LMH6703
LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown
Literature Number: SNOSAF2C
LMH6703
1.2 GHz, Low Distortion Op Amp with Shutdown
General Description
The LMH6703 is a very wideband, DC coupled monolithic
operational amplifier designed specifically for ultra high reso-
lution video systems as well as wide dynamic range systems
requiring exceptional signal fidelity. Benefiting from Nation-
al’s current feedback architecture, the LMH6703 offers a
practical gain range of ±1to±10 while providing stable
operation without external compensation, even at unity gain.
At a gain of +2 the LMH6703 supports ultra high resolution
video systems with a 750 MHz 2 V
PP
−3 dB Bandwidth. With
12-bit distortion levels through 10 MHz (R
L
= 100), and a
2.3nV/ input referred noise, the LMH6703 is the ideal
driver or buffer for high speed flash A/D and D/A converters.
Wide dynamic range systems such as radar and communi-
cation receivers requiring a wideband amplifier offering ex-
ceptional signal purity will find the LMH6703’s low input
referred noise and low harmonic distortion an attractive so-
lution.
Features
n−3 dB bandwidth (V
OUT
= 0.5 V
PP
,A
V
= +2) 1.2 GHz
n2
nd
/3
rd
harmonics (20 MHz, SOT23-6) −69/−90 dBc
nLow noise 2.3nV/
nFast slew rate 4500 V/µs
nSupply current 11 mA
nOutput current 90 mA
nLow differential gain and phase 0.01%/0.02˚
Applications
nRGB video driver
nHigh resolution projectors
nFlash A/D driver
nD/A transimpedance buffer
nWide dynamic range IF amp
nRadar/communication receivers
nDDS post-amps
nLine driver
Connection Diagrams
8-pin SOIC 6-pin SOT23
20110601
Top View
20110602
Top View
Ordering Information
Package Part Number Package Marking Transport Media NSC Drawing
8-Pin SOIC LMH6703MA LMH6703MA 95 Units/Rail M08A
LMH6703MAX 2.5k Units Tape and Reel
6-Pin SOT23 LMH6703MF AR1A 1k Units Tape and Reel MF06A
LMH6703MFX 3k Units Tape and Reel
LMHis a trademark of National Semiconductor Corporation.
May 2005
LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown
© 2005 National Semiconductor Corporation DS201106 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 5)
Human Body Model 2000V
Machine Model 200V
V
S
±6.75V
I
OUT
(Note 3)
Common Mode Input Voltage V
to V
+
Maximum Junction Temperature +150˚C
Storage Temperature Range −65˚C to +150˚C
Soldering Information
Infrared or Convection (20 sec.) 235˚C
Wave Soldering (10 sec.) 260˚C
Operating Ratings (Note 1)
Operating Temperature Range −40˚C to +85˚C
Supply Voltage Range ±4V to ±6V
Package Thermal Resistance (θ
JA
) (Note 4)
6-Pin SOT23 208˚C/W
8-Pin SOIC 160˚C/W
Electrical Characteristics (Note 2)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C, A
V
= +2, V
S
=±5V, R
L
= 100,R
F
= 560,
SD = Floating. Boldface limits apply at the temperature extremes.
Symbol Parameter Conditions Min
(Note 8)
Typ
(Note 7)
Max
(Note 8)
Units
Frequency Domain Performance
SSBW -3 dB Bandwidth V
OUT
= 0.5 V
PP
,A
V
= +1 1800
MHz
V
OUT
= 0.5 V
PP
,A
V
= +2 1200
LSBW V
OUT
=2V
PP
750
V
OUT
=4V
PP
500
GF 0.1 dB Gain Flatness V
OUT
= 0.5 V
PP
150 MHz
V
OUT
=2V
PP
150
DG Differential Gain R
L
= 150, 4.43 MHz 0.01 %
DP Differential Phase R
L
= 150, 4.43 MHz 0.02 deg
Time Domain Response
t
r
Rise Time 2V Step, 10% to 90% 0.5 ns
6V Step, 10% to 90% 1.05 ns
t
f
Fall Time 2V Step, 10% to 90% 0.5 ns
6V Step, 10% to 90% 1.05 ns
SR Slew Rate 4V Step, 10% to 90% (Note 6) 4200 V/µs
6V Step, 10% to 90% (Note 6) 4500 V/µs
t
s
Settling Time 2V Step, V
OUT
within 0.1% 10 ns
Distortion And Noise Response
HD2 2
nd
Harmonic Distortion 2 V
PP
, 5 MHz, SOT23-6 −87
dBc2V
PP
, 20 MHz, SOT23-6 −69
2V
PP
, 50 MHz, SOT23-6 −60
HD3 3
rd
Harmonic Distortion 2 V
PP
, 5 MHz, SOT23-6 −100
dBc2V
PP
, 20 MHz, SOT23-6 −90
2V
PP
, 50 MHz, SOT23-6 −70
IMD 3
rd
Order Intermodulation
Products
50 MHz, P
O
= 5 dBm/ tone −80 dBc
e
n
Input Referred Voltage Noise >1 MHz 2.3 nV/
i
n
Input Referred Noise Current Inverting Pin
>1 MHz
18.5 pA/
Input Referred Noise Current Non-Inverting Pin
>1 MHz
3 pA/
Static, DC Performance
V
OS
Input Offset Voltage ±1.5 ±7
±9mV
LMH6703
www.national.com 2
Electrical Characteristics (Note 2) (Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C, A
V
= +2, V
S
=±5V, R
L
= 100,R
F
= 560,
SD = Floating. Boldface limits apply at the temperature extremes.
Symbol Parameter Conditions Min
(Note 8)
Typ
(Note 7)
Max
(Note 8)
Units
TCV
OS
Input Offset Voltage Average Drift (Note 10) 22 µV/˚C
I
B
Input Bias Current Non-Inverting (Note 9) −7 ±20
±23 µA
Inverting (Note 9) −2 ±35
±44
TCI
B
Input Bias Current Average Drift Non-Inverting (Note 10) +30 nA/˚C
Inverting (Note 10) −70
V
O
Output Voltage Range R
L
=±3.3 ±3.45
V
R
L
= 100±3.2
±3.14
±3.4
PSRR Power Supply Rejection Ratio V
S
=±4.0V to ±6.0V 48
46
52 dB
CMRR Common Mode Rejection Ratio V
CM
= −1.0V to +1.0V 45
44
47 dB
I
S
Supply Current (Enabled) SD = 2V, R
L
=11 12.5
15.0 mA
Supply Current (Disabled) SD = 0.8V, R
L
=0.2 0.900
0.935 mA
Miscellaneous Performance
R
IN+
Non-Inverting Input Resistance 1 M
R
IN−
Inverting Input Resistance Output Impedance of Input
Buffer
30
C
IN
Non-Inverting Input Capacitance 0.8 pF
R
O
Output Resistance Closed Loop 0.05
CMVR Input Common Mode Voltage
Range
CMRR 40 dB ±1.9 V
I
O
Linear Output Current V
IN
= 0V, V
OUT
±80 mV ±55 ±90 mA
Enable/Disable Performance (Disabled Low)
T
ON
Enable Time 10 ns
T
OFF
Disable Time 10 ns
Output Glitch 50 mV
PP
V
IH
Enable Voltage SD V
IH
2.0 V
V
IL
Disable Voltage SD V
IL
0.8 V
I
IH
Disable Pin Bias Current, High SD = V
+
(Note 9) −7 ±70 µA
I
IL
Disable Pin Bias Current, Low SD = 0V (Note 9) −50 −240 −400 µA
I
OZ
Disabled Output Leakage Current V
OUT
=±1.8V 0.07 ±25
±40 µA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.
Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ=T
A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ>TA.
Note 3: The maximum output current (IOUT) is determined by device power dissipation limitations.
Note 4: The maximum power dissipation is a function of TJ(MAX),θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD=
(TJ(MAX) —T
A)/ θJA. All numbers apply for package soldered directly into a 2 layer PC board with zero air flow.
Note 5: Human body model: 1.5 kin series with 100 pF. Machine model: 0in series with 200 pF.
Note 6: Slew Rate is the average of the rising and falling edges.
Note 7: Typical numbers are the most likely parametric norm.
Note 8: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control
(SQC) methods.
Note 9: Negative input current implies current flowing out of the device.
Note 10: Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
LMH6703
www.national.com3
Typical Performance Characteristics (A
V
= +2, R
L
= 100,V
S
=±5V, R
F
= 560,T
A
= +25˚C,
SOT23-6; unless otherwise specified).
Small Signal Non-Inverting Frequency Response
(SOT23)
Large Signal Frequency Response
(SOT23)
20110618 20110620
Large Signal Frequency Response
(SOT23)
Small Signal Inverting Frequency Response
(SOT23)
20110621 20110619
Small Signal Non-Inverting Frequency Response
(SOIC)
Large Signal Frequency Response
(SOIC)
20110615 20110616
LMH6703
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Typical Performance Characteristics (A
V
= +2, R
L
= 100,V
S
=±5V, R
F
= 560,T
A
= +25˚C,
SOT23-6; unless otherwise specified). (Continued)
Large Signal Frequency Response
(SOIC) Small Signal Pulse Response
20110617
20110622
Large Signal Pulse Response Harmonic Distortion vs. Frequency
20110623
20110624
Harmonic Distortion vs. Output Voltage Harmonic Distortion vs. Load
20110627 20110625
LMH6703
www.national.com5
Typical Performance Characteristics (A
V
= +2, R
L
= 100,V
S
=±5V, R
F
= 560,T
A
= +25˚C,
SOT23-6; unless otherwise specified). (Continued)
2-Tone 3
rd
Order Intermodulation Differential Gain
20110626 20110613
Differential Phase Noise
20110614 20110632
CMRR vs. Frequency PSRR vs. Frequency
20110628 20110629
LMH6703
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Typical Performance Characteristics (A
V
= +2, R
L
= 100,V
S
=±5V, R
F
= 560,T
A
= +25˚C,
SOT23-6; unless otherwise specified). (Continued)
Disable Timing Disable Output Glitch
20110630 20110631
R
ISO
vs. C
LOAD
(See Applications Section) Non-Inverting Input Bias vs. Temperature
20110638 20110608
Inverting Input Bias vs. Temperature Input Offset vs. Temperature
20110609 20110610
LMH6703
www.national.com7
Typical Performance Characteristics (A
V
= +2, R
L
= 100,V
S
=±5V, R
F
= 560,T
A
= +25˚C,
SOT23-6; unless otherwise specified). (Continued)
Supply Current vs. Temperature Voltage Swing vs. Temperature
20110611 20110612
LMH6703
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Application Section
GENERAL DESCRIPTION
The LMH6703 is a high speed current feedback amplifier,
optimized for excellent bandwidth, gain flatness, and low
distortion. The loop gain for a current feedback op amp, and
hence the frequency response, is predominantly set by the
feedback resistor value. The LMH6703 in the SOT23-6 pack-
age is optimized for use with a 560feedback resistor. The
LMH6703 in the SOIC package is optimized for use with a
390feedback resistor. Using lower values can lead to
excessive ringing in the pulse response while a higher value
will limit the bandwidth. Application Note OA-13 discusses
this in detail along with the occasions where a different R
F
might be advantageous.
EVALUATION BOARDS
Device Package Evaluation Board
Part Number
LMH6703MF SOT23-6 CLC730216
LMH6703MA SOIC CLC730227
An Evaluation Board is shipped upon request when a
sample order is placed with National Semiconductor.
FEEDBACK RESISTOR SELECTION
One of the key benefits of a current feedback operational
amplifier is the ability to maintain optimum frequency re-
sponse independent of gain by using appropriate values for
the feedback resistor (R
F
). The Electrical Characteristics and
Typical Performance plots specify an R
F
of 560(390for
the SOIC package), a gain of +2 V/V and ±5V power sup-
plies (unless otherwise specified). Generally, lowering R
F
from it’s recommended value will peak the frequency re-
sponse and extend the bandwidth while increasing the value
of R
F
will cause the frequency response to roll off faster.
Reducing the value of R
F
too far below it’s recommended
value will cause overshoot, ringing and, eventually, oscilla-
tion.
Since a current feedback amplifier is dependant on the value
of R
F
to provide frequency compensation and since the
value of R
F
can be used to optimize the frequency response,
different packages use different R
F
values. As shown in
Figure 3, Recommended R
F
vs. Gain, the SOT23-6 and the
SOIC package use different values for the feedback resistor,
R
F
. Since each application is slightly different, it is worth
some experimentation to find the optimal R
F
for a given
circuit. In general, a value of R
F
that produces 0.1 dB of
peaking is the best compromise between stability and maxi-
mum bandwidth. Note that it is not possible to use a current
feedback amplifier with the output shorted directly to the
inverting input. The buffer configuration of the LMH6703
requires a 560(390for SOIC package) feedback resistor
for stable operation.
The LMH6703 was optimized for high speed operation. As
shown in Figure 3, the suggested value for R
F
decreases for
higher gains. Due to the output impedance of the input
buffer, there is a practical limit for how small R
F
can go,
based on the lowest practical value of R
G
. This limitation
applies to both inverting and non inverting configurations.
For the LMH6703 the input resistance of the inverting input is
approximately 30and 20is a practical (but not hard and
fast) lower limit for R
G
. The LMH6703 begins to operate in a
gain bandwidth limited fashion in the region when R
G
is
nearly equal to the input buffer impedance. Note that the
20110603
FIGURE 1. Recommended Non-Inverting Gain Circuit
(SOIC Pinout Shown)
20110604
FIGURE 2. Recommended Inverting Gain Circuit
(SOIC Pinout Shown)
20110639
FIGURE 3. Recommended R
F
vs. Gain
LMH6703
www.national.com9
Application Section (Continued)
amplifier will operate with R
G
values well below 20, how-
ever results may be substantially different than predicted
from ideal models. In particular the voltage potential be-
tween the Inverting and Non-Inverting inputs cannot be ex-
pected to remain small.
Inverting gain applications that require impedance matched
inputs may limit gain flexibility somewhat (especially if maxi-
mum bandwidth is required). The impedance seen by the
source is R
G
|| R
T
(R
T
is optional). The value of R
G
is R
F
/Gain. Thus for a SOT23 in a gain of 5V/V, an R
F
of 460
is optimum and R
G
is 92. Without a termination resistor,
R
T
, the input impedance would equal R
G
,92. Using an R
T
of 109will set the input resistance to match a 50source.
Note that source impedances greater then R
G
cannot be
matched in the inverting configuration.
For more information see Application Note OA-13 which
describes the relationship between R
F
and closed-loop fre-
quency response for current feedback operational amplifiers.
The value for the inverting input impedance for the LMH6703
is approximately 30. The LMH6703 is designed for opti-
mum performance at gains of +1 to +10 V/V and −1 to −9
V/V. Higher gain configurations are still useful, however, the
bandwidth will fall as gain is increased, much like a typical
voltage feedback amplifier.
The LMH6703 data sheet shows both SOT23-6 and SOIC
data in the Electrical Characteristic section to aid in selecting
the right package. The Typical Performance Characteristics
section shows SOT23-6 package plots only.
CAPACITIVE LOAD DRIVE
Capacitive output loading applications will benefit from the
use of a series output resistor R
ISO
.Figure 4 shows the use
of a series output resistor, R
ISO
, to stabilize the amplifier
output under capacitive loading. Capacitive loads from 5 to
120 pF are the most critical, causing ringing, frequency
response peaking and possible oscillation. The chart “Sug-
gested R
ISO
vs. Cap Load” gives a recommended value for
selecting a series output resistor for mitigating capacitive
loads. The values suggested in the charts are selected for
0.5 dB or less of peaking in the frequency response. This
produces a good compromise between settling time and
bandwidth. For applications where maximum frequency re-
sponse is needed and some peaking is tolerable, the value
of R
ISO
can be reduced slightly from the recommended
values.
DC ACCURACY AND NOISE
Example below shows the output offset computation equa-
tion for the non-inverting configuration (see Figure 1) using
the typical bias current and offset specifications for A
V
=+2:
Output Offset : V
O
=(I
BN
·R
IN
±V
OS
)(1+R
F
/R
G
)±I
BI
·R
F
Where R
IN
is the equivalent input impedance on the non-
inverting input.
Example computation for A
V
= +2, R
F
= 560,R
IN
=25:
V
O
=(A·25±1.5 mV) (1 + 560/560) ±2µA · 560
−3.7 mV to 4.5 mV
A good design, however, should include a worst case calcu-
lation using Min/Max numbers in the data sheet tables, in
order to ensure "worst case" operation.
Further improvement in the output offset voltage and drift is
possible using the composite amplifiers described in Appli-
cation Note OA-7. The two input bias currents are physically
unrelated in both magnitude and polarity for the current
feedback topology. It is not possible, therefore, to cancel
their effects by matching the source impedance for the two
inputs (as is commonly done for matched input bias current
devices).
The total output noise is computed in a similar fashion to the
output offset voltage. Using the input noise voltage and the
two input noise currents, the output noise is developed
through the same gain equations for each term but com-
bined as the square root of the sum of squared contributing
elements. See Application Note OA-12 for a full discussion of
noise calculations for current feedback amplifiers.
PRINTED CIRCUIT LAYOUT
Whenever questions about layout arise, use the evaluation
board as a guide. The CLC730216 is the evaluation board
supplied with SOT23-6 samples of the LMH6703 and the
CLC730227 is the evaluation board supplied with SOIC
samples of the LMH6703.
To reduce parasitic capacitances, ground and power planes
should be removed near the input and output pins. Compo-
nents in the feedback path should be placed as close to the
device as possible to minimize parasitic capacitance. For
long signal paths controlled impedance lines should be
used, along with impedance matching elements at both
ends.
Bypass capacitors should be placed as close to the device
as possible. Bypass capacitors from each voltage rail to
ground are applied in pairs. The larger electrolytic bypass
capacitors can be located further from the device, the
smaller ceramic bypass capacitors should be placed as
close to the device as possible. In Figure 1 and Figure 2 C
SS
is optional, but is recommended for best second order har-
monic distortion.
20110635
FIGURE 4. Decoupling Capacitive Loads
LMH6703
www.national.com 10
Application Section (Continued)
VIDEO PERFORMANCE
The LMH6703 has been designed to provide excellent per-
formance with production quality video signals in a wide
variety of formats such as HDTV and High Resolution VGA.
NTSC and PAL performance is nearly flawless with DG of
0.01% and DP of 0.02˚. Best performance will be obtained
with back terminated loads. The back termination reduces
reflections from the transmission line and effectively masks
transmission line and other parasitic capacitance from the
amplifier output stage. Figure 5 shows a typical configuration
for driving 75cable. The amplifier is configured for a gain of
two compensating for the 6 dB loss due to R
OUT
.
ENABLE/DISABLE
For ±5V supplies only the LMH6703 has a TTL logic com-
patible disable function. Apply a logic low (<.8V) to the SD
pin and the LMH6703 is disabled. Apply a logic high (>2.0V),
or let the pin float and the LMH6703 is enabled. Voltage, not
current, at the Shutdown pin (SD) determines the enable/
disable state. Care must be exercised to prevent the shut-
down pin voltage from going more than 0.8V below the
midpoint of the supply voltages (0V with split supplies, V
+
/2
with single supply biasing). Doing so could cause transistor
Q1 to Zener resulting in damage to the disable circuit (See
Figure 6). The core amplifier is unaffected by this, but the
shutdown operation could become permanently slower as a
result.
Disabled, the LMH6703 inputs and output become high im-
pedances. While disabled the LMH6703 quiescent current is
approximately 200 µA. Because of the pull up resistor on the
shutdown circuit, the I
CC
and I
EE
currents (positive and
negative supply currents respectively) are not balanced in
the disabled state. The positive supply current (I
CC
)isap-
proximately 300 µA while the negative supply current (I
EE
)is
only 200 µA. The remaining I
EE
current of 100 µA flows
through the shutdown pin.
The disable function can be used to create analog switches
or multiplexers. Implement a single analog switch with one
LMH6703 positioned between an input and output. Create
an analog multiplexer with several LMH6703’s and tie the
outputs together.
20110633
FIGURE 5. Typical Video Application
20110637
FIGURE 6. SD Pin Simplified Schematic
(SOT23 Pinout Shown)
LMH6703
www.national.com11
Physical Dimensions inches (millimeters)
unless otherwise noted
8-Pin SOIC
NS Package Number M08A
6-Pin SOT23
NS Package Number M06A
LMH6703
www.national.com 12
Notes
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown
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