G
D
S
NTE461
Silicon N−Channel JFET Transistor
Dual, Matched Pair
DC Amp/Sampler/Chopper
TO71 Type Package
Features:
DHigh Input Impedance: IG 5 50pA
DMinimum System Error and Calibrations
DTO−71 Case Style
Absolute Maximum Ratings:
Gate Drain or Gate Source Voltage −50V..................................................
Gate Current 30mA....................................................................
Device Dissipation (TA = +255C, Each Side) 250mW.......................................
Derate Above 255C 1.67mW/5C....................................................
Total Device Dissipation (TA = +255C) 400mW.............................................
Derate Above 255C 2.67mW/5C....................................................
Storage Temperature Range −655 to +2005C..............................................
Lead Temperature (During Soldering, 1/16” from case for 30sec) +3005C......................
Electrical Characteristics: (TA = +255C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = −1 A, VDS = 0 −50 − − V
Gate Reverse Current IGSS VGS = −30V, VDS = 0 − − −100 pA
Gate−Source Cutoff Voltage VGS(off) VDG = 15V, ID = 0.5nA −0.5 − −4.5 V
Saturation Drain Current IDSS VDS = 15V, VGS = 0 0.5 −8.0 mA
Gate Operating Current IGVDG = 15V, ID = 200 A − − −50 pA
Dynamic Characteristics
Forward Transcondutance gfs g = 1kHz 1500 −6000 mhos
Input Capacitance Ciss VDS = 15V, VGS = 0 − − 6pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0 − − 2pF
Rev. 10−13
Electrical Characteristics (Cont’d): (TA = +255C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Matching Characteristics
Differential Gate Current IG1−IG2 VDG = 15V, ID = 200 A, TA = +255C− − 5nA
Saturation Drain Current Ratio IDSS1/IDSS2 VDS = 15V, VGS = 0, Note 1 0.95 −1.0
Differential Gate−Source Voltage VGS1−VGS2 VGD = 15V ID = 50 A − − 15 mV
ID = 200 A − − 15 mV
Gate−Source Voltage
Differential Drift
VDG = 15V,
ID = 200 A,
Note 2
TA = +255C/TB = +1255C− − 40 V/5C
TA = −555C/TB = +255C− − 40 V/5C
Transconductance Ratio gfs1/gfs2 0.95 −1.0
Differential Output Conductance gos1−gos2 − − 3mhos
Note 1. Assumes smaller value in numerator.
Note 2. Measured at end points, TA and TB.
Pin4 and Pin8 are Omitted
All Leads are Isolated from Case
Pin 1 S1
Pin 2 D1
Pin 3 G1
Pin 5 S2
Pin 6 D2
Pin 7 G2
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.018 (0.45) Dia
.190
(4.82)
.500
(12.7)
Min
.100 (2.54) Dia
.050 (1.27)
.038 (0.96)
.041 (1.04)
455
1
23
5
6
7
