on)
VDD = 250 V, ID = 11 A
RG = 9.1 , RD = 22 , see fig. 10b
-14-
ns
Rise Time tr -34-
Turn-Off Delay Time td(off) -32-
Fall Time tf -27-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--11
A
Pulsed Diode Forward CurrentaISM --44
Body Diode Voltage VSD TJ = 25 °C, IS = 11 A, VGS = 0 Vb--1.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb- 530 790 ns
Body Diode Reverse Recovery Charge Qrr -3.45.1μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
Document Number: 91288 www.vishay.com
S11-1054-Rev. B, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com Document Number: 91288
4S11-1054-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91288 www.vishay.com
S11-1054-Rev. B, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
A
R
G
I
AS
0.01
Ω
t
p
D.U.T.
L
VDS
+
-V
DD
Driver
A
15 V
20 V
IAS
VDS
tp
www.vishay.com Document Number: 91288
6S11-1054-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Fig. 13b - Gate Charge Test Circuit
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 91288 www.vishay.com
S11-1054-Rev. B, 30-May-11 7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Fig. 11 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91288.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
5
4
13
L1
L2
D
BB
E
H
B
A
Detail A
A
A
c
c2
A
2 x e
2 x b2
2 x b
0.010 A B
MM ± 0.004 B
M
Base
metal
Plating b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
Scale: none
Lead tip
4
34
(Datum A)
2CC
BB
5
5
View A - A
E1
D1
E
4
4
B
H
Seating plane
Gauge
plane
0° to 8°
Detail “A”
Rotated 90° CW
scale 8:1
L3 A1
L4
L
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1
Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
A
E
B
A
A
A
c2
c
A1
Base
metal
Plating b1, b3
(b, b2)
c1
c
Section A - A
Section B - B and C - C
Scale: None
E1
E
Seating
plane
Lead tip
(Datum A)
L1
L2
BB
CC
L
D
2 x e
3 x b2
3 x b
0.010 A B
MM
D1
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380
A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -
b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420
b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -
b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC
b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065
c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146
c2 1.14 1.65 0.045 0.065
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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